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  • Bare Die Silicon Carbide MOSFETs

Bare Die Silicon Carbide MOSFETs

Create custom scalable, tailored solutions with greater control over package development to meet stringent system reliability requirements for automotive and industrial applications with Wolfspeed's silicon carbide (SiC) Bare Die MOSFETs.
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Products

Bare Die Silicon Carbide MOSFETs

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Bare Die Silicon Carbide MOSFETs - Filter By

Bare Die Silicon Carbide MOSFETs

Product SKU
Buy Online
Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Tjmax
Generation
Qualification
CPM3-0650-0015A
Active
650 V
15 mΩ
120 A
190 nC
290 pF
510 nC
22 ns
175 °C
Gen 3
Industrial
CPM3-0650-0045A
Active
650 V
45 mΩ
49 A
63 nC
100 pF
247 nC
13 ns
175 °C
Gen 3
Industrial
CPM3-0650-0060A
Active
650 V
60 mΩ
37 A
46 nC
80 pF
151 nC
11 ns
175 °C
Gen 3
Industrial
EPM3-0750-0010D
Active
750 V
10 mΩ
178 A
267 nC
340 pF
737 nC
25 ns
175 °C
Gen 3+
Automotive
CPM3-0900-0010A
Active
900 V
10 mΩ
194 A
210 nC
360 pF
1300 nC
36 ns
175 °C
Gen 3
Industrial
CPM3-0900-0065A
Active
900 V
65 mΩ
32 A
33 nC
70 pF
220 nC
22 ns
175 °C
Gen 3
Industrial
EM4E120-032D10​
New
Active
1200 V
9.6 mΩ
202 A
317 nC
259 pF
45 ns
185 °C
Gen 4
Automotive
EM4E120-028D00
New
Active
1200 V
11.6 mΩ
166 A
260 nC
220 pF
31 ns
185 °C
Gen 4
Automotive
EM4E120-025D00
New
Active
1200 V
13 mΩ
149 A
234 nC
210 pF
33 ns
185 °C
Gen 4
Automotive
EPM3-1200-R013D
Active
1200 V
13 mΩ
160 A
265 nC
226 pF
1259 nC
34 ns
175 °C
Gen 3+
Automotive
CPM3-1200-0013A
Active
1200 V
13 mΩ
149 A
260 nC
284 pF
1800 nC
43 ns
175 °C
Gen 3
Industrial
EPM4-0120-0260JS0A
Active
1200 V
13.8 mΩ
159 A
251 nC
212 pF
1379 nC
50 ns
175 °C
Gen 4
Automotive
EPM3-1200-0014D1
Active
1200 V
14 mΩ
149 A
255 nC
200 pF
1068 nC
31 ns
175 °C
Gen 3+
Automotive
EPM3-1200-R015D
Active
1200 V
15 mΩ
148 A
238 nC
200 pF
1388 nC
34 ns
175 °C
Gen 3+
Automotive
CPM3-1200-0016A
Active
1200 V
16 mΩ
112 A
227 nC
230 pF
1238 nC
30 ns
175 °C
Gen 3
Industrial
EPM3-1200-0017D1-R01
Active
1200 V
17 mΩ
134 A
207 nC
221 pF
1242 nC
53 ns
175 °C
Gen 3
Automotive
EPM3-1200-0017D-R01
Active
1200 V
17 mΩ
134 A
200 nC
220 pF
1100 nC
52 ns
175 °C
Gen 3
Automotive
CPM3-1200-0021A
Active
1200 V
21 mΩ
100 A
162 nC
180 pF
928 nC
34 ns
175 °C
Gen 3
Industrial
CPM4-0120-0149JS0A
Active
1200 V
26 mΩ
90 A
136 nC
110 pF
590 nC
56 ns
175 °C
Gen 4
Industrial
CPM3-1200-0032A
Active
1200 V
32 mΩ
63 A
118 nC
130 pF
478 nC
27 ns
175 °C
Gen 3
Industrial
CPM4-0120-0104JS0A
Active
1200 V
42 mΩ
55 A
93 nC
85 pF
496 nC
24 ns
175 °C
Gen 4
Industrial
CPM3-1200-0075A
Active
1200 V
75 mΩ
30 A
54 nC
58 pF
109 nC
25 ns
175 °C
Gen 3
Industrial
CPM3-1700-R020E
Active
1700 V
17.5 mΩ
120 A
249 nC
188 pF
2557 nC
43 ns
175 °C
Gen 3
Industrial
EPM3-1700-0900A
New
Active
1700 V
900 mΩ
3.9 A
10 nC
8 pF
72 nC
40 ns
175 °C
Gen 3
Automotive
CPM4-0230-0255ES0A
New
Active
2300 V
30 mΩ
83 A
147 nC
102 pF
256 nC
16 ns
175 °C
Gen 4
Industrial
CPM3-3300-R050A
Active
3300 V
53 mΩ
52 A
255 nC
140 pF
2.5 nC
124 ns
175 °C
Gen 3
Industrial

End of Section

1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3
1200 V Bare Die Silicon Carbide MOSFETs – Gen 3
1200 V Bare Die SiC MOSFETs – Gen 2
1700 V Industrial Qualified Bare Die Silicon Carbide MOSFETs – Gen 3
650 V Bare Die SiC MOSFETs – Gen 3
750 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+
900 V Bare Die SiC MOSFETs – Gen 3
1200 V Bare Die Silicon Carbide MOSFETs – Gen 4
1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+
1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3
1200 V Bare Die Silicon Carbide MOSFETs – Gen 3
1200 V Bare Die SiC MOSFETs – Gen 2
1700 V Industrial Qualified Bare Die Silicon Carbide MOSFETs – Gen 3
650 V Bare Die SiC MOSFETs – Gen 3
750 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+
900 V Bare Die SiC MOSFETs – Gen 3
1200 V Bare Die Silicon Carbide MOSFETs – Gen 4
1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+
1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3
1200 V Bare Die Silicon Carbide MOSFETs – Gen 3
1200 V Bare Die SiC MOSFETs – Gen 2
1700 V Industrial Qualified Bare Die Silicon Carbide MOSFETs – Gen 3

Documents, Tools & Support

  • Technical & Sales Documents
  • Tools & Support
  • Compliance

Documents

12 Documents Available
Document Type
Document Name
Last Updated
Application Notes
PRD-09129: Mitigating Package Induced Failures
New
05/2025
Application Notes
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages
02/2025
Application Notes
PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies
01/2025
Application Notes
PRD-08937: Impact of VGS on SiC MOSFET Characteristics
01/2025
Application Notes
PRD-07969: Sintering Considerations and the Die Top System
04/2024
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06379: Environmental Considerations for Power Electronics Systems
08/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
Application Notes
PRD-05653: Recommended Solder Profiles for Power Products
09/2022
Application Notes
PRD-05641: Designing with Silicon Carbide in Energy Storage Applications
02/2022
White Papers
Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications
New
01/2025
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025

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