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An electrician works on low voltage cabinet representing how Wolfspeed’s MOSFETs and diodes pack more backup power into a single enclosure.
Industrial

Uninterruptible Power Supplies

Future-proof your next UPS with Wolfspeed’s next-gen wide bandgap SiC semiconductors.

  • Overview
  • Products
  • Reference Designs
  • Overview
  • Products
  • Reference Designs

Improved Reliability, Cleaner Power from Wolfspeed Silicon Carbide

For mission-critical systems, a power loss can be truly catastrophic, and having a reliable backup power source is absolutely essential.

At one end of the spectrum is a simple standby battery backup that powers a home computer long enough to enable a safe shutdown. At the other end are complex, mission-critical IT systems that require customized, redundant, double-conversion uninterruptible power supply (UPS) technologies that convert AC from the grid to an DC source that keeps the batteries charged. That DC source is also converted back to AC to power 100% of the system, allowing for zero transfer time during an interruption, and since the DC source is isolated from the grid the AC signal is clean and immune from any grid instability.

Example of Wolfspeed's CRD-22AD12N reference design.
Wolfspeed's 22kW Bi-directional High Efficiency Active Front End (AFE) Converter Reference Design

Solutions for UPS Design

UPS systems need to be able to provide reliable, clean power at any moment — and every percent of efficiency improvement means longer backup time. Wolfspeed’s Silicon Carbide MOSFETs and Schottky diodes enable 30% lower losses, has 15% system cost saving, and up to 50% higher power density than their silicon counterparts. The results are UPS systems that you can rely on when you need them the most, packing more backup power into a single enclosure, or into smaller and lighter systems for space-constrained environments.

The Numbers are on Your Side.

Wolfspeed Silicon Carbide is uniquely capable of incredible reliability and efficiency, even in the most demanding power applications.

Up To
30%
Lower Losses
Up To
50%
Higher Power Density
Up To
15%
System Cost Savings

Wolfspeed Silicon Carbide Components for UPS Systems

UPS systems must often deliver high currents with pin-point precision at a moment’s notice. That’s no easy task, but Wolfspeed’s Silicon Carbide MOSFET and Schottky diode products are up for the challenge.

XM3 Half-Bridge Silicon Carbide Power Module Family

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XM3 Half-Bridge Silicon Carbide Power Module Family

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Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Tjmax
Module Size
View Product
CAB320M17XM3
XM
Half-Bridge
1700 V
320 A
3.5 mΩ
Gen 3
175 °C
80 x 53 x 19 mm
CAB400M12XM3
XM
Half-Bridge
1200 V
400 A
4 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
CAB425M12XM3
XM
Half-Bridge
1200 V
425 A
3.2 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
CAB450M12XM3
XM
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
EAB450M12XM3
XM
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
CAB525F12XM3
New
XM
Half-Bridge
1200 V
525 A
2.6 mΩ
Gen 3
175 °C
80 x 53 x 23.3 mm

End of Section

Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family

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Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family

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Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Tjmax
Module Size
View Product
CAB004M12GM4
New
GM
Half-Bridge
1200 V
200 A
4 mΩ
Gen 4
175 °C
62.8 x 56.7 mm
CAB004M12GM4T
New
GM
Half-Bridge
1200 V
200 A
4 mΩ
Gen 4
175 °C
62.8 x 56.7 mm
CAB5R0A23GM4
New
GM
Half Bridge (AlN substrate)
2300 V
200 A
5 mΩ
Gen 4 MOS
150 °C
62.8 x 56.7 mm
CAB5R0A23GM4T
New
GM
Half Bridge (AlN substrate)
2300 V
200 A
5 mΩ
Gen 4 MOS
150 °C
62.8 x 56.7 mm
CAB006M12GM3
GM
Half-Bridge
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 x 56.7 mm
CAB006A12GM3
GM
Half Bridge (AlN substrate)
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 x 56.7 mm
CAB006M12GM3T
GM
Half-Bridge
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 x 56.7 mm
CAB006A12GM3T
GM
Half Bridge (AlN substrate)
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 x 56.7 mm
CAB6R0A23GM4
New
GM
Half Bridge (AlN substrate)
2300 V
200 A
6 mΩ
Gen 4 MOS
150 °C
62.8 x 56.7 mm
CAB6R0A23GM4T
New
GM
Half Bridge (AlN substrate)
2300 V
200 A
6 mΩ
Gen 4 MOS
150 °C
62.8 x 56.7 mm
CAB7R5A23GM4
New
GM
Half Bridge (AlN substrate)
2300 V
170 A
7.5 mΩ
Gen 4 MOS
150 °C
62.8 x 56.7 mm
CAB7R5A23GM4T
New
GM
Half Bridge (AlN substrate)
2300 V
170 A
7.5 mΩ
Gen 4 MOS
150 °C
62.8 x 56.7 mm
CAB008A12GM3
GM
Half Bridge (AlN substrate)
1200 V
181 A
8 mΩ
Gen 3 MOS
150 °C
62.8 x 56.7 mm
CAB008M12GM3
GM
Half-Bridge
1200 V
160 A
8 mΩ
Gen 3 MOS
150 °C
62.8 x 56.7 mm
CAB008M12GM3T
GM
Half-Bridge
1200 V
160 A
8 mΩ
Gen 3 MOS
150 °C
62.8 x 56.7 mm
CAB008A12GM3T
GM
Half Bridge (AlN substrate)
1200 V
181 A
8 mΩ
Gen 3 MOS
150 °C
62.8 x 56.7 mm
CAB011M12FM3
FM
Half-Bridge
1200 V
117 A
11 mΩ
Gen 3 MOS
150 °C
62.8 x 33.8 mm
CAB011M12FM3T
FM
Half-Bridge
1200 V
117 A
11 mΩ
Gen 3 MOS
150 °C
62.8 x 33.8 mm
CAB011A12GM3
GM
Half-Bridge
1200 V
141 A
11 mΩ
Gen 3 MOS
150 °C
62.8 x 56.7 mm
CAB011A12GM3T
GM
Half-Bridge
1200 V
141 A
11 mΩ
Gen 3 MOS
150 °C
62.8 x 56.7 mm
CBB011M12GM4
New
GM
Full-Bridge
1200 V
100 A
11 mΩ
Gen 4
175 °C
62.8 x 56.7 mm
CBB011M12GM4T
New
GM
Full-Bridge
1200 V
100 A
11 mΩ
Gen 4
175 °C
62.8 x 56.7 mm
CHB011M12GM4
New
GM
T-Type
1200 V
100 A
11 mΩ
Gen 4
175 °C
62.8 x 56.7 mm
CHB011M12GM4T
New
GM
T-Type
1200 V
100 A
11 mΩ
Gen 4
175 °C
62.8 x 56.7 mm
CAB016M12FM3
FM
Half-Bridge
1200 V
84 A
16 mΩ
Gen 3 MOS
150 °C
62.8 x 33.8 mm
CAB016M12FM3T
FM
Half-Bridge
1200 V
84 A
16 mΩ
Gen 3 MOS
150 °C
62.8 x 33.8 mm
CCB016M12GM3
GM
Six-pack (three-phase)
1200 V
50 A
16 mΩ
Gen 3 MOS
150 °C
62.8 x 56.7 mm
CCB016M12GM3T
GM
Six-pack (three-phase)
1200 V
50 A
16 mΩ
Gen 3 MOS
150 °C
62.8 x 56.7 mm
CCB021M12FM3
FM
Six-pack (three-phase)
1200 V
30 A
21 mΩ
Gen 3 MOS
150 °C
62.8 x 33.8 mm
CBB021M12FM3
FM
Full-Bridge
1200 V
48 A
21 mΩ
Gen 3 MOS
150 °C
62.8 x 33.8 mm
CCB021M12FM3T
FM
Six-pack (three-phase)
1200 V
30 A
21 mΩ
Gen 3 MOS
150 °C
62.8 x 33.8 mm
CBB021M12FM3T
FM
Full-Bridge
1200 V
48 A
21 mΩ
Gen 3 MOS
150 °C
62.8 x 33.8 mm
CCB032M12FM3
FM
Six-pack (three-phase)
1200 V
30 A
32 mΩ
Gen 3 MOS
150 °C
62.8 x 33.8 mm
CBB032M12FM3
FM
Full-Bridge
1200 V
37 A
32 mΩ
Gen 3 MOS
150 °C
62.8 x 33.8 mm
CCB032M12FM3T
FM
Six-pack (three-phase)
1200 V
30 A
32 mΩ
Gen 3 MOS
150 °C
62.8 x 33.8 mm
CBB032M12FM3T
FM
Full-Bridge
1200 V
37 A
32 mΩ
Gen 3 MOS
150 °C
62.8 x 33.8 mm

End of Section

62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

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62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

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Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Tjmax
Module Size
View Product
WAS175M12BM3
62 mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
CAS175M12BM3
62 mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
HAS175M12BM3
62 mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
CAS310M17BM3
62 mm
Half-Bridge
1700 V
310 A
4.29 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
WAS310M17BM3
62 mm
Half-Bridge
1700 V
310 A
4.29 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
HAS310M17BM3
62 mm
Half-Bridge
1700 V
310 A
4.29 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
WAS350M12BM3
62 mm
Half-Bridge
1200 V
350 A
4 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
CAS350M12BM3
62 mm
Half-Bridge
1200 V
350 A
4 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
HAS350M12BM3
62 mm
Half-Bridge
1200 V
350 A
4 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
CAB530M12BM3
62 mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS
150 °C
105 x 62 x 31 mm
WAS530M12BM3
62 mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
CAS530M12BM3
62 mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
HAS530M12BM3
62 mm
Half-Bridge
1200 V
530 A
2.67 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm

End of Section

HM Silicon Carbide Power Module Family

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HM Silicon Carbide Power Module Family

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Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Tjmax
Module Size
View Product
CAS480M12HM3
HM
Half-Bridge
1200 V
480 A
2.29 mΩ
Gen 3 MOS + Diodes
175 °C
110 x 65 x 12.2 mm
CAB760M12HM3
HM
Half-Bridge
1200 V
760 A
1.33 mΩ
Gen 3 MOS
175 °C
110 x 65 x 12.2 mm
CAS380M17HM3
HM
Half-Bridge
1700 V
380 A
3.3 mΩ
Gen 3 MOS + Diodes
175 °C
110 x 65 x 12.2 mm
CAB650M17HM3
HM
Half-Bridge
1700 V
650 A
1.67 mΩ
Gen 3 MOS
175 °C
110 x 65 x 12.2 mm
CAB500M17HM3
HM
Half-Bridge
1700 V
500 A
2.5 mΩ
Gen 3 MOS
175 °C
110 x 65 x 12.2 mm
CAR600M17HN6
HM
Half-Bridge Rectifier
1700 V
600 A
Gen 6
175 °C
110 x 65 x 12.2 mm
CAR600M12HN6
HM
Half-Bridge Rectifier
1200 V
600 A
Gen 6
175 °C
110 x 65 x 12.2 mm
CAB760M12HM3R
HM
Half-Bridge Right GK for Paralleling
1200 V
1.33 mΩ
Gen 3 MOS
175 °C
110 x 65 x 12.2 mm

End of Section

1200V Discrete Silicon Carbide MOSFETs for UPS

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1200V Discrete Silicon Carbide MOSFETs for UPS

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Data Sheet
CAD Model
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Tjmax
Package
C3M0075120J
1200 V
75 mΩ
Gen 3
30 A
51 nC
58 pF
113.6 W
150 °C
TO-263-7
C3M0075120D
1200 V
75 mΩ
Gen 3
30 A
54 nC
58 pF
113.6 W
150 °C
TO-247-3
E3M0075120D
1200 V
75 mΩ
Gen 3
32 A
57 nC
58 pF
145 W
175 °C
TO-247-3
E3M0075120K
1200 V
75 mΩ
Gen 3
32 A
55 nC
58 pF
145 W
175 °C
TO-247-4
C3M0032120K
1200 V
32 mΩ
Gen 3
63 A
118 nC
129 pF
283 W
175 °C
TO-247-4
C3M0032120D
1200 V
32 mΩ
Gen 3
63 A
114 nC
129 pF
283 W
175 °C
TO-247-3
C3M0040120J1
1200 V
40 mΩ
Gen 3
64 A
61 nC
94 pF
272 W
150 °C
TO-263-7 XL
C3M0040120K
1200 V
40 mΩ
Gen 3
66 A
99 nC
103 pF
326 W
175 °C
TO-247-4
C3M0040120D
1200 V
40 mΩ
Gen 3
66 A
101 nC
103 pF
326 W
175 °C
TO-247-3
C3M0032120J1
1200 V
32 mΩ
Gen 3
68 A
111 nC
133 pF
277 W
150 °C
TO-263-7 XL
C3M0021120D
1200 V
21 mΩ
Gen 3
81 A
160 nC
180 pF
469 W
175 °C
TO-247-3
C3M0021120K
1200 V
21 mΩ
Gen 3
100 A
162 nC
180 pF
469 W
175 °C
TO-247-4
C3M0016120K
1200 V
16 mΩ
Gen 3
115 A
211 nC
230 pF
556 W
175 °C
TO-247-4
C3M0016120D
1200 V
16 mΩ
Gen 3
115 A
207 nC
230 pF
556 W
175 °C
TO-247-3

End of Section

1200V Discrete Silicon Carbide Schottky Diodes for UPS

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1200V Discrete Silicon Carbide Schottky Diodes for UPS

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Data Sheet
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Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
C4D10120A
1200 V
10 A
Gen 4
1.5 V
10 A
52 nC
136 W
TO-220-2
C4D10120D
1200 V
10 A
Gen 4
1.4 V
10 A
54 nC
187 W
TO-247-3
C4D10120E
1200 V
10 A
Gen 4
1.5 V
10 A
52 nC per leg
170 W
TO-252-2
C4D10120H
1200 V
10 A
Gen 4
1.4 V
10 A
52 nC
136 W
TO-247-2
C4D15120A
1200 V
15 A
Gen 4
1.6 V
15 A
77.5 nC
192 W
TO-220-2
C4D15120D
1200 V
15 A
Gen 4
1.5 V
15 A
37 nC per leg
270 W
TO-247-3
C4D15120H
1200 V
15 A
Gen 4
1.5 V
15 A
77.5 nC
174.5 W
TO-247-2
C4D20120A
1200 V
20 A
Gen 4
1.5 V
20 A
99 nC
242 W
TO-220-2
C4D20120D
1200 V
20 A
Gen 4
1.5 V per leg
20 A
52 nC per leg
352 W
TO-247-3
C4D20120H
1200 V
20 A
Gen 4
1.5 V
20 A
99 nC
246 W
TO-247-2
C4D30120D
1200 V
30 A
Gen 4
1.6 V per leg
30 A
77.5 nC per leg
440 W
TO-247-3
C4D40120D
1200 V
40 A
Gen 4
1.5 V per leg
40 A
99 nC per leg
532 W
TO-247-3

End of Section

650V Discrete Silicon Carbide MOSFETs for UPS

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650V Discrete Silicon Carbide MOSFETs for UPS

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650V Discrete Silicon Carbide MOSFETs for UPS

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Data Sheet
CAD Model
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Tjmax
Package
C3M0120065J
650 V
120 mΩ
Gen 3
21 A
26 nC
45 pF
86 W
175 °C
TO-263-7
C3M0120065L
650 V
120 mΩ
Gen 3
21 A
26 nC
45 pF
86 W
175 °C
TOLL
C3M0120065D
650 V
120 mΩ
Gen 3
22 A
28 nC
45 pF
98 W
175 °C
TO-247-3
C3M0120065K
650 V
120 mΩ
Gen 3
22 A
28 nC
45 pF
98 W
175 °C
TO-247-4
C3M0060065D
650 V
60 mΩ
Gen 3
29 A
46 nC
80 pF
150 W
175 °C
TO-247-3
C3M0060065J
650 V
60 mΩ
Gen 3
36 A
46 nC
80 pF
136 W
175 °C
TO-263-7
C3M0060065K
650 V
60 mΩ
Gen 3
37 A
46 nC
80 pF
150 W
175 °C
TO-247-4
C3M0060065L
650 V
60 mΩ
Gen 3
39 A
46 nC
72 pF
131 W
175 °C
TOLL
C3M0045065J1
650 V
45 mΩ
Gen 3
47 A
61 nC
101 pF
147 W
175 °C
TO-263-7 XL
C3M0045065D
650 V
45 mΩ
Gen 3
49 A
63 nC
101 pF
176 W
175 °C
TO-247-3
C3M0045065K
650 V
45 mΩ
Gen 3
49 A
63 nC
101 pF
176 W
175 °C
TO-247-4
C3M0045065L
650 V
45 mΩ
Gen 3
49 A
59 nC
101 pF
164 W
175 °C
TOLL
C3M0025065L
650 V
25 mΩ
Gen 3
77 A
111 nC
186 pF
326 W
175 °C
TOLL
C3M0025065J1
650 V
25 mΩ
Gen 3
80 A
109 nC
178 pF
271 W
175 °C
TO-263-7 XL
C3M0025065D
650 V
25 mΩ
Gen 3
97 A
108 nC
178 pF
325 W
175 °C
TO-247-3
C3M0025065K
650 V
25 mΩ
Gen 3
97 A
112 nC
178 pF
326 W
175 °C
TO-247-4
C3M0015065D
650 V
15 mΩ
Gen 3
120 A
188 nC
289 pF
416 W
175 °C
TO-247-3
C3M0015065K
650 V
15 mΩ
Gen 3
120 A
188 nC
289 pF
416 W
175 °C
TO-247-4

End of Section

650V Discrete Silicon Carbide Schottky Diodes for UPS

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650V Discrete Silicon Carbide Schottky Diodes for UPS

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Data Sheet
CAD Model
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
C6D04065E
650 V
4 A
Gen 6
1.27 V
4 A
16 nC
52 W
TO-252-2
C6D04065A
650 V
4 A
Gen 6
1.27 V
4 A
16 nC
73 W
TO-220-2
C6D06065E
650 V
6 A
Gen 6
1.27 V
6 A
23 nC
68 W
TO-252-2
C6D06065A
650 V
6 A
Gen 6
1.27 V
6 A
23 nC
73 W
TO-220-2
C6D06065Q
650 V
6 A
Gen 6
1.27 V
6 A
23 nC
69 W
QFN 8x8
C6D08065E
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
85 W
TO-252-2
C6D08065A
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
92.6 W
TO-220-2
C6D08065Q
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
92 W
QFN 8x8
C6D10065E
650 V
10 A
Gen 6
1.27 V
10 A
34 nC
99 W
TO-252-2
C6D10065A
650 V
10 A
Gen 6
1.27 V
10 A
35 nC
109 W
TO-220-2
C6D10065Q
650 V
10 A
Gen 6
1.27 V
10 A
34 nC
119 W
QFN 8x8
C6D16065D
650 V
16 A
Gen 6
1.27 V
16 A
29 nC
100 W
TO-247-3
C6D20065D
650 V
20 A
Gen 6
1.27 V
20 A
35 nC
116 W
TO-247-3

End of Section

Reference Designs to Accelerate Your Time to Market

Wolfspeed not only offers the solutions to bring your design into the future of automotive technology, but our Reference Designs can help you accelerate your design cycle process. Reference Designs include full system design resource package with schematics, BOM, and more.

Featured Reference Designs for Uninterruptible Power Supplies

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Featured Reference Designs for Uninterruptible Power Supplies

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Featured Reference Designs for Uninterruptible Power Supplies - Filter By

Featured Reference Designs for Uninterruptible Power Supplies

Product SKU
Name
Buy Online
Type
Topology
Power
Discrete/Module
Package
Device SKU(s)
Designed By
View Product
CRD-06600DD065N
6.6 kW High Frequency LLC
DC to DC
LLC
6.6kW
Discrete
TO-247-3
C3M0060065D
C6D10065A
Wolfspeed
CRD-22DD12N
22 kW Bi-Directional CLLC
DC to DC
CLLC
22kW
Discrete
TO-247-4
C3M0032120K
E3M0032120K
Wolfspeed
CRD200DA12E-XM3
200 kW XM3 Three-Phase Inverter
DC to AC
Three-Phase, 2-Level
200kW
Module
XM
CAB400M12XM3
CGD12HBXMP
Wolfspeed
CRD250DA12E-XM3
250 kW XM3 Three-Phase Inverter
DC to AC
Three-Phase, 2-Level
250kW
Module
XM
CAB425M12XM3
CGD12HBXMP
Wolfspeed
CRD300DA12E-XM3
300 kW XM3 Three-Phase Inverter
DC to AC
Three-Phase, 2-Level
300kW
Module
XM
CAB450M12XM3
CGD12HBXMP
Wolfspeed
CRD600DA12E-XM3
600 kW XM3 High Performance Dual Three-Phase Inverter
DC to AC
Dual Three-Phase, 2-Level
600kW
Module
XM
CAB450M12XM3
CGD12HBXMP
Wolfspeed

End of Section

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