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Peak Output Power 40W at PIN = 23 dBm
Typical Power Added Efficiency PAE 35 %
Power Gain 23 dB at PIN = 23 dBm
Operating Voltage 28 V
Frequency 9.0 - 10.0 GHz
Package Type Flange
Small Signal Gain 34 dB
Technology GaN on SiC

35-W, 9.0 – 10.0-MHz, 28 V, GaN MMIC for Radar Power Amplifiers

SKU: CMPA901A035F


Cree’s CMPA901A035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA901A035F ideal for 9 – 10.0 GHz Radar & CW amplifier applications. The transistor is supplied in a ceramic/metal flange package.

Features

  • 50-ohm matched
  • 40 W typical Pout
  • 34 dB Typical Small Signal Gain
  • 28 V Operation

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