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Wolfspeed's GaN HEMT devices are ideal for ultra-broadband amplifier applications that require high reliability and efficiency. The intrinsic properties of high-power density, low parasitic, and high FT, allow for multi-octave to instantaneous bandwidth amplifiers. This family of products consists of packaged, unmatched discrete transistors from output powers 6 W to 240 W (CW) at 28 V and packaged 50-ohm MMIC amplifiers operating at 28 V suitable from DC–18 GHz applications. This portfolio also includes bare discrete die and bare MMIC die designed for hybrid amplifiers and multi-function transmit/receive modules.

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Discrete Bare Die

Product Peak Output Power (W) Frequency (Min) (GHz) Frequency (Max) (GHz) Operating Voltage (V) Data Sheet
CGH60030D 30W 0 GHz 6 GHz 28 V
CG2H80030D 30W 0 GHz 8 GHz 28 V
CG2H80045D 45W 0 GHz 8 GHz 28 V

MMIC Bare Die

Packaged Discrete Transistors

Packaged MMICs