Document Name | Date Updated | Download |
---|---|---|
GTVA311801FA
Version: 2.0
|
May 24, 2018 |
GTVA311801FA-V1

Peak Output Power | 180W (P3dB) | |
---|---|---|
Application | L-Band / S-Band / X-Band / C-Band / Ku-Band | |
Power Gain | 15 dB | |
Operating Voltage | 50 V | |
Frequency | 2.7 - 3.1 GHz | |
Package Type | Earless | |
Efficiency | 70% | |
Technology | GaN |
High Power RF GaN on SiC HEMT 180 W, 50 V, 2700 – 3100 MHz
SKU: GTVA311801FA-V1
The GTVA311801FA is a 180-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2700 to 3100 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Features
- GaN on SiC HEMT technology
- Broadband internal input matching
- Typical pulsed CW performance (class AB), 2700 – 3100 MHz, 50 V, 300 μs pulse width, 10% duty cycle
- Output power at P3dB = 180 W
- Drain efficiency = 70%
- Gain (P3dB) = 15 dB
- Pb-free and RoHS compliant