Wolfspeed's Gen 5 SiC MOSFETs are engineered for real-world performance — not just ideal conditions. Built on optimized planar MOSFET design, Gen 5 achieves better RDS(ON) through tightened epitaxy, increased active area, and enhanced soft body diode technology. The result: lower losses, higher reliability, and greater design confidence for automotive and industrial applications.
EPM3-0750-0010D
750 V, 10 mΩ, Gen 4, Automotive qualified, Bare Die Silicon Carbide (SiC) MOSFET
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Product SKU | Buy Online | Data Sheet | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Tjmax | Generation | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
EPM3-0750-0010D | Active | 750 V | 10 mΩ | 178 A | 267 nC | 340 pF | 737 nC | 25 ns | 175 °C | Gen 4 | Automotive |
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Improve thermal management and conserve power with Wolfspeed’s New TSC MOSFETs and Schottky diodes.