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Peak Output Power 400W
Application Telecom
Typical Power (Average) 50 W
Power Gain 13 dB
Operating Voltage 48 V
Frequency 3.3 - 3.9 GHz
Package Type Earless
Efficiency 40%
Technology GaN on SiC

High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz

SKU: GTRA364002FC-V1

The GTRA364002FC is a 400-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.


  • GaN on SiC HEMT technology
  • Input Matched
  • Asymmetrical Doherty design
    • Main: P3dB = 170 W Typ
    • Peak: P3dB = 230 W Typ
  • Typical Pulsed CW performance, 3400 to 3600 MHz, 48 V, combined outputs, Doherty @ P3dB, 10 μs, 10% duty cycle
    • Output power = 400 W
    • Efficiency = 60 %
    • Gain = 14 dB
  • Capable of handling 10:1 VSWR @ 48 V, 50 W (WCDMA) output power
  • Low thermal resistance
  • Pb-free and RoHS compliant



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