SiC technology: a powerful alternative to inefficient Si components in Server Power Supplies.
When datacenters are fitted with power supplies built with Wolfspeed’s Silicon Carbide (SiC) MOSFETs and diodes, they can deliver more computing power per square foot–with a lower electric bill.
A full 2% of all electrical energy in the U.S. is consumed by data centers, and that number is growing worldwide. Power supplies designed around Wolfspeed’s Silicon Carbide products improve thermal performance sufficiently to create up to 40% savings in energy costs on cooling alone. In the period from 2010 and 2020, servers running SiC devices will have contributed 620 billion kWh in energy savings. Imagine how much more energy can be saved over the next 10 years. Silicon Carbide also enables designers to meet the requirements for the 80+Titanium standard, and Wolfspeed’s products are ready to meet even tougher future standards.
Introducing Wolfspeed QFN 8×8 Schottky Diodes and TO-Leadless (TOLL) MOSFETs with a compact footprint enabling high efficiency and high power density in the most demanding server and data center applications.
Wolfspeed products represent the culmination of years of experience and expertise, where quality meets innovation to help bring your design forward. Wolfspeed’s 650V Silicon Carbide MOSFETs and Schottky diodes offer the industry’s lowest drain-to-source on-resistances and forward voltages, enabling the highest levels of efficiency to meet the highest standards of performance.
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | RDS(ON) at 25°C | Generation | Current Rating | Gate Charge Total | Output Capacitance | Total Power Dissipation (PTOT) | Maximum Junction Temperature | Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
650 V | 120 mΩ | Gen 3 | 21 A | 26 nC | 45 pF | 86 W | 175 °C | TO-263-7 | |||||
650 V | 120 mΩ | Gen 3 | 22 A | 28 nC | 45 pF | 98 W | 175 °C | TO-247-3 | |||||
650 V | 120 mΩ | Gen 3 | 22 A | 28 nC | 45 pF | 98 W | 175 °C | TO-247-4 | |||||
650 V | 120 mΩ | Gen 3 | 23 A | 25 nC | 43 pF | 89 W | 150 °C | TOLL | |||||
650 V | 60 mΩ | Gen 3 | 29 A | 46 nC | 80 pF | 150 W | 175 °C | TO-247-3 | |||||
650 V | 60 mΩ | Gen 3 | 36 A | 46 nC | 80 pF | 136 W | 175 °C | TO-263-7 | |||||
650 V | 60 mΩ | Gen 3 | 37 A | 46 nC | 80 pF | 150 W | 175 °C | TO-247-4 | |||||
650 V | 60 mΩ | Gen 3 | 38 A | 46 nC | 80 pF | 126 W | 150 °C | TOLL | |||||
C3M0045065J1 New | 650 V | 45 mΩ | Gen 3 | 47 A | 61 nC | 101 pF | 147 W | 150 °C | TO-263-7 | ||||
650 V | 45 mΩ | Gen 3 | 49 A | 63 nC | 101 pF | 176 W | 175 °C | TO-247-3 | |||||
650 V | 45 mΩ | Gen 3 | 49 A | 63 nC | 101 pF | 176 W | 175 °C | TO-247-4 | |||||
650 V | 45 mΩ | Gen 3 | 51 A | 59 nC | 101 pF | 160 W | 150 °C | TOLL | |||||
650 V | 25 mΩ | Gen 3 | 80 A | 109 nC | 178 pF | 271 W | 150 °C | TO-263-7 | |||||
650 V | 25 mΩ | Gen 3 | 97 A | 108 nC | 178 pF | 325 W | 175 °C | TO-247-3 | |||||
650 V | 25 mΩ | Gen 3 | 97 A | 112 nC | 178 pF | 326 W | 175 °C | TO-247-4 | |||||
650 V | 15 mΩ | Gen 3 | 120 A | 188 nC | 289 pF | 416 W | 175 °C | TO-247-3 | |||||
650 V | 15 mΩ | Gen 3 | 120 A | 188 nC | 289 pF | 416 W | 175 °C | TO-247-4 |
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | Current Rating | Generation | Forward Voltage(VF(type)) | Maximum Continuous Current (IF) | Total Capacitive Charge (QC (typ)) | Total Power Dissipation (PTOT) | Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
650 V | 4 A | Gen 6 | 1.27 V | 4 A | 16 nC | 73 W | TO-220-2 | |||||
650 V | 4 A | Gen 6 | 1.27 V | 4 A | 16 nC | 52 W | TO-252-2 | |||||
650 V | 6 A | Gen 6 | 1.27 V | 6 A | 23 nC | 73 W | TO-220-2 | |||||
650 V | 6 A | Gen 6 | 1.27 V | 6 A | 23 nC | 68 W | TO-252-2 | |||||
C6D06065Q New | 650 V | 6 A | Gen 6 | 1.27 V | 6 A | 23 nC | 69 W | QFN | ||||
650 V | 8 A | Gen 6 | 1.27 V | 8 A | 29 nC | 92.6 W | TO-220-2 | |||||
650 V | 8 A | Gen 6 | 1.27 V | 8 A | 29 nC | 85 W | TO-252-2 | |||||
C6D08065Q New | 650 V | 8 A | Gen 6 | 1.27 V | 8 A | 29 nC | 92 W | QFN | ||||
650 V | 10 A | Gen 6 | 1.27 V | 10 A | 35 nC | 109 W | TO-220-2 | |||||
650 V | 10 A | Gen 6 | 1.27 V | 10 A | 34 nC | 99 W | TO-252-2 | |||||
C6D10065Q New | 650 V | 10 A | Gen 6 | 1.27 V | 10 A | 34 nC | 119 W | QFN | ||||
650 V | 16 A | Gen 6 | 1.27 V | 16 A | 29 nC | 100 W | TO-247-3 | |||||
650 V | 20 A | Gen 6 | 1.27 V | 20 A | 35 nC | 116 W | TO-247-3 |
Wolfspeed not only offers the solutions to bring your design into the future of automotive technology, but our Reference Designs can help you accelerate your design cycle process. Reference Designs include full system design resource package with schematics, BOM, and more.
Name | Buy Online | Topology | Package | Designed By | Product SKU | View Product |
|---|---|---|---|---|---|---|
AC to DC | TO-247-3, TO-263-7 | Wolfspeed | CRD-02AD065N | |||
AC to DC | TO-247-4 | Wolfspeed | CRD-22AD12N | |||
AC to DC | FM3 | Wolfspeed | CRD25AD12N-FMC | |||
AC to DC | TO-247-3 | Partner | TIDA-01604 | |||
DC to DC | TO-247-3 | Wolfspeed | CRD-06600DD065N |
From its inception, Wolfspeed has been focused on the future, and that Silicon Carbide power is the technology that can bring your business forward.
Wolfspeed has more 30 years of experience in Silicon Carbide power and 7+ trillion installed field hours. We have invested in the future of Silicon Carbide technology and are expanding our capacity thirtyfold to support your business’s growth. With more than 20 years of diode and MOSFET production, we are equipped to supply the components that enable the future of Data Centers and Telecom Server Power Supplies.
