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SiC Materials
SiC Epitaxy
Wolfspeed is transitioning to a new wafer scribe format based upon SEMI specification M12-0706. This conversion is projected to be fully integrated across all products by the end of 2023, and brings several improvements. The M12-based scribe will be positioned upright when the major flat or notch is oriented up, making the scribe easier to read when the wafers are loaded into cassettes. The new format includes a wafer supplier identification code, validating the wafer’s authenticity. It also includes a checksum, which is an error-detection method that prevents OCR mis-read errors and reduces the instance of processing errors associated with such event.
Keeping Pace with the World's Demand for SiC Power
Industry-Leading Flexibility and Scale
With more than 30 years of SiC development and manufacturing experience, Wolfspeed produces the industry’s broadest range of SiC materials. Offering n-type conductive SiC products and a variety of SiC epitaxy options, Wolfspeed delivers the quality and quantity necessary to support the rapidly expanding demand for high-efficiency, SiC power semiconductors.
When you partner with Wolfspeed, you get the best and most innovative materials.
Product Descriptions
Wolfspeed produces n-type and p-type SiC epitaxial layers on SiC substrates, and has the widest range of available layer thickness from sub-micron to >200μm. Unless noted otherwise on the product quotation, the epitaxial layer structure will meet or exceed the following specifications. Additional comments, terms and conditions may be found in the specification document.
Substrate Orientation: SiC Epitaxy is available only for off-axis substrates
Conductivity | n-type | p-type |
|---|---|---|
Dopant | Nitrogen | Aluminum |
Net doping density | ND-NA | NA-ND |
Silicon face | 5E14 – 1E19/cm3 | 5E14 – 1E20/cm3 |
Carbon face | 1E16 – 1E19/cm3 | Not Available |
Tolerance | ±20% | ±50% |
Thickness range - Silicon face | ||
0.2–200 microns | ±8% of selected thickness | ±10% of selected thickness |
Thickness range – Carbon face | ||
0.2–1.0 microns | ±25% of selected thickness | Not Available |
1.0–10.0 microns | ±15% of selected thickness | Not Available |
Contact Wolfspeed Materials Sales for specification on multi-layer or custom epitaxy requests
Product Specifications
Characteristics | Maximum Acceptability Limits | Test Methods | Defect Definitions | Methodology |
|---|---|---|---|---|
Large-point defects | 150mm wafer - 25 | Diffuse Illumination | D1 | M1,M2 |
Scratches | cumulative scratch length ≤150 mm | Diffuse Illumination | D2 | M1,M2 |
Backside cleanliness | 95% clean | Diffuse Illumination | D3 | M1,M2 |
Edge chips | See Substrate Specifications | Diffuse Illumination | D4 | M2 |
Epi defects* | <3/cm3 | Candela CS20 / Lasertec SICA | D5-D6 | M3 |
Net doping | See Product Description table | CV | - | M4 |
Thickness | See Product Description table | FTIR | - | M5 |
*Note: 3mm edge exclusion, <70μm thickness
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