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An electrician works on low voltage cabinet representing how Wolfspeed’s MOSFETs and diodes pack more backup power into a single enclosure.
Industrial

Uninterruptible Power Supplies

Future-proof your next UPS with Wolfspeed’s next-gen wide bandgap SiC semiconductors.

Improved Reliability, Cleaner Power from Wolfspeed Silicon Carbide

For mission-critical systems, a power loss can be truly catastrophic, and having a reliable backup power source is absolutely essential.

At one end of the spectrum is a simple standby battery backup that powers a home computer long enough to enable a safe shutdown. At the other end are complex, mission-critical IT systems that require customized, redundant, double-conversion uninterruptible power supply (UPS) technologies that convert AC from the grid to an DC source that keeps the batteries charged. That DC source is also converted back to AC to power 100% of the system, allowing for zero transfer time during an interruption, and since the DC source is isolated from the grid the AC signal is clean and immune from any grid instability.

Solutions for UPS Design

UPS systems need to be able to provide reliable, clean power at any moment — and every percent of efficiency improvement means longer backup time. Wolfspeed’s Silicon Carbide MOSFETs and Schottky diodes enable 30% lower losses, has 15% system cost saving, and up to 50% higher power density than their silicon counterparts. The results are UPS systems that you can rely on when you need them the most, packing more backup power into a single enclosure, or into smaller and lighter systems for space-constrained environments.


The Numbers are on Your Side.

Wolfspeed Silicon Carbide is uniquely capable of incredible reliability and efficiency, even in the most demanding power applications.

Up To
30%
Lower Losses
Up To
50%
Higher Power Density
Up To
15%
System Cost Savings

Wolfspeed Silicon Carbide Components for UPS Systems

UPS systems must often deliver high currents with pin-point precision at a moment’s notice. That’s no easy task, but Wolfspeed’s Silicon Carbide MOSFET and Schottky diode products are up for the challenge.

XM3 Half-Bridge Silicon Carbide Power Module Family

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XM3 Half-Bridge Silicon Carbide Power Module Family

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XM3 Half-Bridge Silicon Carbide Power Module Family

Product SKU
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Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
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CAB320M17XM3
XM
Half-Bridge
1700 V
320 A
3.5 mΩ
Gen 3
175 °C
80 x 53 x 19 mm
XM
Half-Bridge
1200 V
400 A
4 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
XM
Half-Bridge
1200 V
425 A
3.2 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
XM
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
XM
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm

Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family

Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family

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Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family

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Request Sample
Data Sheet
CAD Model
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
GM
Half-Bridge
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM
Half Bridge (AlN substrate)
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM
Half-Bridge
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM
Half Bridge (AlN substrate)
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM
Half Bridge (AlN substrate)
1200 V
181 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM
Half-Bridge
1200 V
160 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM
Half-Bridge
1200 V
160 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM
Half Bridge (AlN substrate)
1200 V
181 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
FM
Half-Bridge
1200 V
117 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM
Half-Bridge
1200 V
117 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
GM
Half-Bridge
1200 V
141 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM
Half-Bridge
1200 V
141 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
FM
Half-Bridge
1200 V
84 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM
Half-Bridge
1200 V
84 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
GM
Six-pack (three-phase)
1200 V
50 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM
Six-pack (three-phase)
1200 V
50 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
FM
Six-pack (three-phase)
1200 V
30 A
21 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM
Full-Bridge
1200 V
48 A
21 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM
Six-pack (three-phase)
1200 V
30 A
21 mΩ
Gen 3
150 °C
62.8 mm x 33.8 mm
FM
Full-Bridge
1200 V
48 A
21 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM
Six-pack (three-phase)
1200 V
30 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM
Full-Bridge
1200 V
37 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM
Six-pack (three-phase)
1200 V
30 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM
Full-Bridge
1200 V
37 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm

62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

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62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

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Data Sheet
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Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
62 mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
62 mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
HAS175M12BM3
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Soon
62 mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
62 mm
Half-Bridge
1200 V
300 A
4 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm
62 mm
Half-Bridge
1700 V
310 A
4.29 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
62 mm
Half-Bridge
1700 V
310 A
4.29 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
HAS310M17BM3
Coming
Soon
62 mm
Half-Bridge
1700 V
310 A
4.29 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
62 mm
Half-Bridge
1200 V
350 A
4 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
62 mm
Half-Bridge
1200 V
350 A
4 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
HAS350M12BM3
Coming
Soon
62 mm
Half-Bridge
1200 V
350 A
4 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
62 mm
Half-Bridge
1200 V
400 A
3.25 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm
62 mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS
150 °C
105 x 62 x 31 mm
62 mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
62 mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
HAS530M12BM3
Coming
Soon
62 mm
Half-Bridge
1200 V
530 A
2.67 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm

HM Silicon Carbide Power Module Family

HM Silicon Carbide Power Module Family

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RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
HM
Half-Bridge Right GK for Paralleling
1200 V
1.33 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
HM
Half-Bridge Rectifier
1200 V
600 A
Gen 6
175 °C
110 mm x 65 mm x 12.2 mm
HM
Half-Bridge Rectifier
1700 V
600 A
Gen 6
175 °C
110 mm x 65 mm x 12.2 mm
HM
Half-Bridge
1700 V
500 A
2.5 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
HM
Half-Bridge
1700 V
650 A
1.67 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
HM
Half-Bridge
1700 V
380 A
3.3 mΩ
Gen 3 MOS + Diodes
175 °C
110 mm x 65 mm x 12.2 mm
HM
Half-Bridge
1200 V
760 A
1.33 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
HM
Half-Bridge
1200 V
480 A
2.29 mΩ
Gen 3 MOS + Diodes
175 °C
110 mm x 65 mm x 12.2 mm

1200V Discrete Silicon Carbide MOSFETs for UPS

1200V Discrete Silicon Carbide MOSFETs for UPS

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1200V Discrete Silicon Carbide MOSFETs for UPS

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Data Sheet
CAD Model
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
1200 V
75 mΩ
Gen 3
30 A
51 nC
58 pF
113.6 W
150 °C
TO-263-7
1200 V
75 mΩ
Gen 3
30 A
54 nC
58 pF
113.6 W
150 °C
TO-247-3
1200 V
75 mΩ
Gen 3
32 A
57 nC
58 pF
145 W
175 °C
TO-247-3
1200 V
75 mΩ
Gen 3
32 A
55 nC
58 pF
145 W
175 °C
TO-247-4
1200 V
32 mΩ
Gen 3
63 A
118 nC
129 pF
283 W
175 °C
TO-247-4
1200 V
32 mΩ
Gen 3
63 A
114 nC
129 pF
283 W
175 °C
TO-247-3
1200 V
40 mΩ
Gen 3
64 A
61 nC
94 pF
272 W
150 °C
TO-263-7
1200 V
40 mΩ
Gen 3
66 A
99 nC
103 pF
326 W
175 °C
TO-247-4
1200 V
40 mΩ
Gen 3
66 A
101 nC
103 pF
326 W
175 °C
TO-247-3
1200 V
32 mΩ
Gen 3
68 A
111 nC
133 pF
277 W
150 °C
TO-263-7
1200 V
21 mΩ
Gen 3
81 A
160 nC
180 pF
469 W
175 °C
TO-247-3
1200 V
21 mΩ
Gen 3
100 A
162 nC
180 pF
469 W
175 °C
TO-247-4
1200 V
16 mΩ
Gen 3
115 A
211 nC
230 pF
556 W
175 °C
TO-247-4
1200 V
16 mΩ
Gen 3
115 A
207 nC
230 pF
556 W
175 °C
TO-247-3

1200V Discrete Silicon Carbide Schottky Diodes for UPS

1200V Discrete Silicon Carbide Schottky Diodes for UPS

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1200V Discrete Silicon Carbide Schottky Diodes for UPS

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Data Sheet
CAD Model
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
1200 V
10 A
Gen 4
1.5 V
10 A
52 nC
136 W
TO-220-2
1200 V
10 A
Gen 4
1.4 V
10 A
54 nC
187 W
TO-247-3
1200 V
10 A
Gen 4
1.5 V
10 A
52 nC per leg
170 W
TO-252-2
1200 V
10 A
Gen 4
1.4 V
10 A
52 nC
136 W
TO-247-2
1200 V
15 A
Gen 4
1.6 V
15 A
77.5 nC
192 W
TO-220-2
1200 V
15 A
Gen 4
1.5 V
15 A
37 nC per leg
270 W
TO-247-3
1200 V
15 A
Gen 4
1.5 V
15 A
77.5 nC
174.5 W
TO-247-2
1200 V
20 A
Gen 4
1.5 V
20 A
99 nC
242 W
TO-220-2
1200 V
20 A
Gen 4
1.5 V per leg
20 A
52 nC per leg
352 W
TO-247-3
1200 V
20 A
Gen 4
1.5 V
20 A
99 nC
246 W
TO-247-2
1200 V
30 A
Gen 4
1.6 V per leg
30 A
77.5 nC per leg
440 W
TO-247-3