1000 V Silicon Carbide (SiC) power MOSFETs for fast switching power devices
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Wolfspeed offers a series of 1000 V Silicon Carbide (SiC) MOSFETs optimized for fast switching devices such as electric-vehicle charging systems; industrial power supplies; and renewable energy systems.
The 1000 V Silicon Carbide MOSFETs address many power design challenges by providing a unique device with low on-Resistance; very low output capacitance; and low source inductance for a perfect blend of low switching losses and low conduction losses. Compared to silicon-based solutions; Wolfspeed silicon carbide power device technology enables increased system power density; higher switching frequencies; reduced component-count; and reduced size of components like inductors; capacitors; filters & transformers.
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1000 V Discrete Silicon Carbide MOSFETs
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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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