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CMPA5585025F

Wolfspeed CMPA5585025F 25-W 5.5-8.5GHz GaN MMIC
Peak Output Power 25W
Application Satellite Communications
Typical Power (PSAT) 35 W
Operating Voltage 28 V
Frequency 5.5 - 8.5 GHz
Package Type Flange
Small Signal Gain 25 dB
Size 1.00 x 0.385 in

25-W, 5.5 – 8.5-GHz, GaN MMIC Power Amplifier

SKU: CMPA5585025F

Wolfspeed’s CMPA5585025F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.

Documents

Data Sheets

Document Name Date Updated Download
CMPA5585025F
Version: 5.0
May 18, 2017

Line Card

Document Name Date Updated Download
RF Line Card Oct 10, 2019

RF Application Notes

Document Name Date Updated Download
15 Years of GaN MMIC Technology Leadership Apr 8, 2019

RF Product Ecology

Document Name Date Updated Download
440213 GaN MMIC REACh Declaration
CMPA1D1E025F, CMPA5585025F, CMPA5585030F, CMPA601C025F, CMPA801B025F
Jul 25, 2019
440213 GaN MMIC RoHS Declaration
Version: RS4067052019
CMPA1D1E025F, CMPA5585025F, CMPA5585030F, CMPA601C025F, CMPA801B025F
Aug 9, 2019

RF Videos

Document Name Date Updated Download
Assembling a Packaged Wolfspeed GaN MMIC into a Test Fixture Nov 2, 2018
Webinar: Design of an 800W GaN Power Amplifier Stage for Pulsed L Band Applications Feb 17, 2017

Sales Terms

Document Name Date Updated Download
Sales Terms and Conditions
Version: M
Jul 19, 2019

Technical Papers & Articles

Document Name Date Updated Download
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
Version: Design
by Raymond S. Pengelly, Simon M. Wood, James W. Milligan, Scott T. Sheppard, and William L. Pribble
Apr 8, 2019
Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies
Version: Design
by Donald A. Gajewski, Scott Sheppard, Simon Wood, Jeff B. Barner, Jim Milligan, and John Palmour.

This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Oct 12, 2018
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