We always act with integrity and respect for our people, workplace and community. Relationships matter. We value everyone’s contribution and an environment of spirited and open debate.
We are a powerhouse semiconductor company focused on Silicon Carbide and GaN technologies
Who We Are
We’re leading the transformation from silicon to silicon carbide and GaN as we shape the future of semiconductor markets: the transition to electric vehicles, the move to faster 5G networks, the evolution of renewable energy and energy storage, and the advancement of industrial applications. After more than thirty years of forging new technology adoption and transformation, our Wolfspeed® power and radio frequency (RF) semiconductors are leading the industry through unrivaled expertise and capacity. What’s next? We believe anything is possible through hard work, collaboration and a passion for innovation.
Learn how we’re enhancing economic value for our customers, supporting our people and communities and protecting our environment.
Our values are a simple, yet powerful, reflection of who we are and how we act; they are in all that we say, do and achieve for our company. They reflect both our great history of disruptive innovation and set the tone for the exciting future ahead. We do amazing things in a human way. Our employees from around the world across every business function shared their thoughts about our values through focus groups, emails and conversations. As a result, we’ve established principles that represent what we want the experience to be for our employees as well as the customers, partners and communities we serve.
We are accountable to each other and committed to the highest standards of work and behavior.
We succeed or fail together.
Our passion for making the world better through innovation means we take risks and question conventional thinking, developing new technologies and ways of doing business—leading the way, every single day.
We do what others say can’t be done.
More and more industries are leveraging the industry-leading performance of Wolfspeed Silicon Carbide and GaN as they develop next-generation applications and devices for Power and RF.
Silicon Carbide Expertise
Wolfspeed’s founders were the first to successfully commercialize Silicon Carbide, and for more than 30 years have focused on designing and supplying the industry’s highest-performing Silicon Carbide and GaN-on-Silicon-Carbide materials and devices for high-power applications.
As a pioneer in Silicon Carbide semiconductors, we now field the world’s broadest, most capable portfolio of next-generation, Silicon Carbide MOSFETs, Schottky diodes and power modules for power and industry needs.
We are currently constructing the world’s largest Silicon Carbide fabrication in Marcy, New York. This brand new, state-of-the-art power and RF wafer fabrication facility will be automotive-qualified and 200mm-capable. It is complemented by our mega materials factory expansion currently underway at our Durham, North Carolina headquarters.
How do leaders lead? By being first.
We have spent more than 30 years establishing a global brand known for innovation, financial strength and reliable materials sourcing, staffed by the most forward-looking thinkers and doers in any scientific enterprise. When we transitioned to the Wolfspeed name in 2021, we were poised to build on that foundation with a renewed enthusiasm for the future.
Commercialized the world’s first Silicon Carbide blue LED which enabled full color LED display technology and opened the door to longer lasting and more efficient applications such as, computer screens, other electronics and eventually, smartphones.
Release the world’s first commercial Silicon Carbide wafers, delivering the industry’s most robust, highest-quality materials for the creation of Silicon carbide and GaN-on-Silicon Carbide devices.
Designed our blue GaN-on-Silicon-Carbide LEDs into the Volkswagen dashboard which was a first and launched a trend in the automotive industry that is still reflected today.
Created the industry’s first GaN HEMT on Silicon Carbide which enabled increased signal gain and a 4x power density (watts per mm) increase for wireless and broadcast high-power applications.
Introduced InGaN blue and green LED which revolutionized keyboards and displays in the cell phone industry.
Demonstrated first ever GaN-on-Silicon-Carbide MMIC with record power density, proving GaN-on-Silicon-Carbide was greatly superior to GaAs, not only supporting higher power output, but also allowing smaller die size for equal power.
Released our first 600V commercial Silicon Carbide JBS Schottky diode that enabled the creation of ENERGY STAR® 80Plus Gold, Platinum and Titanium power supplies.
Started the LED Revolution with the first lighting-class LED @ 100 LPW.
Released industry’s first Silicon Carbide MOSFET, a market maker and key building block for more efficient power conversion systems, decreasing size, weight and bill of materials.
Released the first commercially available MOSFETs to meet Automotive AEC-Q101 Standards.
Developed the XM3 power module platform which maximizes the benefits of Silicon Carbide, while keeping the module and system design robust, simple, and cost effective.