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Peak Output Power 120W
Application General-Purpose Broadband, 28 V
Operating Voltage 28 V
Frequency 1.8 - 2.3 GHz
Package Type Flange
Efficiency 35 % @ 20 W PAVE
Gain 15 dB
ACLR -35 dBc @ 20 W PAVE
Technology GaN on SiC

120-W, 1800 – 2300-MHz, GaN HEMT

SKU: CGH21120F

Wolfspeed’s CGH21120F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH21120F ideal for 1.8 – 2.3-GHz WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package.


  • High Degree of DPD Correction Can be Applied



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