General-Purpose Broadband, 50 V
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Wolfspeed's GaN HEMT devices are ideal for ultra-broadband amplifier applications and feature high breakdown voltage. The intrinsic properties of high-power density, low parasitic, and high FT, allow for multi-octave to instantaneous bandwidth amplifiers. This family of products consists of packaged, unmatched discrete transistors from output powers 15 W to 350 W (CW) at 50 V and packaged 50-ohm MMIC amplifiers operating at 50 V suitable from DC–6 GHz applications. This portfolio also includes bare discrete die and bare MMIC die designed for hybrid amplifiers and multi-function transmit/receive modules.