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XM3 Half-Bridge Power Module Family

Product shot of Wolfspeed's XM3 Half-bridge SiC power module package
Half-Bridge Power Module Designed for Silicon Carbide to Enable High Power Density

Wolfspeed continues to lead in Silicon Carbide with our first automotive qualified 1200 V, 450 A, all-Silicon Carbide conduction-optimized, half-bridge XM3 power module. Enabling high efficiency and high power density in the most demanding automotive applications.

Wolfspeed has developed 1200 V and 1700 V XM3 power module platform to maximize the benefits of Silicon Carbide, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module, the XM3 power module maximizes power density while minimizing loop inductance and enabling simple power bussing. The optimized packaging enables 175°C continuous junction operation, with a high reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions. The XM3 is a perfect fit for demanding applications such as traction drives, DC fast chargers, universal power supplies and automotive testing equipment.

Products

XM3 Half-Bridge Power Module Family

XM3 Half-Bridge Power Module Family

Product SKU
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Data Sheet
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Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
Recommended For New Design?
Qualification
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CAB320M17XM3
New
XM3
Half-Bridge
1700 V
320 A
4 mΩ
Gen 3
175 °C
80 x 53 x 19 mm
Yes
Industrial
CAB400M12XM3
XM3
Half-Bridge
1200 V
400 A
4 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
Yes
Industrial
CAB425M12XM3
XM3
Half-Bridge
1200 V
425 A
3.2 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
Yes
Industrial
CAB450M12XM3
XM3
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
Yes
Industrial
EAB450M12XM3
New
XM3
Half-Bridge
1200 V
450 A
2.6 mΩ
Gen 3 MOS
175 °C
80 x 53 x 19 mm
Yes
Automotive

Product Details

Features
  • High Temperature (175 °C) Operation
  • Low Inductance (6.7 nH) Design
  • Utilizes Latest 3rd Generation Silicon Carbide MOSFETS
  • Integrated Temperature Sensor and Kelvin-Drain Connection
  • Silicon Nitride Ceramic Substrate and Copper Baseplate
Benefits
  • Power Dense Footprint Enables Compact Systems
  • Offset Terminal Layout Simplifies Bus Bar Design and Reduces System Stray Inductance
  • Low Inductance Design Enables Fast Switching to Reduce Dynamic Losses
  • SiN AMB Substrate and High Reliability Solders Enhance Lifetime
  • Direct Gate Driver Mating Enables Compact Design with Low Inductance
Applications
  • Traction Drives
  • Motor Drives
  • UPS
  • EV Chargers
  • Industrial Automation & Testing
  • Power Supplies
  • More Electric Aircraft and eVTOL
  • Energy Generation/Smart Grids/Smart Energy

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