| Document Name | Date Updated | Download |
|---|---|---|
|
GTVA104001FA
Version: 3
|
Dec 21, 2018 |
GTVA104001FA-V1
| Peak Output Power | 400W (P3dB) | |
|---|---|---|
| Application | Avionics | |
| Power Gain | 19 dB | |
| Operating Voltage | 50 V | |
| Frequency | 0.96 - 1.215 GHz | |
| Package Type | Earless | |
| Efficiency | 70% | |
| Technology | GaN | |
High Power RF GaN on SiC HEMT 400 W, 50 V, 960 – 1215 MHz
SKU: GTVA104001FA-V1
The GTVA104001FA is a 400-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 960 to 1215 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced surface mount package with earless flange.
Features
- GaN on SiC HEMT technology
- Broadband internal input matching
- Typical Pulsed CW performance, 960 - 1215 MHz, 50V
- Output power = 410 W
- Drain Efficiency = 70 %
- Gain = 19 dB
- Pulse width = 128 μs
- Duty cycle = 10 %
- Pb-free and RoHS compliant