Document Name | Date Updated | Download |
---|---|---|
CGHV60075D5
Version: 1.1
|
Sep 2, 2016 |
CGHV60075D5

Peak Output Power | 75W | |
---|---|---|
Application | General-Purpose Broadband, 50 V | |
Typical Power Added Efficiency PAE | 65 % @ 4GHz 60 % @ 6GHz | |
Typical Power (PSAT) | 75 W | |
Operating Voltage | 50 V | |
Breakdown Voltage | High | |
Frequency | 6.0 GHz | |
Package Type | Die | |
Small Signal Gain | 18 dB @ 4 GHz 17 dB @ 6 GHz |

WARNING: Cancer and Reproductive Harm - www.p65warnings.ca.gov
75-W, 6.0-GHz, GaN HEMT Die
SKU: CGHV60075D5
Wolfspeed’s CGHV60075D5 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
Features
- Up to 6-GHz operation