Silicon Carbide for Power Electronics
A Better Yield Starts with a Higher-Quality Starting Material
As a pioneer in silicon carbide technology, we are leading the industry’s transition to 200 mm n-type wafers — driven by an unwavering commitment to continuous improvement, quality, and customer partnership. Backed by decades of materials expertise, we deliver conductive n-type SiC substrates and a comprehensive portfolio of customized SiC epitaxy at the scale needed to meet rapidly growing global demand for power semiconductor solutions.
At the heart of that commitment are our Premium 200 mm SiC substrates — designed to give silicon carbide IDMs a more predictable, higher-yielding starting material that increases the probability of first-time design success at precisely the moment when the margin for error is shrinking.
This is continuous innovation in practice: pushing the next frontier of SiC technology while delivering the performance, reliability, and sustainability the industry expects.
Materials Portfolio
- 4H
- 4° Off-axis
- 150 mm
- 200 mm
- n-type
- p-type
- Thick epitaxy
Conductive SiC Substrate Product Descriptions
The Materials Business Unit produces a wide assortment of n-type conductive SiC products. Wolfspeed's industry-leading, high-volume platform process provides our customers with the highest degree of material quality, supply assurance and economies of scale.
Part Number | Description |
|---|---|
W4NPG4C-C1-B200 | 4H-SiC, n-type, Production Grade, 150mm, 4° Off-Axis, 0.015-0.028 Ω-cm, Ultra Low MPD ≤0.5/cm2, Low BPD ≤1200/cm2, 350um Thick w/ 47.5mm Flat, Double-Sided Polish Si Face CMP Epi Ready, Bare Substrate |
W4NPH4A-N1-0200 | 4H-SiC, n-type, Production Grade, 200mm, 4° off-axis, 0.015-0.025 Ω-cm, 350μm Thick w/ Notch, Double-Sided Polish Silicon Face CMP Epi Ready, Bare Substrate |
Dimensional Properties, Terminology and Measurements
Flat Length | Linear dimension of the flat measured with automated optical micrometer. |
Primary Flat | The flat of the longest length on the wafer, oriented such that the chord is parallel with a specified low-index crystal plane. |
Primary Flat Orientation | The primary flat is the (1100) plane with the flat face parallel to the [1120] direction. |
Notch | The notch is positioned such that the notch bisector is parallel to the (1100) direction. |
Marking | For silicon face polished material, the carbon face of each individual wafer is laser-marked with OCR-compatible font, similar to definitions and characteristics in SEMI M12. The laser markings are positioned upright when the major flat or notch is oriented up, making the scribe easier to read when the wafers are loaded into cassettes. This format includes a wafer supplier identification code, validating the wafer’s authenticity. It also includes a checksum, which is an error-detection method that prevents OCR mis-read errors and reduces the instance of processing errors associated with such events. |
SiC Epitaxy Product Descriptions
Wolfspeed produces n-type and p-type SiC epitaxial layers on SiC substrates, and has the widest range of available layer thickness up to 200 μm. Unless noted otherwise on the product quotation, the epitaxial layer structure will meet or exceed the following specifications. Additional comments, terms and conditions may be found in the specification document.
Substrate Orientation: SiC Epitaxy is available only for off-axis substrates
150 mm Product Description
Conductivity | n-type | p-type |
|---|---|---|
Drift Dopant | Nitrogen | Aluminum |
Net doping density | ND-NA | NA-ND |
Concentration | 5E14 – 1E19/cm3 | 5E14 – 1E20/cm3 |
Tolerance | ±20% | ±50% |
Drift thickness range | 0.2 - 200 microns | 0.2 - 200 microns |
Tolerance | ±8% | ±10% |
200 mm Product Description
Conductivity | n-type | p-type |
|---|---|---|
Drift Dopant | Nitrogen | Aluminum |
Net doping density | ND-NA | NA-ND |
Concentration | 5E14 – 1E19/cm3 | 5E14 – 1E20/cm3 |
Tolerance | ±12% | ±25% |
Drift thickness range | 0.2 - 200 microns | 0.2 - 200 microns |
Tolerance | ±8% | ±10% |
Contact Wolfspeed Materials Sales for specification on multi-layer or custom epitaxy requests