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Peak Output Power 370W (P3dB)
Application Telecom
Typical Power (Average) 56.2 W
Power Gain 13.8
Operating Voltage 48 V
Frequency 2.495 - 2.69 GHz
Package Type Earless
Efficiency 54%
Technology GaN on SiC

High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 – 2690 MHz

SKU: GTRA263902FC-V2


The GTRA263902FC is a 370-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.

Features

  • GaN on SiC HEMT technology
  • Input matched
  • Typical Pulsed CW performance, 2690 MHz, 48 V, combined outputs
    • Output power at P3dB = 370 W
    • Efficiency = 70%
    • Gain = 15 dB
  • Capable of handling 10:1 VSWR @48 V, 56 W (CW) output power
  • Low thermal resistance
  • Pb-free and RoHS compliant

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