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Bare Die Silicon Carbide MOSFETs

With industry-leading low specific on-resistance over temperature, Wolfspeed’s broad portfolio of Bare Die MOSFETs enables a system-level customization and efficiency to maximize power density. Wolfspeed offers one of the broadest Silicon Carbide (SiC) power die product portfolios in the industry in terms of die layout and metallurgy for optimized module assembly. We continue to lead in Silicon Carbide with Wolfspeed's first automotive qualified Gen 3 family of Bare Die Silicon Carbide (SiC) MOSFETs providing the highest figures of merit in the most demanding applications. As a vertically integrated Silicon Carbide leader for the past 30 years, Wolfspeed provides advanced design, extensive qualification, screening and parametric characterization resulting in the most reliable and robust devices on the market.

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Product SKU	Blocking Voltage	R_DS(ON) at 25°C	Current Rating	Gate Charge Total	Output Capacitance	Reverse Recovery Charge (Qrr)	Reverse Recover Time (Trr)	Maximum Junction Temperature	Generation	Recommended For New Design?
CPM3-0650-0015A	650 V	15 mΩ	120 A		55 pF	192 nC	20 ns	175 °C	Gen 3	Yes
CPM3-0900-0065A	900 V	65 mΩ	32 A	33 nC	70 pF	220 nC	22 ns	175 °C	Gen 3	Yes
CPM3-0900-0010A	900 V	10 mΩ	194 A	210 nC	360 pF	1300 nC	36 ns	175 °C	Gen 3	Yes
CPM3-0900-0030A	900 V	30 mΩ	66 A	87 nC	137 pF	545 nC	62 ns	175 °C	Gen 3	Yes
EPM3-1200-0017D1	1200 V	17 mΩ	134 A	207 nC	221 pF	1242 nC	53 ns	175 °C	Gen 3	Yes
EPM3-1200-0017D	1200 V	17 mΩ	134 A	200 nC	220 pF	1100 nC	52 ns	175 °C	Gen 3	Yes
CPM2-1200-0160A	1200 V	160 mΩ	18 A	40 nC	55 pF	192 nC	20 ns	175 °C	Gen 2	Yes
CPM2-1200-0080A	1200 V	80 mΩ	36 A	71 nC	92 pF	152 nC	24 ns	175 °C	Gen 2	Yes
CPM2-1200-0040A	1200 V	40 mΩ	60 A	131 nC	157 pF	964 nC	63 ns	175 °C	Gen 2	Yes
CPM2-1200-0025A	1200 V	25 mΩ	81 A	161 nC	235 pF	406 nC	45 ns	175 °C	Gen 2	Yes
CPM3-1200-0013A	1200 V	13 mΩ	149 A	260 nC	284 pF	1800 nC	43 ns	175 °C	Gen 3	Yes
CPM3-1200-0075A	1200 V	75 mΩ	30 A	54 nC	58 pF	109 nC	25 ns	175 °C	Gen 3	Yes
CPM3-1200-0016A	1200 V	16 mΩ	112 A	227 nC	230 pF	1238 nC	30 ns	175 °C	Gen 3	Yes
CPM3-1200-0021A	1200 V	21 mΩ	100 A	162 nC	180 pF	928 nC	34 ns	175 °C	Gen 3	Yes
CPM3-1200-0032A	1200 V	32 mΩ	63 A	118 nC	130 pF	231 nC	58 ns	175 °C	Gen 3	Yes
CPM3-1700-R020E	1700 V	17.5 mΩ	120 A	249 nC	188 pF	2557 nC	43 ns	175 °C	Gen 3	Yes

Product SKU	Blocking Voltage	R_DS(ON) at 25°C	Current Rating	Gate Charge Total	Output Capacitance	Reverse Recovery Charge (Qrr)	Reverse Recover Time (Trr)	Maximum Junction Temperature	Generation	Recommended For New Design?
CPM3-0650-0015A	650 V	15 mΩ	120 A		55 pF	192 nC	20 ns	175 °C	Gen 3	Yes
CPM3-0900-0065A	900 V	65 mΩ	32 A	33 nC	70 pF	220 nC	22 ns	175 °C	Gen 3	Yes
CPM3-0900-0010A	900 V	10 mΩ	194 A	210 nC	360 pF	1300 nC	36 ns	175 °C	Gen 3	Yes
CPM3-0900-0030A	900 V	30 mΩ	66 A	87 nC	137 pF	545 nC	62 ns	175 °C	Gen 3	Yes
EPM3-1200-0017D1	1200 V	17 mΩ	134 A	207 nC	221 pF	1242 nC	53 ns	175 °C	Gen 3	Yes
EPM3-1200-0017D	1200 V	17 mΩ	134 A	200 nC	220 pF	1100 nC	52 ns	175 °C	Gen 3	Yes
CPM2-1200-0160A	1200 V	160 mΩ	18 A	40 nC	55 pF	192 nC	20 ns	175 °C	Gen 2	Yes
CPM2-1200-0080A	1200 V	80 mΩ	36 A	71 nC	92 pF	152 nC	24 ns	175 °C	Gen 2	Yes
CPM2-1200-0040A	1200 V	40 mΩ	60 A	131 nC	157 pF	964 nC	63 ns	175 °C	Gen 2	Yes
CPM2-1200-0025A	1200 V	25 mΩ	81 A	161 nC	235 pF	406 nC	45 ns	175 °C	Gen 2	Yes
CPM3-1200-0013A	1200 V	13 mΩ	149 A	260 nC	284 pF	1800 nC	43 ns	175 °C	Gen 3	Yes
CPM3-1200-0075A	1200 V	75 mΩ	30 A	54 nC	58 pF	109 nC	25 ns	175 °C	Gen 3	Yes
CPM3-1200-0016A	1200 V	16 mΩ	112 A	227 nC	230 pF	1238 nC	30 ns	175 °C	Gen 3	Yes
CPM3-1200-0021A	1200 V	21 mΩ	100 A	162 nC	180 pF	928 nC	34 ns	175 °C	Gen 3	Yes
CPM3-1200-0032A	1200 V	32 mΩ	63 A	118 nC	130 pF	231 nC	58 ns	175 °C	Gen 3	Yes
CPM3-1700-R020E	1700 V	17.5 mΩ	120 A	249 nC	188 pF	2557 nC	43 ns	175 °C	Gen 3	Yes

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Power

Power Modules

Accelerating Time to Market Through Silicon Carbide Innovation

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