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Bare Die Silicon Carbide MOSFETs

With industry-leading low specific on-resistance over temperature, Wolfspeed’s broad portfolio of Bare Die MOSFETs enables a system-level customization and efficiency to maximize power density. Wolfspeed offers one of the broadest Silicon Carbide (SiC) power die product portfolios in the industry in terms of die layout and metallurgy for optimized module assembly. We continue to lead in Silicon Carbide with Wolfspeed's first automotive qualified Gen 3 family of Bare Die Silicon Carbide (SiC) MOSFETs providing the highest figures of merit in the most demanding applications. As a vertically integrated Silicon Carbide leader for the past 30 years, Wolfspeed provides advanced design, extensive qualification, screening and parametric characterization resulting in the most reliable and robust devices on the market.
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Bare Die Silicon Carbide MOSFETs

Product SKU
Buy Online
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Recommended For New Design?
CPM3-0650-0015A
650 V
15 mΩ
120 A
190 nC
290 pF
510 nC
22 ns
175 °C
Gen 3
Yes
CPM3-0650-0045A
New
650 V
45 mΩ
49 A
63 nC
100 pF
247 nC
13 ns
175 °C
Gen 3
Yes
650 V
60 mΩ
37 A
46 nC
80 pF
151 nC
11 ns
175 °C
Gen 3
Yes
900 V
10 mΩ
194 A
210 nC
360 pF
1300 nC
36 ns
175 °C
Gen 3
Yes
900 V
30 mΩ
66 A
87 nC
137 pF
545 nC
62 ns
175 °C
Gen 3
Yes
900 V
65 mΩ
32 A
33 nC
70 pF
220 nC
22 ns
175 °C
Gen 3
Yes
1200 V
13 mΩ
149 A
260 nC
284 pF
1800 nC
43 ns
175 °C
Gen 3
Yes
1200 V
16 mΩ
112 A
227 nC
230 pF
1238 nC
30 ns
175 °C
Gen 3
Yes
1200 V
17 mΩ
134 A
200 nC
220 pF
1100 nC
52 ns
175 °C
Gen 3
Yes
1200 V
17 mΩ
134 A
207 nC
221 pF
1242 nC
53 ns
175 °C
Gen 3
Yes
1200 V
21 mΩ
100 A
162 nC
180 pF
928 nC
34 ns
175 °C
Gen 3
Yes
1200 V
25 mΩ
81 A
161 nC
235 pF
406 nC
45 ns
175 °C
Gen 2
No
1200 V
32 mΩ
63 A
118 nC
130 pF
231 nC
58 ns
175 °C
Gen 3
Yes
1200 V
40 mΩ
60 A
131 nC
157 pF
964 nC
63 ns
175 °C
Gen 2
No
1200 V
75 mΩ
30 A
54 nC
58 pF
109 nC
25 ns
175 °C
Gen 3
Yes
1200 V
80 mΩ
36 A
71 nC
92 pF
152 nC
24 ns
175 °C
Gen 2
No
1200 V
160 mΩ
18 A
40 nC
55 pF
192 nC
20 ns
175 °C
Gen 2
No
1200 V
160 mΩ
17 A
38 nC
39 pF
194 nC
34 ns
150 °C
Gen 3
Yes
1700 V
17.5 mΩ
120 A
249 nC
188 pF
2557 nC
43 ns
175 °C
Gen 3
Yes
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Continue the conversation with Guy Moxey and EPC CEO and Co-Founder Alex Lidow as they explore how GaN and Wolfspeed Silicon Carbide are changing the way we live, and where the future of these technologies could take us.
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