| Document Name | Date Updated | Download |
|---|---|---|
|
GTVA212701FA-V2
Version: 4.1
|
Feb 20, 2019 |
GTVA212701FA-V2
| Peak Output Power | 300 (P3dB) | |
|---|---|---|
| Application | Telecom | |
| Typical Power (Average) | 56.2 W | |
| Power Gain | 19 dB | |
| Operating Voltage | 48 V | |
| Frequency | 1.8 - 2.2 GHz | |
| Package Type | Earless | |
| Efficiency | 38% | |
| Technology | LDMOS | |
High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz
SKU: GTVA212701FA-V2
The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced earless package.
Features
- GaN on SiC HEMT technology
- Input matched
- Typical pulsed CW performance (class AB), 2180 MHz, 48 V, 10 μs pulse width, 10% duty cycle
- Output power P3dB = 300 W
- Drain efficiency = 68.5%
- Gain = 17.5 dB
- Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
- Capable of handling 10:1 VSWR @ 48 V, 56.2 W (WCDMA) output power
- Low thermal resistance
- Pb-free and RoHS-compliant