PTFB181702FC-V1

Peak Output Power		180W (P1dB)
Application		Telecom
Typical Power (Average)		30 W
Operating Voltage		28 V
Frequency		1.8 - 2.2 GHz
Package Type		Earless
Efficiency		26%
Gain		19 dB
Technology		LDMOS

High Power RF LDMOS FET 170 W, 28 V, 1805 – 1880 MHz

SKU: PTFB181702FC-V1

The PTFB181702FC is a 170-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

Broadband internal matching
Typical CW performance, 1842 MHz, 28 V
- Output power at P1dB = 180 W
- Efficiency = 58%
- Gain = 18.5 dB
Capable of handling 10:1 VSWR @28 V, 170 W (CW) output power
Integrated ESD protection
Low thermal resistance
Pb-free and RoHS compliant

Documents

Data Sheets

Document Name	Date Updated	Download
PTFB181702FC-V1 Version: 4	Jan 22, 2019

Sales Terms

Document Name	Date Updated	Download
Sales Terms and Conditions Version: M	Jul 19, 2019

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PTFB181702FC-V1

High Power RF LDMOS FET 170 W, 28 V, 1805 – 1880 MHz

Documents

Data Sheets

Sales Terms

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PTFB181702FC-V1

High Power RF LDMOS FET 170 W, 28 V, 1805 – 1880 MHz

Documents

Data Sheets

Sales Terms

Thanks, we’re glad to hear from you. We’ll route your inquiry to the proper division and they will respond promptly.

Work with Us

Thanks, we’re glad to hear from you.
We’ll route your inquiry to the proper division and they will respond promptly.