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Communications Infrastructure

The future arrives faster with Wolfspeed GaN on SiC technology

Overview

Tomorrow’s 5G demands today’s Wolfspeed GaN on SiC semiconductors.

Telecommunications infrastructure is continually evolving to meet the insatiable demand for a better mobile experience, driving countless cellular base station designs. This demand is encouraging network providers to source reliable and flexible solutions that help them meet these varying requirements.

Wolfspeed is a vertically integrated manufacturer that is expanding our SiC capacity to meet future demands. Our complete portfolio of products is engineered to support all cellular standards and frequency bands to help expand existing 4G system capability and to enable the next generation of 5G networks with state of the art GaN on SiC and LDMOS solutions.

Each day presents a greater need for connectivity across platforms, systems and applications, and 5G is poised to save the day. Successfully enabling a 5G-capable world requires increasingly advanced electronic components running cooler and faster, in smaller, lighter configurations that deliver bulletproof reliability and unprecedented energy efficiency. This is the need which motivates us, and GaN on SiC is our solution.

5G Demands

5G will transmit more data at faster speeds and with greater precision than ever – but only if the network infrastructure can reliably handle unprecedented throughput and backhaul. With 170+ billion field hours of GaN on SiC devices behind us we’ve got a proven ability to get your 5G deployment right the first time.

2020: A New Networking and Connectivity Era
Source: NOKIA Bell Labs
Cisco Forecasts 49 Exabytes/month of Mobile Data Traffic by 2021
Source: Cisco VNI Mobile, 2017
Mobile Data Traffic Grew 82% Between Q1 2018 and Q1 2019
Source: Ericsson Mobility Report

Unlock the future with GaN on SiC

The promise of unprecedented data speed, low latency and bandwidth that’s an order of magnitude wider has the world clamoring for 5G. However, RF designers are finding those gains can best be realized with GaN on SiC components. To achieve the higher linearization, greater power density and improved thermal conductivity required for full 5G capability requires performance improvement at the system level. Already the most capable semiconductor devices in the industry, Wolfspeed’s pioneering GaN on SiC components are offering improved efficiency and bandwidth, and as 5G continues to expand and mature we will contimue to expand and explore the advantages inherent in wide bandgap GaN on SiC for app developers seeking better performance everywhere.

Wolfspeed: A proven leader in GaN on SiC for 5G

With our 1991 release of the first commercial SiC wafers, Wolfspeed launched its quest to revolutionize the Power and RF semiconductor industry with Silicon Carbide. Thirty years later, as a vertically integrated manufacturer, we offer the industry’s deepest experience and broadest, most robust portfolio of GaN on SiC components and now stand prepared to lead the industry into the future of 5G.

1991
Launches first commercial SiC wafers
1998
Created industry’s first GaN on SiC HEMT
2000
Demonstrated industry’s first GaN on SiC HEMT MMIC
2008
Released a 90W GaN HEMT
2018
Acquired Infineon’s RF Power business
2019
Launches wideband GaN on SiC solution for 5G

The GaN on SiC Solution

Higher throughput requires more bandwidth, which in turn drives the need for more spectrum availability to ultimately reach the potential of 5G technologies. Newer high frequency bands are being made available that will benefit from the capabilities of GaN on SiC. The GaN on SiC combination of high power density, high efficiency, and wide bandwidth makes it the optimal solution for 5G. The GaN on SiC solution offers the faster switching speed and low latency needed for efficient spatial multiplexing, otherwise known as Massive MIMO (multiple in, multiple out), creating much broader bandwidth over an increasing density of small cells and base stations. It’s a connectivity backbone with a nervous system energized by GaN on SiC. Explore the science:

5G was once only a theory, a future advance that would require faster, smaller, lighter and higher efficiency electronic devices. The future is now with these Wolfspeed devices:

Why Wolfspeed RF?

SiC Expertise

Wolfspeed was first to launch a GaN on SiC HEMT (1998), first with a GaN HEMT MMIC grown on SiC substrate and, not coincidentally, first to successfully synthesize silicon carbide, in 1987. Over the last 30 years Wolfspeed has launched multiple generations of the world’s most powerful, energy efficient SiC and GaN on SiC devices for use in high-power RF telecommunications and aerospace applications.

Assortment

Wolfspeed fields the broadest, most extensive portfolio of next-generation GaN on SiC semiconductors, transistors, Schottky diodes, SIC-based MOSFETs and power modules for broadband, telecom, satellite and L-band, S-band, X-band, C-band, and Ku-band radar RF applications, and now, 5G networks. Further advances in capabilities and efficiencies are frequently brought to market through collaboration with RF applications developers.

Capacity

As the only vertically integrated semiconductor manufacturer, we control 100% of our SiC material supply. We doubled production capacity 2018 and are on track to double capacity again before the end of 2020. In addition, we’ve committed $1 billion to grow SiC wafer and device production capacity 30-fold by 2024 to deliver the tools needed by RF systems engineers.