Cree and STMicroelectronics Expand and Extend Existing Silicon Carbide Wafer Supply Agreement
Wafer supply agreement is a doubling in value to meet the rapidly growing demands of silicon carbide in automotive and industrial power devices globally
Pursue a more efficient future with SiC and GaN solutions for power electronics, RF, substrates and epitaxy.
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Choose from the most field-tested SiC and GaN technologies in any field.
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New Silicon Carbide XM3 Next Generation Power Modules
See the DifferenceE-Series Silicon Carbide MOSFETs and Diodes
The first commercial family of SiC MOSFETs and diodes to be automotive qualified and PPAP capable.
Wolfspeed is the future of 5G
Delve into the science of why GaN on SiC is the optimal material for 5G.
Faster cycle times, higher first-pass design success and greater reliability
Turn your designs into a faster, more reliable reality.
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Wolfspeed’s technologies are driving the innovation economy.
Cree is investing $1 billion in advanced manufacturing campuses that will accelerate industry transition from silicon to silicon carbide to meet EV and 5G market demand.