| Document Name | Date Updated | Download |
|---|---|---|
|
GTVA355001EC-FC
Version: 1.0
|
May 24, 2018 |
GTVA355001EC-FC-V1
| Peak Output Power | 500W (P3dB) | |
|---|---|---|
| Application | L-Band / S-Band / X-Band / C-Band / Ku-Band | |
| Power Gain | 13 dB | |
| Operating Voltage | 50 V | |
| Frequency | 2.9 - 3.5 GHz | |
| Package Type | Bolt Down / Earless | |
| Efficiency | 65% | |
| Technology | GaN | |
High Power RF GaN on SiC HEMTs
500 W, 50 V, 2900 – 3500 MHz
SKU: GTVA355001EC-FC-V1
The GTVA355001EC and GTVA35501FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequecy band. They feature input and output matching, high efficiency, and thermally-enhanced packages.
Features
- GaN on SiC HEMT technology
- Broadband internal input and output matching
- Typical pulsed CW performance, single side, 3500 MHz, 50 V, 300 μs pulse width, 10% duty cycle
- Output power at P3dB = 500 W
- Drain efficiency = 65%
- Gain = 13 dB
- Pb-free and RoHS compliant