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SiC Materials

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Wolfspeed is transitioning to a new wafer scribe format based upon SEMI specification M12-0706. This conversion, which is projected to be fully integrated in 2022, brings several improvements. The M12-based scribe will be positioned upright when the major flat or notch is oriented up, making the scribe easier to read when the wafers are loaded into cassettes. The new format includes a wafer supplier identification code, validating the wafer’s authenticity. It also includes a checksum, which is an error-detection method that prevents OCR mis-read errors and reduces the instance of processing errors associated with such event.

Industry-Leading Portfolio, Innovation and Scale

With more than 30 years of development and manufacturing experience, Wolfspeed is driving innovation with the industry’s broadest range of SiC and GaN materials. Delivering substrate and epitaxy options up to 150mm diameter, Wolfspeed provides a vertically integrated materials product offering that combines industry-leading volume, scale, quality and a vast intellectual property portfolio. When you partner with Wolfspeed, you get the best and most innovative materials.

Our Products

N-Type
SiC Substrates
HPSI
Semi-insulating SiC Substrates
SiC Epitaxy
N-Type & P-type Epitaxial Layers
Nitride Epitaxy
GaN, AlInN, InGaN Epitaxial Layers

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Physical Properties

Polytype
Single-Crystal 4H
Supported diameters
100mm & 150mm
Crystal structure
Hexagonal
Bandgap
3.26 eV
Thermal conductivity (n-type; 0.020 Ω*cm)
a~4.2 W/cm • K @ 298 K
c~3.7 W/cm • K @ 298 K
Thermal conductivity (HPSI)
a~4.9 W/cm • K @ 298 K
c~3.9 W/cm • K @ 298 K
Lattice parameters
a=3.073 Å
c=10.053 Å
Mohs hardness
9

Dimensional Properties, Terminology, & Methods

Diameter
The linear dimension across the surface of the wafer. Measurement is performed using an automated micrometer, traceable to the ANSI standard, providing the average value for each individual wafer.
Thickness, Center Point
Measured with ANSI-certified non-contact tools at the center of each individual wafer.
Surface Orientation
Denotes the orientation of the surface of a wafer with respect to a crystallographic plane within the lattice structure. In wafers cut intentionally “off orientation,” the direction of cut is parallel to the primary flat, away from the secondary flat. Measured with x-ray goniometer on a sample of one wafer per boule in the center of the wafer.
Orthogonal Misorientation
In wafers intentionally cut “off orientation,” the angle between the projection of the surface normal onto a (0001) plane and the nearest [1120] direction.

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