
Servo Drives
Wolfspeed silicon carbide meets efficiency standards and improves thermal performance without sacrificing precision or power.
Design embedded servo drives with Wolfspeed Silicon Carbide
Designing servo drives with Wolfspeed silicon carbide enables smaller, more efficient and power dense embedded servo drives. Silicon carbide can also overcome the thermal challenges that plague IGBTs, further reducing the size of drives and resulting in longer system life.
Optimize servo drive systems with Wolfspeed 650 V MOSFETs

Wolfspeed 650 V silicon carbide MOSFETs allow servo drive designers to optimize systems for maximum efficiency at a reduced size and cost. For example, in an 11 kW, 8 kHz system upgrading to a semi-bridgeless Totem Pole-PFC and replacing IGBTs in the inverter with drop-in silicon carbide MOSFETS yields:
- 2% efficiency improvement
- 220 W reduction in losses
Redesigning the PFC using a bridgeless totem pole topology and upgrading the inverter with silicon carbide MOSFETs improves efficiency even more to 2.4%.
When compared to high-speed, soft-switched IGBTs, Wolfspeed 650 V MOSFETs offer drastically lower conduction losses and almost no switching losses, significantly improving the performance of embedded industrial motor drives.
Reduce servo drive size while boosting efficiency at higher temperatures with Wolfspeed silicon carbide

Wolfspeed’s Six-Pack WolfPACK™ power modules enable superior performance and system efficiency. When compared to the best IGBT solutions in a 25 kW inverter system, the WolfPACK™ achieves 1.1% higher efficiency with a 77% smaller heat sink (0.31 L vs 1.37 L).
Conversely, the WolfPACK can run at higher loads with smaller heat sinks, allowing designers to design embedded drive systems that are smaller and lighter and require up to 77% smaller heat sinks. Even at a higher 16 kHz switching frequency with the same heat sink, silicon carbide remains thermally stable and outperforms silicon IGBTs, causing further downsizing of passives. The smaller, lighter servo drives cause fewer complications when integrating the servo motor as often seen in industrial automation.
SiC MOSFET remains cooler than all the Si IGBTs, even with 77% smaller heat sink


25 kW inverter, Fsw = 8 kHz, 77% reduced SiC MOSFET Heat Sink: 0.31L (1.6°C/W) vs. 1.37 L (0.73°C/W)
The graphs above demonstrate an improvement in efficiency with the silicon carbide six-pack WolfPACK modules vs IGBT modules in a 25 kW inverter with an 0.8 L heat sink. As the power level increases, the junction temperature of 50 A and 100 A rated silicon IGBTs increases, causing them to fail, while Wolfspeed 32 A silicon carbide MOSFET remains stable and well below the failure threshold.
SiC enables superior performance even at higher switching frequencies


25 kW inverter, Fsw = 16 kHz, Larger Si IGBT Heat Sink: 1.37 L (0.7°C/W) , smaller SiC Heat Sink 0.8 L (0.99°C/W)
At 16kHz switching frequency, 100 A and 50 A rated silicon IGBTs fail thermally beyond 10 kW and 15 kW respectively, despite using a 41% larger heat sink size than 32 A Wolfspeed silicon carbide MOSFETs.
Model silicon carbide efficiency with SpeedFit™

Maximize servo drive efficiency when you simulate with SpeedFit Design Simulator, the first step to selecting the right devices for your design. Our online simulation tool offers an easy-to-use interface for evaluating Wolfspeed’s silicon carbide MOSFETs, diodes and power modules many power topologies. Start simulating today and harness the power of Wolfspeed silicon carbide in your servo drives.
Wolfspeed Silicon Carbide Components for Servo Drive
Wolfspeed’s products represent the culmination of years of experience and expertise, where quality meets innovation to help bring your design forward.
Discrete Silicon Carbide MOSFETs
Discrete Silicon Carbide MOSFETs
Discrete Silicon Carbide MOSFETs - Filter By
Discrete Silicon Carbide MOSFETs
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | RDS(ON) at 25°C | Generation | Current Rating | Gate Charge Total | Output Capacitance | Total Power Dissipation (PTOT) | Maximum Junction Temperature | Package | Recommended For New Design? | Qualification |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1200 V | 75 mΩ | Gen 3 | 32 A | 51 nC | 58 pF | 113.6 W | 150 °C | TO-247-4 | Yes | Industrial | |||||
1200 V | 75 mΩ | Gen 3 | 30 A | 51 nC | 58 pF | 113.6 W | 150 °C | TO-263-7 | Yes | Industrial | |||||
1200 V | 40 mΩ | Gen 3 | 64 A | 61 nC | 94 pF | 272 W | 150 °C | TO-263-7 | Yes | Industrial | |||||
650 V | 15 mΩ | Gen 3 | 120 A | 188 nC | 289 pF | 416 W | 175 °C | TO-247-4 | Yes | Industrial | |||||
650 V | 45 mΩ | Gen 3 | 47 A | 61 nC | 101 pF | 147 W | 150 °C | TO-263-7 | Yes | Industrial | |||||
650 V | 60 mΩ | Gen 3 | 36 A | 46 nC | 80 pF | 136 W | 175 °C | TO-263-7 | Yes | Industrial | |||||
1200 V | 32 mΩ | Gen 3 | 68 A | 111 nC | 133 pF | 277 W | 150 °C | TO-263-7 | Yes | Industrial |
Discrete Silicon Carbide Schottky Diodes
Discrete Silicon Carbide Schottky Diodes
Discrete Silicon Carbide Schottky Diodes - Filter By
Discrete Silicon Carbide Schottky Diodes
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | Current Rating | Generation | Forward Voltage(VF(type)) | Maximum Continuous Current (IF) | Total Capacitive Charge (QC (typ)) | Total Power Dissipation (PTOT) | Package | Qualification | Recommended For New Design? |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1200 V | 10 A | Gen 4 | 1.5 V | 10 A | 52 nC per leg | 170 W | TO-252-2 | Industrial | Yes | |||||
650 V | 16 A | Gen 3 | 1.5 V | 16 A | 44 nC | 150 W | TO-220-2 | Industrial | Yes | |||||
650 V | 16 A | Gen 6 | 1.27 V | 16 A | 29 nC | 100 W | TO-247-3 | Industrial | Yes |
Silicon Carbide Power Modules
Silicon Carbide Power Modules
Silicon Carbide Power Modules - Filter By
Silicon Carbide Power Modules
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Maximum Junction Temperature | Module Size | Recommended For New Design? | Qualification | View Product |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FM3 | Six-pack (three-phase) | 1200 V | 30 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Yes | Industrial |
Reference Designs
Reference Designs
Reference Designs - Filter By
Reference Designs
Name | Buy Online | Topology | Status | Package | Designed By | Product SKU | View Product |
---|---|---|---|---|---|---|---|
Three-Phase, 2-Level | Available for Purchase | FM3 | Wolfspeed | CRD25DA12N-FMC | |||
Three-Phase, 2-Level | Paper Design Only | TO-247-4 | Wolfspeed | CRD-22AD12N |