An electrician works on low voltage cabinet representing how Wolfspeed’s MOSFETs and diodes pack more backup power into a single enclosure.

Industrial

Uninterruptible Power Supplies

Future-proof your next UPS with Wolfspeed’s next-gen wide bandgap SiC semiconductors.

Improved Reliability, Cleaner Power from Wolfspeed Silicon Carbide

For mission-critical systems, a power loss can be truly catastrophic, and having a reliable backup power source is absolutely essential.

At one end of the spectrum is a simple standby battery backup that powers a home computer long enough to enable a safe shutdown. At the other end are complex, mission-critical IT systems that require customized, redundant, double-conversion uninterruptible power supply (UPS) technologies that convert AC from the grid to an DC source that keeps the batteries charged. That DC source is also converted back to AC to power 100% of the system, allowing for zero transfer time during an interruption, and since the DC source is isolated from the grid the AC signal is clean and immune from any grid instability.

Wolfspeed's 22kW Bi-directional High Efficiency Active Front End (AFE) Converter Reference Design

Example of Wolfspeed's CRD-22AD12N reference design. — Wolfspeed's 22kW Bi-directional High Efficiency Active Front End (AFE) Converter Reference Design

Solutions for UPS Design

UPS systems need to be able to provide reliable, clean power at any moment — and every percent of efficiency improvement means longer backup time. Wolfspeed’s Silicon Carbide MOSFETs and Schottky diodes enable 30% lower losses, has 15% system cost saving, and up to 50% higher power density than their silicon counterparts. The results are UPS systems that you can rely on when you need them the most, packing more backup power into a single enclosure, or into smaller and lighter systems for space-constrained environments.

The Numbers are on Your Side.

Wolfspeed Silicon Carbide is uniquely capable of incredible reliability and efficiency, even in the most demanding power applications.

Up To

30%

Lower Losses

Up To

50%

Higher Power Density

Up To

15%

System Cost Savings

Wolfspeed Silicon Carbide Components for UPS Systems

UPS systems must often deliver high currents with pin-point precision at a moment’s notice. That’s no easy task, but Wolfspeed’s Silicon Carbide MOSFET and Schottky diode products are up for the challenge.

XM3 Half-Bridge Silicon Carbide Power Module Family

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XM3 Half-Bridge Silicon Carbide Power Module Family

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XM3 Half-Bridge Silicon Carbide Power Module Family

Product SKU	Package	Configuration	Blocking Voltage	Current Rating	R_DS(ON) at 25°C	Generation	Maximum Junction Temperature	Module Size
CAB320M17XM3 New	XM3	Half-Bridge	1700 V	320 A	3.5 mΩ	Gen 3	175 °C	80 x 53 x 19 mm
CAB400M12XM3	XM3	Half-Bridge	1200 V	400 A	4 mΩ	Gen 3 MOS	175 °C	80 x 53 x 19 mm
CAB425M12XM3	XM3	Half-Bridge	1200 V	425 A	3.2 mΩ	Gen 3 MOS	175 °C	80 x 53 x 19 mm
CAB450M12XM3	XM3	Half-Bridge	1200 V	450 A	2.6 mΩ	Gen 3 MOS	175 °C	80 x 53 x 19 mm
EAB450M12XM3	XM3	Half-Bridge	1200 V	450 A	2.6 mΩ	Gen 3 MOS	175 °C	80 x 53 x 19 mm

Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family

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Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family

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Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family

Product SKU	Package	Configuration	Blocking Voltage	Current Rating	R_DS(ON) at 25°C	Generation	Maximum Junction Temperature	Module Size
CAB006M12GM3	GM3	Half-Bridge	1200 V	200 A	6 mΩ	Gen 3 MOS	150 °C	62.8 mm x 56.7 mm
CAB006A12GM3	GM3	Half Bridge (AlN substrate)	1200 V	200 A	6 mΩ	Gen 3 MOS	150 °C	62.8 mm x 56.7 mm
CAB006M12GM3T New	GM3	Half-Bridge	1200 V	200 A	6 mΩ	Gen 3 MOS	150 °C	62.8 mm x 56.7 mm
CAB006A12GM3T New	GM3	Half Bridge (AlN substrate)	1200 V	200 A	6 mΩ	Gen 3 MOS	150 °C	62.8 mm x 56.7 mm
CAB008A12GM3	GM3	Half Bridge (AlN substrate)	1200 V	181 A	8 mΩ	Gen 3 MOS	150 °C	62.8 mm x 56.7 mm
CAB008M12GM3	GM3	Half-Bridge	1200 V	160 A	8 mΩ	Gen 3 MOS	150 °C	62.8 mm x 56.7 mm
CAB008M12GM3T New	GM3	Half-Bridge	1200 V	160 A	8 mΩ	Gen 3 MOS	150 °C	62.8 mm x 56.7 mm
CAB008A12GM3T New	GM3	Half Bridge (AlN substrate)	1200 V	181 A	8 mΩ	Gen 3 MOS	150 °C	62.8 mm x 56.7 mm
CAB011M12FM3	FM3	Half-Bridge	1200 V	117 A	11 mΩ	Gen 3 MOS	150 °C	62.8 mm x 33.8 mm
CAB011M12FM3T New	FM3	Half-Bridge	1200 V	117 A	11 mΩ	Gen 3 MOS	150 °C	62.8 mm x 33.8 mm
CAB011A12GM3	GM3	Half-Bridge	1200 V	141 A	11 mΩ	Gen 3 MOS	150 °C	62.8 mm x 56.7 mm
CAB011A12GM3T New	GM3	Half-Bridge	1200 V	141 A	11 mΩ	Gen 3 MOS	150 °C	62.8 mm x 56.7 mm
CAB016M12FM3	FM3	Half-Bridge	1200 V	84 A	16 mΩ	Gen 3 MOS	150 °C	62.8 mm x 33.8 mm
CAB016M12FM3T New	FM3	Half-Bridge	1200 V	84 A	16 mΩ	Gen 3 MOS	150 °C	62.8 mm x 33.8 mm
CCB016M12GM3	GM3	Six-pack (three-phase)	1200 V	50 A	16 mΩ	Gen 3 MOS	150 °C	62.8 mm x 56.7 mm
CCB016M12GM3T New	GM3	Six-pack (three-phase)	1200 V	50 A	16 mΩ	Gen 3 MOS	150 °C	62.8 mm x 56.7 mm
CCB021M12FM3	FM3	Six-pack (three-phase)	1200 V	30 A	21 mΩ	Gen 3 MOS	150 °C	62.8 mm x 33.8 mm
CBB021M12FM3 New	FM3	Full-Bridge	1200 V	48 A	21 mΩ	Gen 3 MOS	150 °C	62.8 mm x 33.8 mm
CCB021M12FM3T New	FM3	Six-pack (three-phase)	1200 V	30 A	21 mΩ	Gen 3	150 °C	62.8 mm x 33.8 mm
CBB021M12FM3T New	FM3	Full-Bridge	1200 V	48 A	21 mΩ	Gen 3 MOS	150 °C	62.8 mm x 33.8 mm
CCB032M12FM3	FM3	Six-pack (three-phase)	1200 V	30 A	32 mΩ	Gen 3 MOS	150 °C	62.8 mm x 33.8 mm
CBB032M12FM3 New	FM3	Full-Bridge	1200 V	37 A	32 mΩ	Gen 3 MOS	150 °C	62.8 mm x 33.8 mm
CCB032M12FM3T New	FM3	Six-pack (three-phase)	1200 V	30 A	32 mΩ	Gen 3 MOS	150 °C	62.8 mm x 33.8 mm
CBB032M12FM3T New	FM3	Full-Bridge	1200 V	37 A	32 mΩ	Gen 3 MOS	150 °C	62.8 mm x 33.8 mm

62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

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62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

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62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

Product SKU	Package	Configuration	Blocking Voltage	Current Rating	R_DS(ON) at 25°C	Generation	Maximum Junction Temperature	Module Size
WAS175M12BM3	62mm	Half-Bridge	1200 V	175 A	8 mΩ	Gen 3 MOS + Diodes	150 °C	105 x 62 x 31 mm
CAS175M12BM3	62mm	Half-Bridge	1200 V	175 A	8 mΩ	Gen 3 MOS + Diodes	150 °C	105 x 62 x 31 mm
WAB300M12BM3	62mm	Half-Bridge	1200 V	300 A	4 mΩ	Gen 3 MOS	175 °C	105 x 62 x 31 mm
CAS310M17BM3	62mm	Half-Bridge	1700 V	310 A	4.29 mΩ	Gen 3 MOS + Diodes	150 °C	105 x 62 x 31 mm
WAS310M17BM3 New	62mm	Half-Bridge	1700 V	310 A	4.29 mΩ	Gen 3 MOS + Diodes	150 °C	105 x 62 x 31 mm
WAS350M12BM3	62mm	Half-Bridge	1200 V	350 A	4 mΩ	Gen 3 MOS + Diodes	150 °C	105 x 62 x 31 mm
CAS350M12BM3	62mm	Half-Bridge	1200 V	350 A	4 mΩ	Gen 3 MOS + Diodes	150 °C	105 x 62 x 31 mm
WAB400M12BM3	62mm	Half-Bridge	1200 V	400 A	3.25 mΩ	Gen 3 MOS	175 °C	105 x 62 x 31 mm
CAB530M12BM3	62mm	Half-Bridge	1200 V	530 A	2.6 mΩ	Gen 3 MOS	150 °C	105 x 62 x 31 mm
WAS530M12BM3	62mm	Half-Bridge	1200 V	530 A	2.6 mΩ	Gen 3 MOS + Diodes	150 °C	105 x 62 x 31 mm
CAS530M12BM3	62mm	Half-Bridge	1200 V	530 A	2.6 mΩ	Gen 3 MOS + Diodes	150 °C	105 x 62 x 31 mm

HM Silicon Carbide Power Module Family

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HM Silicon Carbide Power Module Family

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HM Silicon Carbide Power Module Family

Product SKU	Package	Configuration	Blocking Voltage	Current Rating	R_DS(ON) at 25°C	Generation	Maximum Junction Temperature	Module Size
CAB760M12HM3R	HM High Performance 62 mm	Half-Bridge Right GK for Paralleling	1200 V		1.33 mΩ	Gen 3 MOS	175 °C	110 mm x 65 mm x 12.2 mm
CAR600M12HN6	HM High Performance 62 mm	Half-Bridge Rectifier	1200 V	600 A		Gen 6	175 °C	110 mm x 65 mm x 12.2 mm
CAR600M17HN6	HM High Performance 62 mm	Half-Bridge Rectifier	1700 V	600 A		Gen 6	175 °C	110 mm x 65 mm x 12.2 mm
CAB500M17HM3	HM High Performance 62 mm	Half-Bridge	1700 V	500 A	2.5 mΩ	Gen 3 MOS	175 °C	110 mm x 65 mm x 12.2 mm
CAB650M17HM3	HM High Performance 62 mm	Half-Bridge	1700 V	650 A	1.67 mΩ	Gen 3 MOS	175 °C	110 mm x 65 mm x 12.2 mm
CAS380M17HM3	HM High Performance 62 mm	Half-Bridge	1700 V	380 A	3.3 mΩ	Gen 3 MOS + Diodes	175 °C	110 mm x 65 mm x 12.2 mm
CAB760M12HM3	HM High Performance 62 mm	Half-Bridge	1200 V	760 A	1.33 mΩ	Gen 3 MOS	175 °C	110 mm x 65 mm x 12.2 mm
CAS480M12HM3	HM High Performance 62 mm	Half-Bridge	1200 V	480 A	2.29 mΩ	Gen 3 MOS + Diodes	175 °C	110 mm x 65 mm x 12.2 mm

1200V Discrete Silicon Carbide MOSFETs for UPS

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1200V Discrete Silicon Carbide MOSFETs for UPS

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1200V Discrete Silicon Carbide MOSFETs for UPS

Product SKU	Blocking Voltage	R_DS(ON) at 25°C	Generation	Current Rating	Gate Charge Total	Output Capacitance	Total Power Dissipation (P_TOT)	Maximum Junction Temperature	Package
C3M0075120J	1200 V	75 mΩ	Gen 3	30 A	51 nC	58 pF	113.6 W	150 °C	TO-263-7
C3M0075120D	1200 V	75 mΩ	Gen 3	30 A	54 nC	58 pF	113.6 W	150 °C	TO-247-3
E3M0075120D	1200 V	75 mΩ	Gen 3	32 A	57 nC	58 pF	145 W	175 °C	TO-247-3
E3M0075120K	1200 V	75 mΩ	Gen 3	32 A	55 nC	58 pF	145 W	175 °C	TO-247-4
C3M0032120K	1200 V	32 mΩ	Gen 3	63 A	118 nC	129 pF	283 W	175 °C	TO-247-4
C3M0032120D	1200 V	32 mΩ	Gen 3	63 A	114 nC	129 pF	283 W	175 °C	TO-247-3
C3M0040120J1	1200 V	40 mΩ	Gen 3	64 A	61 nC	94 pF	272 W	150 °C	TO-263-7
C3M0040120K	1200 V	40 mΩ	Gen 3	66 A	99 nC	103 pF	326 W	175 °C	TO-247-4
C3M0040120D	1200 V	40 mΩ	Gen 3	66 A	101 nC	103 pF	326 W	175 °C	TO-247-3
C3M0032120J1	1200 V	32 mΩ	Gen 3	68 A	111 nC	133 pF	277 W	150 °C	TO-263-7
C3M0021120D	1200 V	21 mΩ	Gen 3	81 A	160 nC	180 pF	469 W	175 °C	TO-247-3
C3M0021120K	1200 V	21 mΩ	Gen 3	100 A	162 nC	180 pF	469 W	175 °C	TO-247-4
C3M0016120K	1200 V	16 mΩ	Gen 3	115 A	211 nC	230 pF	556 W	175 °C	TO-247-4
C3M0016120D	1200 V	16 mΩ	Gen 3	115 A	207 nC	230 pF	556 W	175 °C	TO-247-3

1200V Discrete Silicon Carbide Schottky Diodes for UPS

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1200V Discrete Silicon Carbide Schottky Diodes for UPS

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1200V Discrete Silicon Carbide Schottky Diodes for UPS

Product SKU	Blocking Voltage	Current Rating	Generation	Forward Voltage(V_F(type))	Maximum Continuous Current (IF)	Total Capacitive Charge (Q_C (typ))	Total Power Dissipation (P_TOT)	Package
C4D10120A	1200 V	10 A	Gen 4	1.5 V	10 A	52 nC	136 W	TO-220-2
C4D10120D	1200 V	10 A	Gen 4	1.4 V	10 A	54 nC	187 W	TO-247-3
C4D10120E	1200 V	10 A	Gen 4	1.5 V	10 A	52 nC per leg	170 W	TO-252-2
C4D10120H	1200 V	10 A	Gen 4	1.4 V	10 A	52 nC	136 W	TO-247-2
C4D15120A	1200 V	15 A	Gen 4	1.6 V	15 A	77.5 nC	192 W	TO-220-2
C4D15120D	1200 V	15 A	Gen 4	1.5 V	15 A	37 nC per leg	270 W	TO-247-3
C4D15120H	1200 V	15 A	Gen 4	1.5 V	15 A	77.5 nC	174.5 W	TO-247-2
C4D20120A	1200 V	20 A	Gen 4	1.5 V	20 A	99 nC	242 W	TO-220-2
C4D20120D	1200 V	20 A	Gen 4	1.5 V per leg	20 A	52 nC per leg	352 W	TO-247-3
C4D20120H	1200 V	20 A	Gen 4	1.5 V	20 A	99 nC	246 W	TO-247-2
C4D30120D	1200 V	30 A	Gen 4	1.6 V per leg	30 A	77.5 nC per leg	440 W	TO-247-3
C4D40120D	1200 V	40 A	Gen 4	1.5 V per leg	40 A	99 nC per leg	532 W	TO-247-3

650V Discrete Silicon Carbide MOSFETs for UPS

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650V Discrete Silicon Carbide MOSFETs for UPS

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650V Discrete Silicon Carbide MOSFETs for UPS

Product SKU	Buy Online	Request Sample	Data Sheet	CAD Model	Blocking Voltage	R_DS(ON) at 25°C	Generation	Current Rating	Gate Charge Total	Output Capacitance	Total Power Dissipation (P_TOT)