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WS1A3940 V1

WS1A3940-V1

ws1a2639_1_1
39.5 dBm GaN on SiC Power Amplifier Module; 3700-3980 MHz

The WS1A3940 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3700 MHz to 3980 MHz; from supply voltages up to 50 V; at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
WS1A3940-V1
New
Yes
GaN on SiC
3.7 GHz
3.98 GHz
60 W
13 dB
52%
48 V
Plastic
Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
WS1A3940-V1
New
Yes
GaN on SiC
3.7 GHz
3.98 GHz
60 W
13 dB
52%
48 V
Plastic
Features
  • GaN on SiC technology
  • Gate bias supplies for main and peaking sub-amplifiers from either side of the device
  • Integrated harmonic terminations
  • Pb-free and RoHS compliant
  • Recommended driver is the WSGPA01
Applications
  • Multi-standard Cellular Power Amplifiers
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