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Wolfspeed's GaN HEMT devices are ideal for ultra-broadband amplifier applications and feature high breakdown voltage. The intrinsic properties of high-power density, low parasitic, and high FT, allow for multi-octave to instantaneous bandwidth amplifiers. This family of products consists of packaged, unmatched discrete transistors from output powers 15 W to 350 W (CW) at 50 V and packaged 50-ohm MMIC amplifiers operating at 50 V suitable from DC–6 GHz applications. This portfolio also includes bare discrete die and bare MMIC die designed for hybrid amplifiers and multi-function transmit/receive modules.

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Discrete Bare Die

Packaged Discrete Transistors

Product Peak Output Power (W) Frequency (Min) (GHz) Frequency (Max) (GHz) Operating Voltage (V) Data Sheet
CGHV27060MP 60W 0 GHz 2.7 GHz 50 V
CGHV35060MP 60W 2.7 GHz 3.8 GHz 50 V
CGHV40030 30W 0 GHz 6 GHz 50 V
CGHV40050 50W 0 GHz 4 GHz 50 V
CGHV40100 100W 0 GHz 3 GHz 50 V
CGHV27015S 15W 0 GHz 6 GHz 50 V
CGHV27030S 30W 0 GHz 6 GHz 50 V
CGHV40200PP 250W 0 GHz 2 GHz 50 V
CGHV40180 200W 0 GHz 2 GHz 28 V / 50 V ·
PTVA042502EC/FC-V1 250W 0.47 GHz 0.806 GHz 50 V
PTVA043502EC/FC-V1 350W 0 GHz 1.35 GHz 50 V

MMIC Bare Die

Product Peak Output Power (W) Frequency (Min) (GHz) Frequency (Max) (GHz) Operating Voltage (V) Data Sheet
CMPA0060025D 25W 0 GHz 6 GHz 50 V

Packaged MMIC