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CGHV60075D5

Wolfspeed CGHV60075D 75-W 6.0-GHz GaN HEMT Die
Peak Output Power 75W
Application General-Purpose Broadband, 50 V
Typical Power Added Efficiency PAE 65 % @ 4GHz 60 % @ 6GHz
Typical Power (PSAT) 75 W
Operating Voltage 50 V
Breakdown Voltage High
Frequency 6.0 GHz
Package Type Die
Small Signal Gain 18 dB @ 4 GHz 17 dB @ 6 GHz
warning!

WARNING: Cancer and Reproductive Harm - www.p65warnings.ca.gov

75-W, 6.0-GHz, GaN HEMT Die

SKU: CGHV60075D5

Wolfspeed’s CGHV60075D5 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

 

Features

  • Up to 6-GHz operation

Documents

Data Sheets

Document Name Date Updated Download
CGHV60075D5
Version: 1.1
Sep 2, 2016

RF Application Notes

Document Name Date Updated Download
Load Pull Validation of Large Signal Cree GaN Field Effect Transistor (FET) Model
Version: A
Jan 21, 2016

RF Product Ecology

Document Name Date Updated Download
HEMT Chips RoHS Declaration
Version: RS4006102018
CG2H80015D, CG2H80030D, CG2H80060D, CG2H80120D, CGH60008D, CGH60015D, CGH60030D, CGH60060D, CGH60120D, CGH80030D, CGHV1J006D, CGHV1J025D, CGHV1J070D, CGHV27320T1AD, CGHV30500D3, CGHV40320D, CGHV40320D5, CGHV40320T1AD, CGHV60015T1D, CGHV60018D5, CGHV60030D5, CGHV60030T1D, CGHV60035D5, CGHV60040D, CGHV60060D5, CGHV60075D, CGHV60075D5, CGHV60080D5, CGHV60080T1AD, CGHV60100D, CGHV60120D5, CGHV60120T1AD, CGHV60120T1D, CGHV60125T1AD, CGHV60160D5, CGHV60160T1AD, CGHV60170D, CGHV60180D5, CGHV60240D5, CGHV60240T1AD, CGHV60240T1D, CGHV60250D5
Dec 26, 2018

RF Videos

Document Name Date Updated Download
Assembling a Packaged Wolfspeed GaN MMIC into a Test Fixture Nov 2, 2018
Webinar: Design of an 800W GaN Power Amplifier Stage for Pulsed L Band Applications Feb 17, 2017

S-parameters

Document Name Date Updated Download
CGHV60075D S-parameters, VDD = 50 V, Idq = 125 mA Aug 26, 2015

Sales Terms

Document Name Date Updated Download
Sales Terms and Conditions
Version: M
May 22, 2019

Technical Papers & Articles

Document Name Date Updated Download
6-Port GaN HEMT Models Help Designers Optimize PA Efficiency
Version: Design
by Raymond S. Pengelly, William Pribble, Thomas Smith

This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site, the PA consumes the bulk of the dc power, generates the most heat, and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs, which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Oct 12, 2018
Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies
Version: Design
by Donald A. Gajewski, Scott Sheppard, Simon Wood, Jeff B. Barner, Jim Milligan, and John Palmour.

This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Oct 12, 2018