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An electric train crosses through the woods representing how Wolfspeed’s Silicon Carbide solutions run more efficiently and reliably than silicon products.
Industrial

Trains & Traction

The higher operational speeds of Wolfspeed SiC components give designers the tools to create railcar power systems which are up to 50% smaller and 30% lighter than existing systems.

Wolfspeed SiC Solutions for Trains and Traction

A locomotive can pull a mile of train cars thanks to the high-torque electric traction motor. Electric vehicles, roller coasters, and a vast assortment of transportation categories the world over also use this technology, which is controlled by switching electrical current frequency and voltage and through manipulation of magnetic fields. But did you know that all of it runs more efficiently and more reliably because of Wolfspeed Silicon Carbide (SiC) solutions?

Wolfspeed's CRD-22DD12N reference design
Wolfspeed's 22kW Bi-directional High Efficiency DC/DC Converter Reference Design

Trains and traction, powered by Wolfspeed Silicon Carbide

When railcar power system engineers design with Wolfspeed Silicon Carbide, they are able to deliver solutions that are smaller and lighter than systems built on traditional silicon. With Wolfspeed Silicon Carbide, engineers can use fewer components to perform the same jobs at higher levels of performance due to the unique power characteristics of wide-bandgap silicon carbide.

Wolfspeed — minimize size without sacrificing performance

Wolfspeed Silicon Carbide is built for the future of train and traction power system design. Wolfspeed Silicon Carbide offers unparalleled performance, with lower thermal losses and increased reliability. For railcar systems in which failure can mean supply chain disruption (or worse), turn to Wolfspeed SiC.

Up To
80%
Lower Losses
Up To
80%
Higher Power Density
Up To
50%
Smaller Size

Wolfspeed SiC Products for Train and Traction System Design

Railcar power systems are demanding — but Wolfspeed is up to the challenge. Explore our products to learn more about how Wolfspeed Silicon Carbide can work for you.

1200V Discrete Silicon Carbide MOSFETs for Trains & Traction

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1200V Discrete Silicon Carbide MOSFETs for Trains & Traction

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1200V Discrete Silicon Carbide MOSFETs for Trains & Traction - Filter By

1200V Discrete Silicon Carbide MOSFETs for Trains & Traction

Product SKU
Buy Online
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Data Sheet
CAD Model
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Tjmax
Package
C3M0350120J
1200 V
350 mΩ
Gen 3
7.2 A
13 nC
20 pF
40.8 W
150 °C
TO-263-7
C3M0160120D
1200 V
160 mΩ
Gen 3
17 A
38 nC
39 pF
97 W
150 °C
TO-247-3
C3M0075120D
1200 V
75 mΩ
Gen 3
30 A
54 nC
58 pF
113.6 W
150 °C
TO-247-3
C3M0075120J
1200 V
75 mΩ
Gen 3
30 A
51 nC
58 pF
113.6 W
150 °C
TO-263-7
C3M0075120K
1200 V
75 mΩ
Gen 3
32 A
51 nC
58 pF
113.6 W
150 °C
TO-247-4
E3M0075120D
1200 V
75 mΩ
Gen 3
32 A
57 nC
58 pF
145 W
175 °C
TO-247-3
E3M0075120K
1200 V
75 mΩ
Gen 3
32 A
55 nC
58 pF
145 W
175 °C
TO-247-4
C3M0032120D
1200 V
32 mΩ
Gen 3
63 A
114 nC
129 pF
283 W
175 °C
TO-247-3
C3M0032120K
1200 V
32 mΩ
Gen 3
63 A
118 nC
129 pF
283 W
175 °C
TO-247-4
C3M0040120D
1200 V
40 mΩ
Gen 3
66 A
101 nC
103 pF
326 W
175 °C
TO-247-3
C3M0040120K
1200 V
40 mΩ
Gen 3
66 A
99 nC
103 pF
326 W
175 °C
TO-247-4
C3M0032120J1
1200 V
32 mΩ
Gen 3
68 A
111 nC
133 pF
277 W
150 °C
TO-263-7 XL
C3M0021120D
1200 V
21 mΩ
Gen 3
81 A
160 nC
180 pF
469 W
175 °C
TO-247-3
C3M0021120K
1200 V
21 mΩ
Gen 3
100 A
162 nC
180 pF
469 W
175 °C
TO-247-4
C3M0016120D
1200 V
16 mΩ
Gen 3
115 A
207 nC
230 pF
556 W
175 °C
TO-247-3
C3M0016120K
1200 V
16 mΩ
Gen 3
115 A
211 nC
230 pF
556 W
175 °C
TO-247-4

1200V Discrete Silicon Carbide Schottky Diodes for Trains & Traction

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1200V Discrete Silicon Carbide Schottky Diodes for Trains & Traction

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1200V Discrete Silicon Carbide Schottky Diodes for Trains & Traction - Filter By

1200V Discrete Silicon Carbide Schottky Diodes for Trains & Traction

Product SKU
Buy Online
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Data Sheet
CAD Model
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
C4D02120A
1200 V
2 A
Gen 4
1.4 V
2 A
11 nC
60 W
TO-220-2
C4D02120E
1200 V
2 A
Gen 4
1.4 V
2 A
11 nC
52 W
TO-252-2
C4D05120A
1200 V
5 A
Gen 4
1.4 V
5 A
27 nC
81 W
TO-220-2
C4D05120E
1200 V
5 A
Gen 4
1.4 V
5 A
27 nC
97 W
TO-252-2
C4D08120A
1200 V
8 A
Gen 4
1.5 V
8 A
37 nC
120 W
TO-220-2
C4D08120E
1200 V
8 A
Gen 4
1.5 V
8 A
37 nC
137 W
TO-252-2
C4D10120A
1200 V
10 A
Gen 4
1.5 V
10 A
52 nC
136 W
TO-220-2
C4D10120D
1200 V
10 A
Gen 4
1.4 V
10 A
54 nC
187 W
TO-247-3
C4D10120E
1200 V
10 A
Gen 4
1.5 V
10 A
52 nC per leg
170 W
TO-252-2
C4D10120H
1200 V
10 A
Gen 4
1.4 V
10 A
52 nC
136 W
TO-247-2
C4D15120A
1200 V
15 A
Gen 4
1.6 V
15 A
77.5 nC
192 W
TO-220-2
C4D15120D
1200 V
15 A
Gen 4
1.5 V
15 A
37 nC per leg
270 W
TO-247-3
C4D15120H
1200 V
15 A
Gen 4
1.5 V
15 A
77.5 nC
174.5 W
TO-247-2
C4D20120A
1200 V
20 A
Gen 4
1.5 V
20 A
99 nC
242 W
TO-220-2
C4D20120D
1200 V
20 A
Gen 4
1.5 V per leg
20 A
52 nC per leg
352 W
TO-247-3
C4D20120H
1200 V
20 A
Gen 4
1.5 V
20 A
99 nC
246 W
TO-247-2
C4D30120H
1200 V
30 A
Gen 4
1.5 V
30 A
152 nC
441 W
TO-247-2
C4D30120D
1200 V
30 A
Gen 4
1.6 V per leg
30 A
77.5 nC per leg
440 W
TO-247-3
C4D40120H
1200 V
40 A
Gen 4
1.5 V
40 A
167 nC
667 W
TO-247-2
C4D40120D
1200 V
40 A
Gen 4
1.5 V per leg
40 A
99 nC per leg
532 W
TO-247-3
E6D40065D
650 V
40 A
Gen 6
1.3 V
40 A
71 nC
161 W
TO-247-3

Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family

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Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family

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Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Tjmax
Module Size
View Product
CAB5R0A23GM4
Coming
Soon
GM
Half Bridge (AlN substrate)
2300 V
200 A
5 mΩ
Gen 4 MOS
150 °C
62.8 mm x 56.7 mm
CAB5R0A23GM4T
Coming
Soon
GM
Half Bridge (AlN substrate)
2300 V
200 A
5 mΩ
Gen 4 MOS
150 °C
62.8 mm x 56.7 mm
CAB006M12GM3
GM
Half-Bridge
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB006A12GM3
GM
Half Bridge (AlN substrate)
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB006M12GM3T
GM
Half-Bridge
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB006A12GM3T
GM
Half Bridge (AlN substrate)
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB6R0A23GM4
Coming
Soon
GM
Half Bridge (AlN substrate)
2300 V
200 A
6 mΩ
Gen 4 MOS
150 °C
62.8 mm x 56.7 mm
CAB6R0A23GM4T
Coming
Soon
GM
Half Bridge (AlN substrate)
2300 V
200 A
6 mΩ
Gen 4 MOS
150 °C
62.8 mm x 56.7 mm
CAB7R5A23GM4
Coming
Soon
GM
Half Bridge (AlN substrate)
2300 V
170 A
7.5 mΩ
Gen 4 MOS
150 °C
62.8 mm x 56.7 mm
CAB7R5A23GM4T
Coming
Soon
GM
Half Bridge (AlN substrate)
2300 V
170 A
7.5 mΩ
Gen 4 MOS
150 °C
62.8 mm x 56.7 mm
CAB008A12GM3
GM
Half Bridge (AlN substrate)
1200 V
181 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB008M12GM3
GM
Half-Bridge
1200 V
160 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB008M12GM3T
GM
Half-Bridge
1200 V
160 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB008A12GM3T
GM
Half Bridge (AlN substrate)
1200 V
181 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB011M12FM3
FM
Half-Bridge
1200 V
117 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CAB011M12FM3T
FM
Half-Bridge
1200 V
117 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CAB011A12GM3
GM
Half-Bridge
1200 V
141 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB011A12GM3T
GM
Half-Bridge
1200 V
141 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB016M12FM3
FM
Half-Bridge
1200 V
84 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CAB016M12FM3T
FM
Half-Bridge
1200 V
84 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CCB016M12GM3
GM
Six-pack (three-phase)
1200 V
50 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CCB016M12GM3T
GM
Six-pack (three-phase)
1200 V
50 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CCB021M12FM3
FM
Six-pack (three-phase)
1200 V
30 A
21 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CBB021M12FM3
FM
Full-Bridge
1200 V
48 A
21 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CCB021M12FM3T
FM
Six-pack (three-phase)
1200 V
30 A
21 mΩ
Gen 3
150 °C
62.8 mm x 33.8 mm
CBB021M12FM3T
FM
Full-Bridge
1200 V
48 A
21 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CCB032M12FM3
FM
Six-pack (three-phase)
1200 V
30 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CBB032M12FM3
FM
Full-Bridge
1200 V
37 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CCB032M12FM3T
FM
Six-pack (three-phase)
1200 V
30 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CBB032M12FM3T
FM
Full-Bridge
1200 V
37 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm

62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

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62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

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62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules

Product SKU
Buy Online
Data Sheet
CAD Model
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Tjmax
Module Size
View Product
WAS175M12BM3
62 mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
CAS175M12BM3
62 mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
HAS175M12BM3
New
62 mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
WAB300M12BM3
62 mm
Half-Bridge
1200 V
300 A
4 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm
CAS310M17BM3
62 mm
Half-Bridge
1700 V
310 A
4.29 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
WAS310M17BM3
62 mm
Half-Bridge
1700 V
310 A
4.29 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
HAS310M17BM3
New
62 mm
Half-Bridge
1700 V
310 A
4.29 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
WAS350M12BM3
62 mm
Half-Bridge
1200 V
350 A
4 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
CAS350M12BM3
62 mm
Half-Bridge
1200 V
350 A
4 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
HAS350M12BM3
New
62 mm
Half-Bridge
1200 V
350 A
4 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
WAB400M12BM3
62 mm
Half-Bridge
1200 V
400 A
3.25 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm
CAB530M12BM3
62 mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS
150 °C
105 x 62 x 31 mm
WAS530M12BM3
62 mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
CAS530M12BM3
62 mm
Half-Bridge
1200 V
530 A
2.6 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm
HAS530M12BM3
New
62 mm
Half-Bridge
1200 V
530 A
2.67 mΩ
Gen 3 MOS + Diodes
150 °C
105 x 62 x 31 mm

XM3 Half-Bridge Silicon Carbide Power Module Family

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