Renewable Energy

Residential & Light Commercial Solar Systems

Wolfspeed silicon carbide is enabling smaller, lighter and more affordable residential solar systems

Silicon Carbide powering homes across the globe

Every home’s energy needs are unique. Wolfspeed’s Silicon Carbide devices are making it possible to build smaller, more efficient and power dense residential solar energy system, meaning clean energy is now more affordable, reliable and resilient than ever, all while meeting emerging efficiency standards.

Graphic showing string and micro inverter solar systems with photo and two dimensional examples

Wolfspeed’s 650 V discrete Silicon Carbide MOSFETs & diodes feature the industry’s lowest on-state resistances and switching losses for maximum efficiency and power density.

Composite image of the four 650V packages used for Wolfspeed's Discrete Silicon Carbide MOSFETs — Wolfspeed’s 650 V discrete Silicon Carbide MOSFETs & diodes feature the industry’s lowest on-state resistances and switching losses for maximum efficiency and power density.

Micro and Single-Phase Inverters

Solar inverters are an integral part of the residential solar system, converting DC current generated by the photovoltaic panel to grid-ready AC. Micro inverters are used in residential settings, converting power for 1-4 solar panels in systems that are < 7 kW. Single-phase string inverters connect larger solar arrays of 5-50 panels in systems that are 5-15 kW and are well suited to larger residential and light commercial applications.

Using Wolfspeed silicon carbide MOSFETs in residential solar inverters creates increased power density and lower switching losses. For example, replacing traditional IGBTs with Wolfspeed’s 650 V MOSFETs in a 7 kW residential single-phase inverter achieves 0.4% higher efficiency, a significant increase in power density (3 kW/L vs. 2.5 kW/L) and an impressive 48 kHz switching frequency, a full 32 kHz higher than using silicon. Wolfspeed’s C3M0045056K MOSFET is a key switch for single-phase systems offering a leading On Resistance over temperature performance and up to 30% less peak reverse recovery current.

Wolfspeed’s 60 kW Interleaved Boost Converter reference design demonstrates Wolfspeed’s C3M™ Silicon Carbide MOSFETs in a 4-phase interleaved boost converter.

Product Shot of Wolfspeed's Reference Design of a 60 kW Interleaved Boost Converter — Wolfspeed’s 60 kW Interleaved Boost Converter reference design demonstrates Wolfspeed’s C3M™ Silicon Carbide MOSFETs in a 4-phase interleaved boost converter.

String Inverters for Residential/Light Commercial Systems

Using MPPT Boost Converters in residential and light commercial solar arrays takes the variable voltages produced between panels and generates a consistent, higher voltage to the internal bus. Silicon Carbide Schottky diodes are a proven cost-effective way to maximize MPPT boost circuit performance. Adding Silicon Carbide MOSFETs can provide additional efficiency in even the most challenging designs. Combining 650 V silicon carbide MOSFETs with 650 V Schottky Diodes can further boost efficiency to 1.8% in a 7 kW residential system block with zero design changes.

Improved Reliability, Cleaner Power from Wolfspeed SiC

Wolfspeed Silicon Carbide is uniquely capable of incredible reliability and efficiency, even in the most demanding power applications. That’s because Wolfspeed Silicon Carbide offers:

Up To

30%

Lower Losses

Up To

50%

Higher Power Density

Up To

10%

System Cost Savings

Wolfspeed SiC Components for Solar Energy Systems

Residential and light commercial solar energy systems harness the power of the sun to power homes and small businesses. Using Wolfspeed Silicon Carbide in these systems greatly improves energy efficiency, reduces switching losses and meets emerging efficiency standards.

650 V Discrete Silicon Carbide MOSFETs

Wolfspeed’s family of 650 V SiC MOSFETs offer the industry’s lowest on-state resistances and switching losses for maximum efficiency and power density.

650 V Discrete Silicon Carbide Schottky Diodes

Wolfspeed’s 650 V Discrete SiC Schottky Diode technology is optimized for high-performance power electronics applications.

Discrete Silicon Carbide MOSFETs

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Discrete Silicon Carbide MOSFETs

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Discrete Silicon Carbide MOSFETs

Product SKU	Blocking Voltage	R_DS(ON) at 25°C	Generation	Current Rating	Gate Charge Total	Output Capacitance	Total Power Dissipation (P_TOT)	T_jmax	Package	Qualification
C3M0025065K	650 V	25 mΩ	Gen 3	97 A	112 nC	178 pF	326 W	175 °C	TO-247-4	Industrial
C3M0045065K	650 V	45 mΩ	Gen 3	49 A	63 nC	101 pF	176 W	175 °C	TO-247-4	Industrial
C3M0060065K	650 V	60 mΩ	Gen 3	37 A	46 nC	80 pF	150 W	175 °C	TO-247-4	Industrial