Features
- Automotive Qualified
- High blocking voltage with industry leading low RDS(on) over temperature stability
- Resistant to latch-up
- High gate resistance for drives
Product SKU | Buy Online | Data Sheet | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Maximum Junction Temperature | Generation | Recommended For New Design? |
---|---|---|---|---|---|---|---|---|---|---|---|---|
EPM3-0750-0010D | 750 V | 10 mΩ | 178 A | 267 nC | 340 pF | 737 nC | 25 ns | 175 °C | Gen 3+ | Yes |
Document Type | Document Name |
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Application Notes | |
Application Notes | |
Product Catalog | |
Sales Sheets & Flyers | |
Sales Terms | |
Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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