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1000V Discrete SiC MOSFETs

1000V Discrete SiC MOSFETs

Wolfspeed 1000V Discrete Silicon Carbide MOSFETs
Silicon carbide solutions for fast switching power devices
SpeedFit Design SimulatorLTspice & PLECS Models

Wolfspeed offers a series of 1000V MOSFETs optimized for fast switching devices such as electric-vehicle charging systems; industrial power supplies; and renewable energy systems.

The 1000V SiC MOSFETs address many power design challenges by providing a unique device with low on-Resistance; very low output capacitance; and low source inductance for a perfect blend of low switching losses and low conduction losses. Compared to silicon-based solutions; Wolfspeed silicon carbide power device technology enables increased system power density; higher switching frequencies; reduced component-count; and reduced size of components like inductors; capacitors; filters & transformers.

Product SKU
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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
Recommended For New Design?
Qualification
C3M0065100K
1000 V
65 mΩ
Gen 3
35 A
35 nC
60 pF
113.5 W
150 °C
TO-247-4
Yes
Industrial
C3M0120100K
1000 V
120 mΩ
Gen 3
22 A
21.5 nC
40 pF
83 W
150 °C
TO-247-4
Yes
Industrial
C3M0065100J
1000 V
65 mΩ
Gen 3
35 A
35 nC
60 pF
113.5 W
150 °C
TO-263-7
Yes
Industrial
C3M0120100J
1000 V
120 mΩ
Gen 3
22 A
21.5 nC
40 pF
83 W
150 °C
TO-263-7
Yes
Industrial
Product SKU
Buy Online
Request Sample
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
Recommended For New Design?
Qualification
C3M0065100K
1000 V
65 mΩ
Gen 3
35 A
35 nC
60 pF
113.5 W
150 °C
TO-247-4
Yes
Industrial
C3M0120100K
1000 V
120 mΩ
Gen 3
22 A
21.5 nC
40 pF
83 W
150 °C
TO-247-4
Yes
Industrial
C3M0065100J
1000 V
65 mΩ
Gen 3
35 A
35 nC
60 pF
113.5 W
150 °C
TO-263-7
Yes
Industrial
C3M0120100J
1000 V
120 mΩ
Gen 3
22 A
21.5 nC
40 pF
83 W
150 °C
TO-263-7
Yes
Industrial
Features
  • Minimum of 1kV Vbr across entire operating temperature range (no need to derate)
  • High-speed switching with low output capacitance
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
  • Kelvin source pin to reduce switching losses and ringing
Benefits
  • Enables a reduction in overall system cost
  • Improves system efficiency while decreasing system-size
  • Enables a 30% reduction in component-count while achieving more than 3x increase in power density and a 33% increase in output power
  • Enables hard switching topologies
Applications
  • Industrial power supplies
  • Renewable energy systems
  • Fast electric vehicle charging systems
  • Onboard electric vehicle charging
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Application Notes
Application Notes
Application Notes
[Design only; boards no longer available]
Application Notes
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Data Sheets
Data Sheets
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Articles and Papers
Product Catalog
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