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SiC Materials

SiC Epitaxy

Wolfspeed is transitioning to a new wafer scribe format based upon SEMI specification M12-0706. This conversion, which is projected to be fully integrated in 2022, brings several improvements. The M12-based scribe will be positioned upright when the major flat or notch is oriented up, making the scribe easier to read when the wafers are loaded into cassettes. The new format includes a wafer supplier identification code, validating the wafer’s authenticity. It also includes a checksum, which is an error-detection method that prevents OCR mis-read errors and reduces the instance of processing errors associated with such event.

Keeping Pace with the World's Demand for SiC Power

Industry-Leading Flexibility and Scale

With more than 30 years of SiC development and manufacturing experience, Wolfspeed produces the industry’s broadest range of SiC materials. Offering n-type conductive SiC products and a variety of SiC epitaxy options up to 150mm diameter, Wolfspeed delivers the quality and quantity necessary to support the rapidly expanding demand for high-efficiency, SiC power semiconductors.

When you partner with Wolfspeed, you get the best and most innovative materials.

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Product Descriptions

Wolfspeed produces n-type and p-type SiC epitaxial layers on SiC substrates, and has the widest range of available layer thickness from sub-micron to >200μm. Unless noted otherwise on the product quotation, the epitaxial layer structure will meet or exceed the following specifications. Additional comments, terms and conditions may be found in the specification document.

Substrate Orientation: SiC Epitaxy is available only for off-axis substrates

Conductivity
n-type
p-type
Dopant
Nitrogen
Aluminum
Net doping density
ND-NA
NA-ND
Silicon face
5E14 – 1E19/cm3
5E14 – 1E20/cm3
Carbon face
1E16 – 1E19/cm3
Not Available
Tolerance
±20%
±50%
Thickness range - Silicon face
0.2–200 microns
±8% of selected thickness
±10% of selected thickness
Thickness range – Carbon face
0.2–1.0 microns
±25% of selected thickness
Not Available
1.0–10.0 microns
±15% of selected thickness
Not Available

Contact Wolfspeed Materials Sales for specification on multi-layer or custom epitaxy requests


Product Specifications

Characteristics
Maximum Acceptability Limits
Test Methods
Defect Definitions
Methodology
Large-point defects
100mm wafer - 20, 150mm wafer - 25
Diffuse
Illumination
D1
M1,M2
Scratches
cumulative scratch length ≤150 mm
Diffuse
Illumination
D2
M1,M2
Backside cleanliness
95% clean
Diffuse
Illumination
D3
M1,M2
Edge chips
See Substrate Specifications
Diffuse
Illumination
D4
M2
Epi defects*
<3/cm3
Candela CS20 /
Lasertec SICA
D5-D6
M3
Net doping
See Product Description table
CV
-
M4
Thickness
See Product Description table
FTIR
-
M5

*Note: 3mm edge exclusion for 100 and 150mm, <70μm thickness

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As energy efficiency standards increase, high-voltage Silicon Carbide and low-voltage GaN are replacing traditional silicon, enabling cooler, lighter, and more powerful electronics. Join Guy Moxey and Alex Lidow, EPC CEO and Co-founder, and explore how Wolfspeed and EPC technologies complement one another in the race towards a more sustainable future.
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