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Wolfspeed's GaN HEMT devices are ideal for ultra-broadband amplifier applications that require high reliability and efficiency. The intrinsic properties of high-power density, low parasitic, and high FT, allow for multi-octave to instantaneous bandwidth amplifiers. This family of products consists of packaged, unmatched discrete transistors from output powers 6 W to 240 W (CW) at 28 V and packaged 50-ohm MMIC amplifiers operating at 28 V suitable from DC–18 GHz applications. This portfolio also includes bare discrete die and bare MMIC die designed for hybrid amplifiers and multi-function transmit/receive modules.

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Discrete Bare Die

MMIC Bare Die

Packaged Discrete Transistors

Product Peak Output Power (W) Frequency (Min) (GHz) Frequency (Max) (GHz) Operating Voltage (V) Data Sheet
CGH40006P 6W 0 GHz 6 GHz 28 V
CGH40006S 6W 0 GHz 6 GHz 28 V
CGH40010 10W 0 GHz 6 GHz 28 V
CG2H40025 25W 0 GHz 6 GHz 28 V
CGH40035 35W 0 GHz 6 GHz 28 V
CGH40045 45W 0 GHz 4 GHz 28 V
CGH40090PP 90W 0 GHz 4 GHz 28 V
CGH40120F 120W 0 GHz 3 GHz 28 V
CGH40120P 120W 0 GHz 3 GHz 28 V
CGH40180PP 180W 0 GHz 3 GHz 28 V
CGH09120F 120W 0 GHz 2.5 GHz 28 V
CGH27015 15W 0 GHz 6 GHz 28 V
CGH27030 30W 0 GHz 6 GHz 28 V
CGH27030S 30W 0 GHz 6 GHz 28 V
CGH27060 60W 0 GHz 4 GHz 28 V
CGH55030F1/P1 30W 0 GHz 6 GHz 28 V
CG2H40010 10W 0 GHz 6 GHz 28 V
CG2H40045 45W 0 GHz 4 GHz 28 V
CGH40025 25W 0 GHz 6 GHz 28 V
CG2H30070 80W 0.5 GHz 3 GHz 28 V
CG2H40120 130W 0 GHz 2.5 GHz 28 V
CG2H40035 35W 0 GHz 6 GHz 28 V

Packaged MMICs