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An electrician works on low voltage cabinet representing how Wolfspeed’s MOSFETs and diodes pack more backup power into a single enclosure.
Industrial

Uninterruptible Power Supplies

Future-proof your next UPS with Wolfspeed’s next-gen wide bandgap SiC semiconductors.

Improved Reliability, Cleaner Power from Wolfspeed Silicon Carbide

For mission-critical systems, a power loss can be truly catastrophic, and having a reliable backup power source is absolutely essential.

At one end of the spectrum is a simple standby battery backup that powers a home computer long enough to enable a safe shutdown. At the other end are complex, mission-critical IT systems that require customized, redundant, double-conversion uninterruptible power supply (UPS) technologies that convert AC from the grid to an DC source that keeps the batteries charged. That DC source is also converted back to AC to power 100% of the system, allowing for zero transfer time during an interruption, and since the DC source is isolated from the grid the AC signal is clean and immune from any grid instability.

Solutions for UPS Design

UPS systems need to be able to provide reliable, clean power at any moment — and every percent of efficiency improvement means longer backup time. Wolfspeed’s Silicon Carbide MOSFETs and Schottky diodes enable 30% lower losses, has 15% system cost saving, and up to 50% higher power density than their silicon counterparts. The results are UPS systems that you can rely on when you need them the most, packing more backup power into a single enclosure, or into smaller and lighter systems for space-constrained environments.


The Numbers are on Your Side.

Wolfspeed Silicon Carbide is uniquely capable of incredible reliability and efficiency, even in the most demanding power applications.

Up To
30%
Lower Losses
Up To
50%
Higher Power Density
Up To
15%
System Cost Savings

Wolfspeed Silicon Carbide Components for UPS Systems

UPS systems must often deliver high currents with pin-point precision at a moment’s notice. That’s no easy task, but Wolfspeed’s Silicon Carbide MOSFET and Schottky diode products are up for the challenge.

XM3 Half-Bridge Silicon Carbide Power Module Family

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XM3 Half-Bridge Silicon Carbide Power Module Family

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XM3 Half-Bridge Silicon Carbide Power Module Family

Product SKU
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Data Sheet
CAD Model
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
CAB320M17XM3
XM3
Half-Bridge
1700 V
320 A
3.5 mΩ
Gen 3
175 °C
80 x 53 x 19 mm
XM3
Half-Bridge
1200 V
400 A
4 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
XM3
Half-Bridge
1200 V
425 A
3.2 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
XM3
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
XM3
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm

Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family

Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family

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Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family

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Request Sample
Data Sheet
CAD Model
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
GM3
Half-Bridge
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM3
Half Bridge (AlN substrate)
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM3
Half-Bridge
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM3
Half Bridge (AlN substrate)
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM3
Half Bridge (AlN substrate)
1200 V
181 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM3
Half-Bridge
1200 V
160 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM3
Half-Bridge
1200 V
160 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM3
Half Bridge (AlN substrate)
1200 V
181 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
FM3
Half-Bridge
1200 V
117 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM3
Half-Bridge
1200 V
117 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
GM3
Half-Bridge
1200 V
141 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB011A12GM3T
New
GM3
Half-Bridge
1200 V
141 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
FM3
Half-Bridge
1200 V
84 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM3
Half-Bridge
1200 V
84 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
GM3
Six-pack (three-phase)
1200 V
50 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM3
Six-pack (three-phase)
1200 V
50 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
FM3
Six-pack (three-phase)
1200 V
30 A
21 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM3
Full-Bridge
1200 V
48 A
21 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM3
Six-pack (three-phase)
1200 V
30 A
21 mΩ
Gen 3
150 °C
62.8 mm x 33.8 mm
FM3
Full-Bridge
1200 V
48 A
21 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM3
Six-pack (three-phase)
1200 V
30 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM3
Full-Bridge
1200 V
37 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM3
Six-pack (three-phase)
1200 V
30 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM3
Full-Bridge
1200 V
37 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm

62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

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62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

Product SKU
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Data Sheet
CAD Model
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
62mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
62mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
62mm
Half-Bridge
1200 V
300 A
4 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm
62mm
Half-Bridge
1700 V
310 A
4.29 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
62mm
Half-Bridge
1700 V
310 A
4.29 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
62mm
Half-Bridge
1200 V
350 A
4 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
62mm
Half-Bridge
1200 V
350 A
4 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
62mm
Half-Bridge
1200 V
400 A
3.25 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm
62mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS
150 °C
105 x 62 x 31 mm
62mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
62mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm

HM Silicon Carbide Power Module Family

HM Silicon Carbide Power Module Family

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HM Silicon Carbide Power Module Family

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Data Sheet
CAD Model
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
HM High Performance 62 mm
Half-Bridge Right GK for Paralleling
1200 V
1.33 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
HM High Performance 62 mm
Half-Bridge Rectifier
1200 V
600 A
Gen 6
175 °C
110 mm x 65 mm x 12.2 mm
HM High Performance 62 mm
Half-Bridge Rectifier
1700 V
600 A
Gen 6
175 °C
110 mm x 65 mm x 12.2 mm
HM High Performance 62 mm
Half-Bridge
1700 V
500 A
2.5 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
HM High Performance 62 mm
Half-Bridge
1700 V
650 A
1.67 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
HM High Performance 62 mm
Half-Bridge
1700 V
380 A
3.3 mΩ
Gen 3 MOS + Diodes
175 °C
110 mm x 65 mm x 12.2 mm
HM High Performance 62 mm
Half-Bridge
1200 V
760 A
1.33 mΩ
Gen 3 MOS
175 °C
110 mm x 65 mm x 12.2 mm
HM High Performance 62 mm
Half-Bridge
1200 V
480 A
2.29 mΩ
Gen 3 MOS + Diodes
175 °C
110 mm x 65 mm x 12.2 mm

1200V Discrete Silicon Carbide MOSFETs for UPS

1200V Discrete Silicon Carbide MOSFETs for UPS

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1200V Discrete Silicon Carbide MOSFETs for UPS

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
1200 V
75 mΩ
Gen 3
30 A
51 nC
58 pF
113.6 W
150 °C
TO-263-7
1200 V
75 mΩ
Gen 3
30 A
54 nC
58 pF
113.6 W
150 °C
TO-247-3
1200 V
75 mΩ
Gen 3
32 A
57 nC
58 pF
145 W
175 °C
TO-247-3
1200 V
75 mΩ
Gen 3
32 A
55 nC
58 pF
145 W
175 °C
TO-247-4
1200 V
32 mΩ
Gen 3
63 A
118 nC
129 pF
283 W
175 °C
TO-247-4
1200 V
32 mΩ
Gen 3
63 A
114 nC
129 pF
283 W
175 °C
TO-247-3
1200 V
40 mΩ
Gen 3
64 A
61 nC
94 pF
272 W
150 °C
TO-263-7
1200 V
40 mΩ
Gen 3
66 A
99 nC
103 pF
326 W
175 °C
TO-247-4
1200 V
40 mΩ
Gen 3
66 A
101 nC
103 pF
326 W
175 °C
TO-247-3
1200 V
32 mΩ
Gen 3
68 A
111 nC
133 pF
277 W
150 °C
TO-263-7
1200 V
21 mΩ
Gen 3
81 A
160 nC
180 pF
469 W
175 °C
TO-247-3
1200 V
21 mΩ
Gen 3
100 A
162 nC
180 pF
469 W
175 °C
TO-247-4
1200 V
16 mΩ
Gen 3
115 A
211 nC
230 pF
556 W
175 °C
TO-247-4
1200 V
16 mΩ
Gen 3
115 A
207 nC
230 pF
556 W
175 °C
TO-247-3

1200V Discrete Silicon Carbide Schottky Diodes for UPS

1200V Discrete Silicon Carbide Schottky Diodes for UPS

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1200V Discrete Silicon Carbide Schottky Diodes for UPS

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Request Sample
Data Sheet
CAD Model
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
1200 V
10 A
Gen 4
1.5 V
10 A
52 nC
136 W
TO-220-2
1200 V
10 A
Gen 4
1.4 V
10 A
54 nC
187 W
TO-247-3
1200 V
10 A
Gen 4
1.5 V
10 A
52 nC per leg
170 W
TO-252-2
1200 V
10 A
Gen 4
1.4 V
10 A
52 nC
136 W
TO-247-2
1200 V
15 A
Gen 4
1.6 V
15 A
77.5 nC
192 W
TO-220-2
1200 V
15 A
Gen 4
1.5 V
15 A
37 nC per leg
270 W
TO-247-3
1200 V
15 A
Gen 4
1.5 V
15 A
77.5 nC
174.5 W
TO-247-2
1200 V
20 A
Gen 4
1.5 V
20 A
99 nC
242 W
TO-220-2
1200 V
20 A
Gen 4
1.5 V per leg
20 A
52 nC per leg
352 W
TO-247-3
1200 V
20 A
Gen 4
1.5 V
20 A
99 nC
246 W
TO-247-2
1200 V
30 A
Gen 4
1.6 V per leg
30 A
77.5 nC per leg
440 W
TO-247-3
1200 V
40 A
Gen 4
1.5 V per leg
40 A
99 nC per leg
532 W
TO-247-3

650V Discrete Silicon Carbide MOSFETs for UPS

650V Discrete Silicon Carbide MOSFETs for UPS

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650V Discrete Silicon Carbide MOSFETs for UPS

Product SKU
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Request Sample
Data Sheet
CAD Model
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
650 V
120 mΩ
Gen 3
21 A
26 nC
45 pF
86 W
175 °C
TO-263-7
650 V
120 mΩ
Gen 3
21 A
26 nC
45 pF
86 W
175 °C
TOLL
650 V
120 mΩ
Gen 3
22 A
28 nC
45 pF
98 W
175 °C
TO-247-3
650 V
120 mΩ
Gen 3
22 A
28 nC
45 pF
98 W
175 °C
TO-247-4
650 V
60 mΩ
Gen 3
29 A
46 nC
80 pF
150 W
175 °C
TO-247-3
650 V
60 mΩ
Gen 3
36 A
46 nC
80 pF
136 W
175 °C
TO-263-7
650 V
60 mΩ
Gen 3
37 A
46 nC
80 pF
150 W
175 °C
TO-247-4
650 V
60 mΩ
Gen 3
39 A
46 nC
72 pF
131 W
175 °C
TOLL
650 V
45 mΩ
Gen 3
47 A
61 nC
101 pF
147 W
150 °C
TO-263-7
650 V
45 mΩ
Gen 3
49 A
63 nC
101 pF
176 W
175 °C
TO-247-3
650 V
45 mΩ
Gen 3
49 A
63 nC
101 pF
176 W
175 °C
TO-247-4
650 V
45 mΩ
Gen 3
49 A
59 nC
101 pF
164 W
175 °C
TOLL
650 V
25 mΩ
Gen 3
77 A
111 nC
186 pF
326 W
175 °C
TOLL
650 V
25 mΩ
Gen 3
80 A
109 nC
178 pF
271 W
150 °C
TO-263-7
650 V
25 mΩ
Gen 3
97 A
108 nC
178 pF
325 W
175 °C
TO-247-3
650 V
25 mΩ
Gen 3
97 A
112 nC
178 pF
326 W
175 °C
TO-247-4
650 V
15 mΩ
Gen 3
120 A
188 nC
289 pF
416 W
175 °C
TO-247-3
650 V
15 mΩ
Gen 3
120 A
188 nC
289 pF
416 W
175 °C
TO-247-4

650V Discrete Silicon Carbide Schottky Diodes for UPS

650V Discrete Silicon Carbide Schottky Diodes for UPS

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650V Discrete Silicon Carbide Schottky Diodes for UPS

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Buy Online
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Data Sheet
CAD Model
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
650 V
4 A
Gen 6
1.27 V
4 A
16 nC
52 W
TO-252-2
650 V
4 A
Gen 6
1.27 V
4 A
16 nC
73 W
TO-220-2
650 V
6 A
Gen 6
1.27 V
6 A
23 nC
68 W
TO-252-2
650 V
6 A
Gen 6
1.27 V
6 A
23 nC
73 W
TO-220-2
650 V
6 A
Gen 6
1.27 V
6 A
23 nC
69 W
QFN
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
85 W
TO-252-2
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
92.6 W
TO-220-2
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
92 W
QFN
650 V
10 A
Gen 6
1.27 V
10 A
34 nC
99 W
TO-252-2
650 V
10 A
Gen 6
1.27 V
10 A
35 nC
109 W
TO-220-2
650 V
10 A
Gen 6
1.27 V
10 A
34 nC
119 W
QFN
650 V
16 A
Gen 6
1.27 V
16 A
29 nC
100 W
TO-247-3
650 V
20 A
Gen 6
1.27 V
20 A
35 nC
116 W
TO-247-3

Reference Designs to Accelerate Your Time to Market

Wolfspeed not only offers the solutions to bring your design into the future of automotive technology, but our Reference Designs can help you accelerate your design cycle process. Reference Designs include full system design resource package with schematics, BOM, and more.

Featured Reference Designs for Uninterruptible Power Supplies

Featured Reference Designs for Uninterruptible Power Supplies

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Featured Reference Designs for Uninterruptible Power Supplies

Product SKU
Name
Buy Online
Type
Topology
Power
Discrete/Module
Package
Device SKU(s)
Designed By
View Product
CRD-06600DD065N
6.6 kW High Frequency LLC
DC to DC
LLC
6.6kW
Discrete
TO-247-3
Wolfspeed
CRD-22DD12N
22 kW Bi-Directional CLLC
DC to DC
CLLC
22kW
Discrete
TO-247-4
Wolfspeed
CRD200DA12E-XM3
200 kW XM3 Three-Phase Inverter
DC to AC
Three-Phase, 2-Level
200kW
Module
XM3
Wolfspeed
CRD250DA12E-XM3
250 kW XM3 Three-Phase Inverter
DC to AC
Three-Phase, 2-Level
250kW
Module
XM3
Wolfspeed
CRD300DA12E-XM3
300 kW XM3 Three-Phase Inverter
DC to AC
Three-Phase, 2-Level
300kW
Module
XM3
Wolfspeed
CRD600DA12E-XM3
600 kW XM3 High Performance Dual Three-Phase Inverter
DC to AC
Dual Three-Phase, 2-Level
600kW
Module
XM3
Wolfspeed

Wolfspeed: Disruptive by Design

From its inception, Wolfspeed has been focused on the future, and that silicon carbide power is the technology that can bring your business forward.

Wolfspeed has more 30 years of experience in silicon carbide power and 7+ trillion installed field hours. We have invested in the future of silicon carbide technology and are expanding our capacity thirtyfold to support your business’s growth. With more than 20 years of diode and MOSFET production, we are equipped to supply the components that enable the future of Uninterruptible Power Supplies.

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Industrial Drives

Benefits of Designing with Wolfspeed Silicon Carbide in Low Voltage Motor Drives

Wolfspeed evaluates SiC in industrial low voltage motor drives at three different power levels to evaluate efficiency improvements, and compares improvements realized when smaller heat sinks are combined with SiC.
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