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Silicon Carbide Power Modules

Wolfspeed is able to offer the benefits of vertical integration from Silicon Carbide (SiC) material to package enabling us to provide leading Silicon Carbide technology throughout the supply chain. The goal of our power modules is to meet each customer's system design requirements with a package that offers best-in-class Silicon Carbide performance. We offer two distinct product categories to serve different customer value propositions: Industry-Standard Footprints and Optimized Footprints.
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Silicon Carbide Power Modules
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CAB400M12XM3
XM3
Half-Bridge
1200 V
400 A
4 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
Yes
XM3
Half-Bridge
1200 V
425 A
3.2 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
Yes
XM3
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
Yes
EAB450M12XM3
New
XM3
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
Yes
HM High Performance 62 mm
Half-Bridge
1700 V
380 A
3.3 mΩ
Gen 3 MOS + Diodes
175 °C
110 mm x 65 mm x 12.2 mm
Yes
HM High Performance 62 mm
Half-Bridge
1200 V
480 A
2.29 mΩ
Gen 3 MOS + Diodes
175 °C
110 mm x 65 mm x 12.2 mm
Yes
HM High Performance 62 mm
Half-Bridge
1700 V
500 A
2.5 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Yes
HM High Performance 62 mm
Half-Bridge Rectifier
1700 V
600 A
Gen 6
175 °C
110 mm x 65 mm x 12.2 mm
Yes
HM High Performance 62 mm
Half-Bridge Rectifier
1200 V
600 A
Gen 6
175 °C
110 mm x 65 mm x 12.2 mm
Yes
HM High Performance 62 mm
Half-Bridge
1700 V
650 A
1.67 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Yes
HM High Performance 62 mm
Half-Bridge
1200 V
760 A
1.33 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Yes
HM High Performance 62 mm
Half-Bridge Right GK for Paralleling
1200 V
760 A
1.33 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
Yes
GM3
Half-Bridge
1200 V
146 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
Yes
GM3
Half Bridge (AlN substrate)
1200 V
194 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
Yes
GM3
Half Bridge (AlN substrate)
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
Yes
GM3
Half-Bridge
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
Yes
FM3
Six-pack (three-phase)
1200 V
40 A
32 mΩ
Gen 3 MOS
150 °C
Yes
FM3
Six-pack (three-phase)
1200 V
51 A
21 mΩ
Gen 3 MOS
150 °C
Yes
FM3
Half-Bridge
1200 V
78 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
Yes
FM3
Half-Bridge
1200 V
105 A
11 mΩ
Gen 3 MOS
150 °C
Yes
62mm
Half-Bridge
1200 V
120 A
13 mΩ
Gen 2 MOS + Diodes
150 °C
106 x 62 x 30 mm
No
62mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
106 x 62 x 30 mm
Yes
62mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
106 x 62 x 30 mm
Yes
62mm
Half-Bridge
1700 V
225 A
8 mΩ
Gen 2 MOS + Diodes
150 °C
106 x 62 x 30 mm
No
62mm
Half-Bridge
1200 V
300 A
4.2 mΩ
Gen 2 MOS + Diodes
150 °C
106 x 62 x 30 mm
No
62mm
Half-Bridge
1200 V
300 A
4 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm
Yes
62mm
Half-Bridge
1200 V
350 A
4 mΩ
Gen 3 MOS + Diodes
150 °C
106 x 62 x 30 mm
Yes
62mm
Half-Bridge
1200 V
350 A
4 mΩ
Gen 3 MOS + Diodes
150 °C
106 x 62 x 30 mm
Yes
62mm
Half-Bridge
1200 V
400 A
3.25 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm
Yes
62mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS
175 °C
106 x 62 x 30 mm
Yes
62mm
Half-Bridge
1200 V
530 A
2.67 mΩ
Gen 3 MOS + Diodes
150 °C
106 x 62 x 30 mm
Yes
62mm
Half-Bridge
1200 V
530 A
2.67 mΩ
Gen 3 MOS + Diodes
150 °C
106 x 62 x 30 mm
Yes
45mm
Six-pack (three-phase)
1200 V
20 A
80 mΩ
Gen 2 MOS + Diodes
150 °C
108 x 45 x 21 mm
No
45mm
Six-pack (three-phase)
1200 V
50 A
25 mΩ
Gen 2 MOS + Diodes
150 °C
108 x 45 mm
No
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Power
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Renewable Energy

Sun to Wheels: Powering a Renewable Future with Silicon Carbide

Countries are powering down fossil-fuel energy generation in favor of renewables. By simply swapping out traditional silicon semiconductor technology for Silicon Carbide, systems can realize improvements in efficiency.
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