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10 W; 5 GHz; GaN on SiC General Purpose Power Amplifier
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The WSGPA01 is a GaN on SiC Discrete General Purpose Amplifier (GPA) designed for applications up to 5 GHz. The device operates from supply voltages up to 50 V and can achieve a P3dB of 10 W. It is housed in a 3 mm X 4 mm DFN package. While it is designed for communications infrastructure applications with crest factor reduced and digitally pre-distorted LTE or 5G NR signals; it may be suitable for other applications at frequencies up to 5 GHz; restricted only by its maximum operating conditions.

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GaN on SiC
5 GHz
10 W
18 dB
48 V
Surface Mount
  • GaN on SiC HEMT technology
  • Operating frequency : up to 5 GHz
  • P3dB : up to 10 W
  • Supply voltage : up to 50 V
  • Pb-free and RoHS compliant
  • Multi-standard Cellular Power Amplifiers
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Knowledge Center

Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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