| Document Name | Date Updated | Download |
|---|---|---|
|
GTVA311801FA
Version: 2.0
|
May 24, 2018 |
GTVA311801FA-V1
| Peak Output Power | 180W (P3dB) | |
|---|---|---|
| Application | L-Band / S-Band / X-Band / C-Band / Ku-Band | |
| Power Gain | 15 dB | |
| Operating Voltage | 50 V | |
| Frequency | 2.7 - 3.1 GHz | |
| Package Type | Earless | |
| Efficiency | 70% | |
| Technology | GaN | |
High Power RF GaN on SiC HEMT 180 W, 50 V, 2700 – 3100 MHz
SKU: GTVA311801FA-V1
The GTVA311801FA is a 180-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2700 to 3100 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Features
- GaN on SiC HEMT technology
- Broadband internal input matching
- Typical pulsed CW performance (class AB), 2700 – 3100 MHz, 50 V, 300 μs pulse width, 10% duty cycle
- Output power at P3dB = 180 W
- Drain efficiency = 70%
- Gain (P3dB) = 15 dB
- Pb-free and RoHS compliant