- High Temperature (175 °C) Operation
- Low Inductance (6.7 nH) Design
- Utilizes Latest 3rd Generation Silicon Carbide MOSFETS
- Integrated Temperature Sensor and Kelvin-Drain Connection
- Silicon Nitride Ceramic Substrate and Copper Baseplate
Wolfspeed has developed the XM3 power module platform to maximize the benefits of Silicon Carbide, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module, the XM3 power module maximizes power density while minimizing loop inductance and enabling simple power bussing. The optimized packaging enables 175°C continuous junction operation, with a high reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions. The XM3 is a perfect fit for demanding applications such as traction drives, DC fast chargers, universal power supplies and automotive testing equipment.
RDS(ON) at 25°C
Maximum Junction Temperature
Recommended For New Design?
Gen 3 MOS
80 x 53 x 19 mm
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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs