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CMPA5585025F

Peak Output Power		25W
Application		Satellite Communications
Typical Power (PSAT)		35 W
Operating Voltage		28 V
Breakdown Voltage		High
Frequency		5.5 - 8.5 GHz
Package Type		Flange
Small Signal Gain		25 dB
Size		1.00 x 0.385 in

25-W, 5.5 – 8.5-GHz, GaN MMIC Power Amplifier

SKU: CMPA5585025F

Wolfspeed’s CMPA5585025F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.

Documents

Data Sheets

Document Name	Date Updated	Download
CMPA5585025F Version: 5.0	May 18, 2017

RF Application Notes

Document Name	Date Updated	Download
15 Years of GaN MMIC Technology Leadership	Apr 8, 2019

RF Product Ecology

Document Name	Date Updated	Download
440213 GaN MMIC REACh Declaration Version: RE4067022019 CMPA1D1E025F, CMPA5585025F, CMPA5585030F, CMPA601C025F, CMPA801B025F	Feb 28, 2019
440213 GaN MMIC RoHS Declaration Version: RS4067032018 CMPA1D1E025F, CMPA5585025F, CMPA5585030F, CMPA601C025F, CMPA801B025F	Dec 26, 2018

RF Videos

Document Name	Date Updated	Download
Assembling a Packaged Wolfspeed GaN MMIC into a Test Fixture	Nov 2, 2018
Webinar: Design of an 800W GaN Power Amplifier Stage for Pulsed L Band Applications	Feb 17, 2017

Sales Terms

Document Name	Date Updated	Download
Sales Terms and Conditions Version: M	Jun 26, 2019

Technical Papers & Articles

Document Name	Date Updated	Download
A Review of GaN on SiC HEMTs and MMICs Version: Design by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble	Apr 8, 2019
Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies Version: Design by Donald A. Gajewski, Scott Sheppard, Simon Wood, Jeff B. Barner, Jim Milligan, and John Palmour. This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.	Oct 12, 2018

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