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Peak Output Power 500W (P3dB)
Application L-Band / S-Band / X-Band / C-Band / Ku-Band
Power Gain 13 dB
Operating Voltage 50 V
Frequency 2.9 - 3.5 GHz
Package Type Bolt Down / Earless
Efficiency 65%
Technology GaN

High Power RF GaN on SiC HEMTs
500 W, 50 V, 2900 – 3500 MHz

SKU: GTVA355001EC-FC-V1


The GTVA355001EC and GTVA35501FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequecy band. They feature input and output matching, high efficiency, and thermally-enhanced packages.

Features

  • GaN on SiC HEMT technology
  • Broadband internal input and output matching
  • Typical pulsed CW performance, single side, 3500 MHz, 50 V, 300 μs pulse width, 10% duty cycle
    • Output power at P3dB = 500 W
    • Drain efficiency = 65%
    • Gain = 13 dB
  • Pb-free and RoHS compliant

Documents