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    • Bare Die Silicon Carbide MOSFETs
    • 750 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+

    750 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+

    Wolfspeed's automotive qualified Gen 3+ family of 750 V silicon carbide MOSFETs are optimized for high power applications
    Wolfspeed continues to lead in silicon carbide (SiC) with the Automotive 750 V E-Series Bare Die SiC MOSFET. The product is fully automotive qualified, with high blocking voltage with the industry-leading low RDS(ON) over temperature stability, enabling low conduction losses and highest figures of merit in the most demanding applications. This device is optimized for use in high power applications such as automotive drive trains, motor drives, solid state circuit breakers, and more. The 750 V MOSFET is designed for low RDS(ON), are easy to parallel and compatible with standard gate drive design. The efficiency gained by moving from a silicon-based solution to Silicon Carbide can help reduce system size, weight, and cooling requirements.
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    • Overview
    • Parametric Data
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    Parametric Data

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    Product SKU
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    Data Sheet
    Status
    Blocking Voltage
    RDS(ON) at 25°C
    Current Rating
    Gate Charge Total
    Output Capacitance
    Reverse Recovery Charge (Qrr)
    Reverse Recovery Time (Trr)
    Tjmax
    Generation
    Qualification
    EPM3-0750-0010D

    Purchase EPM3-0750-0010D
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    MEV Elektronik Service GmbH
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    ATM Electronic Corp
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    Changnam INT LTD
    Active
    750 V
    10 mΩ
    178 A
    267 nC
    340 pF
    737 nC
    25 ns
    175 °C
    Gen 4
    Automotive

    Knowledge Center

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    Designing with Top Side Cooled (TSC) Silicon Carbide Power Devices 

    Improve thermal management and conserve power with Wolfspeed’s New TSC MOSFETs and Schottky diodes.
    Continue Reading  Technical Articles

    Add Miles and Years of Performance to Your Next 800-V EV Traction Inverter Platform

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    Reimagine Auxiliary Power Supply System Durability & Cost with Wolfspeed’s New 1700 V MOSFET Technology

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    Features

    • Automotive Qualified
    • High blocking voltage with industry leading low RDS(on) over temperature stability
    • Resistant to latch-up
    • High gate resistance for drives

    Benefits

    • Improves System Efficiency with lower switching and conduction losses
    • Reduces System Size, Weight, and Cooling Requirements
    • Enables high switching frequency operation
    • Easy to parallel and compatible with standard gate drive design

    Typical Applications

    • Automotive Drivetrain
    • Motor Drives
    • Solid State Circuit Breaker

    Tools & Support

    • Technical & Sales Documents
    • Tools & Support
    • Compliance

    Documents

    11 Documents Available
    Document Type
    Document Name
    Last Updated
    Application Notes
    PRD-09129: Mitigating Package Induced Failures (PDF)
    05/2025
    Application Notes
    PRD-08937: Impact of VGS on SiC MOSFET Characteristics (PDF)
    11/2024
    Application Notes
    PRD-07969: Sintering Considerations and the Die Top System (PDF)
    04/2024
    Application Notes
    PRD-08296: SiC MOSFET Short Circuit Events (PDF)
    11/2023
    Application Notes
    PRD-06933: Capacitance Ratio and Parasitic Turn-on (PDF)
    01/2023
    White Papers
    Designed to Last, Even in the Harshest Environments (PDF)
    11/2025
    White Papers
    Enhancing System Durability with Advanced Packaging for Silicon Carbide (PDF)
    11/2025
    White Papers
    SiC Power Module Reliability: Wolfspeed’s Power Cycling and Lifetime Modeling Approach (PDF)
    New
    11/2025
    Sales Sheets & Flyers
    Wolfspeed Silicon Carbide Solutions for EV Inverters (PDF)
    03/2022
    Sales Terms
    Wolfspeed, Inc. Sales Terms and Conditions (PDF)
    04/2025
    Product Catalog
    Power Product Line Card (PDF)
    01/2025

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