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Peak Output Power 81W (P3dB)
Application Telecom
Typical Power (PSAT) 15 W
Operating Voltage 28 V
Frequency 2.3 - 2.7 GHz
Package Type Earless
Efficiency 45%
Gain 15.5 dB
Technology LDMOS

High Power RF LDMOS FET 100 W, 28 V, 2300 – 2400 MHz

SKU: PXAC241002FC-V1

The PXAC241002FC is a 100-watt LDMOS FET with an asymmetric design, intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.


  • Broadband internal input and output matching
  • Asymmetric Doherty design
    • Main: P1dB = 40 W Typ
    • Peak: P1dB = 60 W Typ
  • Typical Pulsed CW performance, 2400 MHz, 28 V, 160 μsec pulse width, 10% duty cycle (Doherty configuration)
    • Output power at P1dB = 34 W
    • Output power at P3dB = 81 W
    • Efficiency = 53%
    • Gain = 15.7 dB
  • Capable of handling 10:1 VSWR @28 V, 80 W (CW) output power
  • Integrated ESD protection
  • Human Body Model class 1C (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant