CMPA1C1D060D

Peak Output Power		65W
Application		Satellite Communications
Typical Power Added Efficiency PAE		30 %
Typical Power (PSAT)		60 W
Operating Voltage		40 V
Frequency		12.7 - 13.25 GHz
Package Type		Die
Small Signal Gain		26 dB

60-W, 12.7 to 13.25-GHz, 40-V, GaN MMIC Power Amplifier

SKU: CMPA1C1D060D

Wolfspeed’s CMPA1C1D060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate, using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated-electron-drift velocity and higher thermal conductivity.

Documents

Data Sheets

Document Name	Date Updated	Download
CMPA1C1D060D Version: 0.0	Mar 7, 2017

RF Application Notes

Document Name	Date Updated	Download
15 Years of GaN MMIC Technology Leadership	Oct 25, 2016
Eutectic Die Attach Procedure Version: A	Sep 3, 2015
GaN MMIC PAs Support the Rapid Growth of Ku Band Applications	Nov 7, 2016

RF Product Ecology

Document Name	Date Updated	Download
GaN MMIC Chips RoHS Declaration Version: RS4069092017 CMPA0060002D, CMPA0060025D, CMPA1C1D060D, CMPA1D1E030D, CMPA1D1E050D, CMPA2060025D, CMPA2560025D, CMPA2735075D, CMPA5585025D, CMPA5585030D, CMPA601C025D, CMPA801B025D, CMPA901A040D	Nov 12, 2018

RF Videos

Document Name	Date Updated	Download
Assembling a Packaged Wolfspeed GaN MMIC into a Test Fixture	Nov 2, 2018
Cree RF GaN-on-SiC foundry process & product capabilities overview	Feb 17, 2017
Cree's offers GaN RF components through 18 GHz based on our qualified 0.25-µm process	Feb 17, 2017
Industry’s First Ku-Band GaN MMIC for SatCom Power Amplifier	Nov 2, 2018

Sales Terms

Document Name	Date Updated	Download
Sales Terms and Conditions Version: M	Nov 12, 2018

Technical Papers & Articles

Document Name	Date Updated	Download
A Review of GaN on SiC HEMTs and MMICs Version: Design by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble	Sep 26, 2018
Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies Version: Design by Donald A. Gajewski, Scott Sheppard, Simon Wood, Jeff B. Barner, Jim Milligan, and John Palmour. This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.	Oct 12, 2018