By replacing traditional Si components with Wolfspeed Silicon Carbide upgrades, DC fast charger designs can realize significant gains in system efficiency, power density, and reliability.
Fast charging DC stations can charge Electric Vehicles in just 30 minutes by bypassing the onboard charger (OBC) for rapid, direct battery charging.
Consumer expectations have always been shaped by past experience — and the way we travel by car is no exception. For the entire history of automotive travel, fossil-fueled cars could be easily replenished by a quick stop at a gas station. Correspondingly, one of the biggest challenges of electric cars is how long it takes to charge them and the availability of rapid-charge systems.
When drivers of electric vehicles (EVs) need a charge while on the go, the best option is off-board DC fast chargers, which enable rapid charging of EV batteries. Unfortunately, traditional silicon’s (Si’s) switching performance is limited, which means that even the fastest of Si-based chargers is still going to be too slow for the average consumer’s expectation. Alternatively, Silicon Carbide (SiC) and its unique physical properties enable superior switching speed and higher power delivery— which means an efficient charge.
By replacing traditional Si components with Silicon Carbide upgrades, DC fast charger designs can realize significant gains in system efficiency, power density, and reliability. These fast charger designs are typically constructed with stacked groups of power conversion blocks that are each 20 kW to 60 kW.
Furthermore, Silicon Carbide enables a much simpler design that offers many benefits, including fewer components, reduced system cost, higher efficiency, smaller size, and better bidirectional charging for Vehicle to Grid (V2G) capability.
Whether you have a 6kW on-board charger or a 150kW to 350kW and beyond fast off-board charger you need product scalability. Wolfspeed Silicon Carbide products scale from 600V through 1700V, with 3.3 kV and above in development, and from 1 amp to nearly 1000 amps in power modules; to offer a complete product portfolio to furnish the different design considerations required. Choose from Silicon Carbide discrete products, smaller baseplateless modules built with industry standards, and Silicon Carbide optimized higher power modules. Wolfspeed has the breadth of products to enable your fast charging designs.
Wolfspeed products represent the culmination of years of experience and expertise, where quality meets innovation to help bring your design forward. Wolfspeed’s 1200V and 650V Silicon Carbide MOSFETs offer the industry’s lowest drain-to-source on-resistances, enabling the highest efficiency to give you the maximum charge when you’re on the road.
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | RDS(ON) at 25°C | Generation | Current Rating | Gate Charge Total | Output Capacitance | Total Power Dissipation (PTOT) | Maximum Junction Temperature | Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1200 V | 75 mΩ | Gen 3 | 30 A | 51 nC | 58 pF | 113.6 W | 150 °C | TO-263-7 | |||||
1200 V | 75 mΩ | Gen 3 | 30 A | 54 nC | 58 pF | 113.6 W | 150 °C | TO-247-3 | |||||
1200 V | 75 mΩ | Gen 3 | 32 A | 51 nC | 58 pF | 113.6 W | 150 °C | TO-247-4 | |||||
650 V | 45 mΩ | Gen 3 | 47 A | 61 nC | 101 pF | 147 W | 150 °C | TO-263-7 | |||||
1200 V | 32 mΩ | Gen 3 | 63 A | 118 nC | 129 pF | 283 W | 175 °C | TO-247-4 | |||||
1200 V | 32 mΩ | Gen 3 | 63 A | 114 nC | 129 pF | 283 W | 175 °C | TO-247-3 | |||||
1200 V | 40 mΩ | Gen 3 | 64 A | 61 nC | 94 pF | 272 W | 150 °C | TO-263-7 | |||||
1200 V | 40 mΩ | Gen 3 | 66 A | 101 nC | 103 pF | 326 W | 175 °C | TO-247-3 | |||||
1200 V | 40 mΩ | Gen 3 | 66 A | 99 nC | 103 pF | 326 W | 175 °C | TO-247-4 | |||||
1200 V | 32 mΩ | Gen 3 | 68 A | 111 nC | 133 pF | 277 W | 150 °C | TO-263-7 | |||||
650 V | 25 mΩ | Gen 3 | 80 A | 109 nC | 178 pF | 271 W | 150 °C | TO-263-7 | |||||
1200 V | 21 mΩ | Gen 3 | 81 A | 160 nC | 180 pF | 469 W | 175 °C | TO-247-3 | |||||
1200 V | 21 mΩ | Gen 3 | 100 A | 162 nC | 180 pF | 469 W | 175 °C | TO-247-4 | |||||
1200 V | 16 mΩ | Gen 3 | 115 A | 207 nC | 230 pF | 556 W | 175 °C | TO-247-3 | |||||
1200 V | 16 mΩ | Gen 3 | 115 A | 211 nC | 230 pF | 556 W | 175 °C | TO-247-4 |
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | Current Rating | Generation | Forward Voltage(VF(type)) | Maximum Continuous Current (IF) | Total Capacitive Charge (QC (typ)) | Total Power Dissipation (PTOT) | Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
650 V | 8 A | Gen 3 | 1.5 V | 8 A | 50 nC | 176 W | TO-263-2 | |||||
650 V | 10 A | Gen 6 | 1.27 V | 10 A | 35 nC | 109 W | TO-220-2 | |||||
650 V | 10 A | Gen 6 | 1.27 V | 10 A | 34 nC | 99 W | TO-252-2 | |||||
650 V | 16 A | Gen 6 | 1.27 V | 16 A | 29 nC | 100 W | TO-247-3 | |||||
650 V | 20 A | Gen 6 | 1.27 V | 20 A | 35 nC | 116 W | TO-247-3 | |||||
650 V | 20 A | Gen 3 | 1.5 V | 20 A | 110 nC | 250 W | TO-247-3 | |||||
650 V | 30 A | Gen 3 | 1.5 V | 30 A | 43 nC | 179 W | TO-247-3 |
Wolfspeed Silicon Carbide power modules can enable a simpler fast charging circuit topology using fewer components at very high efficiency (97.0% peak), switching at more than twice the frequency (45-250kHz). The higher frequency allows smaller magnetics and capacitors which, in turn, accounts for the smaller, lighter, and less costly system.
Wolfspeed WolfPACK™ FM3 and GM3 power modules are ideal for mid-power applications, including EV fast charging. The modules come in MOSFET half-bridge and six-pack configurations with a variety of mΩ options. The devices feature a baseplateless design, compact footprint, and press-fit pins, providing efficient, powerful performance while keeping system layouts straightforward for design and assembly processes.
The product family includes high performance Aluminum Nitride (AlN) substrate modules, which can reduce thermal resistance by over 50% and provide 7x higher thermal conductivity compared to Alumina.
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Maximum Junction Temperature | Module Size | View Product |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GM3 | Half-Bridge | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM3 | Half Bridge (AlN substrate) | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM3 | Half-Bridge | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM3 | Half Bridge (AlN substrate) | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM3 | Half Bridge (AlN substrate) | 1200 V | 181 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM3 | Half-Bridge | 1200 V | 160 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM3 | Half-Bridge | 1200 V | 160 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM3 | Half Bridge (AlN substrate) | 1200 V | 181 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
FM3 | Half-Bridge | 1200 V | 117 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM3 | Half-Bridge | 1200 V | 117 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
GM3 | Half-Bridge | 1200 V | 141 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM3 | Half-Bridge | 1200 V | 141 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
FM3 | Half-Bridge | 1200 V | 84 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM3 | Half-Bridge | 1200 V | 84 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
GM3 | Six-pack (three-phase) | 1200 V | 50 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
GM3 | Six-pack (three-phase) | 1200 V | 50 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | ||||||
FM3 | Six-pack (three-phase) | 1200 V | 30 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
CBB021M12FM3 New | FM3 | Full-Bridge | 1200 V | 48 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | |||||
FM3 | Six-pack (three-phase) | 1200 V | 30 A | 21 mΩ | Gen 3 | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM3 | Full-Bridge | 1200 V | 48 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM3 | Six-pack (three-phase) | 1200 V | 30 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
CBB032M12FM3 New | FM3 | Full-Bridge | 1200 V | 37 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | |||||
FM3 | Six-pack (three-phase) | 1200 V | 30 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | ||||||
FM3 | Full-Bridge | 1200 V | 37 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm |
Wolfspeed not only offers the solutions to bring your design into the future of automotive technology, but our Reference Designs can help you accelerate your design cycle process. Reference Designs include full system design resource package with schematics, BOM, and more.
Name | Buy Online | Topology | Status | Package | Designed By | Product SKU | View Product |
|---|---|---|---|---|---|---|---|
AC to DC | Paper Design Only | TO-247-4 | Wolfspeed | CRD-22AD12N | |||
AC to DC | Paper Design Only | TO-247-3 | Texas Instruments | ||||
AC to DC | Paper Design Only | FM3 | Wolfspeed | CRD25AD12N-FMC | |||
AC to DC, DC to DC | Paper Design Only | TO-247-4, TO-247-3 | Wolfspeed | CRD-06600FF065N-K | |||
AC to DC, DC to DC | Paper Design Only | TO-247-4 | Wolfspeed | CRD-06600FF10N | |||
DC to DC | Paper Design Only | TO-247-4 | Wolfspeed | CRD-22DD12N | |||
DC to DC | Paper Design Only | TO-247-4 | Texas Instruments | TIDA-010054 | |||
DC to DC | Paper Design Only | TO-247-4 | Texas Instruments | TIDM-02002 | |||
DC to DC | Paper Design Only | TO-247-4 | Wolfspeed | CRD-20DD09P-2 | |||
DC to DC | Paper Design Only | TO-247-3 | Wolfspeed | CRD-06600DD065N |
From its inception, Wolfspeed has been focused on the future, and that Silicon Carbide power is the technology that can bring your business forward.
Wolfspeed has more 30 years of experience in Silicon Carbide power and 7+ trillion installed field hours. We have invested in the future of Silicon Carbide technology and are expanding our capacity thirtyfold to support your business’s growth. With more than 20 years of diode and MOSFET production, we are equipped to supply the components that enable the future of Off-Board DC Fast Chargers.
