SiC Epitaxy
Keeping Pace with the World's Demand for SiC Power
Industry-Leading Flexibility and Scale
With more than 30 years of SiC development and manufacturing experience, Wolfspeed produces the industry’s broadest range of SiC materials. Offering n-type conductive SiC products and a variety of SiC epitaxy options, Wolfspeed delivers the quality and quantity necessary to support the rapidly expanding demand for high-efficiency, SiC power semiconductors.
When you partner with Wolfspeed, you get the best and most innovative materials.
Product Descriptions
Wolfspeed produces n-type and p-type SiC epitaxial layers on SiC substrates, and has the widest range of available layer thickness from sub-micron to >200μm. Unless noted otherwise on the product quotation, the epitaxial layer structure will meet or exceed the following specifications. Additional comments, terms and conditions may be found in the specification document.
Substrate Orientation: SiC Epitaxy is available only for off-axis substrates
Conductivity | n-type | p-type |
|---|---|---|
Dopant | Nitrogen | Aluminum |
Net doping density | ND-NA | NA-ND |
Silicon face | 5E14 – 1E19/cm3 | 5E14 – 1E20/cm3 |
Tolerance | ±20% | ±50% |
Thickness range | 0.2 - 200 microns | 0.2 - 200 microns |
Tolerance | ±8% of selected thickness | ±10% of selected thickness |
Contact Wolfspeed Materials Sales for specification on multi-layer or custom epitaxy requests
Product Specifications
Characteristics | Maximum Acceptability Limits | Test Methods | Defect Definitions | Methodology |
|---|---|---|---|---|
Scratches | cumulative scratch length ≤150 mm | Diffuse Illumination | D1 | M1,M2 |
Backside cleanliness | 95% clean | Diffuse Illumination | D2 | M1,M2 |
Edge chips | See Substrate Specifications | Diffuse Illumination | D3 | M2 |
Epi defects* | <3/cm3 | Lasertec SICA | D4-D5 | M3 |
Net doping | See Product Description table | CV | - | M4 |
Thickness | See Product Description table | FTIR | - | M5 |
*Note: 3mm edge exclusion, <70μm thickness