Wolfspeed silicon carbide meets efficiency standards while enabling smaller, lighter, more efficient industrial low voltage motor drives.
Today, heating and cooling systems consume more than 50% of all energy produced globally. Increasingly stringent energy efficiency standards including the American SEER ratings; ESEER and SCOP levels in Europe, the middle east and Africa; and China’s GB21455 standards are all targeting reducing the impact heating and cooling have on our power grid and on the warming planet.
Switching from traditional silicon to Wolfspeed Silicon Carbide devices can increase a heating or cooling system’s efficiency while reducing overall unit size and cost of ownership. Silicon carbide enables increased SCOP levels, superior thermal performance and less audible noise (>20 kHz frequency).
Six-pack Wolfspeed WolfPACK™ power modules enable superior performance and system efficiency. When compared to leading IGBT solutions in a 25 kW inverter system, the WolfPACK™ achieves 1.1% higher efficiency with a 77% smaller heat sink (0.31 L vs 1.37 L).
Conversely, the WolfPACK can run at higher loads with smaller heat sinks, allowing designers to design embedded drive systems that are smaller and lighter and require up to 77% smaller heat sinks. Even at a higher 16 kHz switching frequency with the same heat sink, silicon carbide remains thermally stable and outperforms silicon IGBTs. Additionally, due to higher switching frequencies, silicon carbide enables reduced audible noise compared to a silicon IGBT system, without compromising efficiency.
25 kW inverter, Fsw = 8 kHz, 77% reduced SiC MOSFET Heat Sink: 0.31L (1.6°C/W) vs. 1.37 L (0.73°C/W)
The graphs above demonstrate the improvement in efficiency with silicon carbide Six-Pack WolfPACK™ modules vs IGBT modules in a 25 kW inverter with an 0.8 L heat sink. As the power level increases, the junction temperature of 50 A and 100 A rated silicon IGBTs increases, causing them to fail, while Wolfspeed 32 A silicon carbide MOSFET remains stable and well below the failure threshold.
25 kW inverter, Fsw = 16 kHz, Larger Si IGBT Heat Sink: 1.37 L (0.7°C/W) , smaller SiC Heat Sink 0.8 L (0.99°C/W)
At 16kHz switching frequency, we see 100 A and 50 A rated silicon IGBTs fail thermally beyond 10 kW and 15 kW respectively, despite using a 41% larger heat sink size than 32 A Wolfspeed silicon carbide MOSFETs.
Wolfspeed’s 650 V silicon carbide MOSFETs and diodes in smaller 11 kW heat pump and air conditioner systems offer significant benefits over traditional silicon IGBTs. By simply dropping in C6D16065D Schottky diodes to upgrade an 11kW system improves overall system efficiency by 0.5%. Efficiency improvement increases to 2.4% in a bridgeless TP-PFC when the PFC is redesigned and inverter upgraded with silicon carbide.
When compared to high-speed, soft-switched IGBTs, Wolfspeed 650 V MOSFETs offer drastically lower conduction losses and almost no switching losses.
Maximize heat pump and air conditioning efficiency when you simulate with SpeedFit Design Simulator, the first step to selecting the right devices for your design. Our online simulation tool offers an easy-to-use interface for evaluating Wolfspeed’s silicon carbide MOSFETs, diodes and power modules many power topologies. Start simulating today and harness the power of Wolfspeed silicon carbide in your heat pumps and air conditioners.
Wolfspeed’s products represent the culmination of years of experience and expertise, where quality meets innovation to help bring your design forward.
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | RDS(ON) at 25°C | Generation | Current Rating | Gate Charge Total | Output Capacitance | Total Power Dissipation (PTOT) | Maximum Junction Temperature | Package | Recommended For New Design? | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1200 V | 75 mΩ | Gen 3 | 32 A | 51 nC | 58 pF | 113.6 W | 150 °C | TO-247-4 | Yes | Industrial | |||||
1200 V | 75 mΩ | Gen 3 | 30 A | 51 nC | 58 pF | 113.6 W | 150 °C | TO-263-7 | Yes | Industrial | |||||
1200 V | 40 mΩ | Gen 3 | 64 A | 61 nC | 94 pF | 272 W | 150 °C | TO-263-7 | Yes | Industrial | |||||
650 V | 15 mΩ | Gen 3 | 120 A | 188 nC | 289 pF | 416 W | 175 °C | TO-247-4 | Yes | Industrial | |||||
650 V | 45 mΩ | Gen 3 | 47 A | 61 nC | 101 pF | 147 W | 150 °C | TO-263-7 | Yes | Industrial | |||||
650 V | 60 mΩ | Gen 3 | 36 A | 46 nC | 80 pF | 136 W | 175 °C | TO-263-7 | Yes | Industrial | |||||
1200 V | 32 mΩ | Gen 3 | 68 A | 111 nC | 133 pF | 277 W | 150 °C | TO-263-7 | Yes | Industrial |
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | Current Rating | Generation | Forward Voltage(VF(type)) | Maximum Continuous Current (IF) | Total Capacitive Charge (QC (typ)) | Total Power Dissipation (PTOT) | Package | Qualification | Recommended For New Design? |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1200 V | 10 A | Gen 4 | 1.5 V | 10 A | 52 nC per leg | 170 W | TO-252-2 | Industrial | Yes | |||||
650 V | 16 A | Gen 3 | 1.5 V | 16 A | 44 nC | 150 W | TO-220-2 | Industrial | Yes | |||||
650 V | 16 A | Gen 6 | 1.27 V | 16 A | 29 nC | 100 W | TO-247-3 | Industrial | Yes |
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Maximum Junction Temperature | Module Size | Recommended For New Design? | Qualification | View Product |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FM3 | Six-pack (three-phase) | 1200 V | 30 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Yes | Industrial |
Name | Buy Online | Topology | Status | Package | Designed By | Product SKU | View Product |
|---|---|---|---|---|---|---|---|
Three-Phase, 2-Level | Available for Purchase | FM3 | Wolfspeed | CRD25DA12N-FMC | |||
Three-Phase, 2-Level | Paper Design Only | TO-247-4 | Wolfspeed | CRD-22AD12N |
