Wolfspeed Silicon Carbide (SiC) MOSFETs enable higher switching frequencies and reduce the size of components like inductors, capacitors, filters & transformers. Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability. We established a new benchmark for energy-efficient power switches when we created the industry's first fully-qualified Silicon Carbide MOSFET in 2011, and we have been perfecting the technology ever since.
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
See how Wolfspeed LTspice models can make designing with silicon carbide in power electronics systems more efficient, cost-effective, and accurate. Get started optimizing your system design, without the need for physical samples or test kits.
The design and geometry of power modules enable EMI modeling which empowers designers to predict and understand their system’s EMI behavior early in the design process.
Join Wolfspeed Applications Engineer Chris New as he unboxes the 25 kW three-phase inverter reference design and demonstrates how to get started evaluating power electronic system performance right out of the box.