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1200 V Discrete Silicon Carbide Schottky Diodes

Angled product photo of the front and back of the TO-220-2 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Angled product photo of the front and back of the TO-247-2 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
C4D30120D
1200 V; 30 A; TO-247-3 package; Gen 4 Discrete Silicon Carbide (SiC) Schottky Diode

Wolfspeed’s 1200 V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Pairing Wolfspeed Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.

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1200 V Discrete Silicon Carbide Schottky Diodes

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1200 V Discrete Silicon Carbide Schottky Diodes

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C4D30120D
1200 V
30 A
Gen 4
1.6 V per leg
30 A
77.5 nC per leg
440 W
TO-247-3
Industrial
Yes

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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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