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Peak Output Power 15W
Application General-Purpose Broadband, 28 V
Typical Power (PSAT) 15 W
Operating Voltage 28 V
Breakdown Voltage High
Frequency DC - 8.0 GHz
Package Type Die
Small Signal Gain 17 dB @ 4.0 GHz 12 dB @ 8.0 GHz
Efficiency 70%
Technology GaN on SiC

WARNING: Cancer and Reproductive Harm -

15-W, 8.0-GHz, GaN HEMT Die

SKU: CG2H80015D

Wolfspeed’s CG2H80015D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.



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