Features
- High Temperature (175 °C) Operation
- Low Inductance (6.7 nH) Design
- Utilizes Latest 3rd Generation Silicon Carbide MOSFETS
- Integrated Temperature Sensor and Kelvin-Drain Connection
- Silicon Nitride Ceramic Substrate and Copper Baseplate
XM3 Half-Bridge Power Module Family
Half-Bridge Power Module Designed for Silicon Carbide to Enable High Power Density
Wolfspeed has developed the XM3 power module platform to maximize the benefits of Silicon Carbide, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module, the XM3 power module maximizes power density while minimizing loop inductance and enabling simple power bussing. The optimized packaging enables 175°C continuous junction operation, with a high reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme conditions. The XM3 is a perfect fit for demanding applications such as traction drives, DC fast chargers, universal power supplies and automotive testing equipment.
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XM3 Half-Bridge Power Module Family
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XM3 Half-Bridge Power Module Family - Filter By
XM3 Half-Bridge Power Module Family
Product SKU | Buy Online | Data Sheet | CAD Model | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Maximum Junction Temperature | Module Size | Recommended For New Design? | Qualification | View Product |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CAB320M17XM3 New | XM3 | Half-Bridge | 1700 V | 320 A | 3.5 mΩ | Gen 3 | 175 °C | 80 x 53 x 19 mm | Yes | Industrial | ||||
XM3 | Half-Bridge | 1200 V | 400 A | 4 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | Yes | Industrial | |||||
XM3 | Half-Bridge | 1200 V | 425 A | 3.2 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | Yes | Industrial | |||||
XM3 | Half-Bridge | 1200 V | 450 A | 2.6 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | Yes | Industrial | |||||
XM3 | Half-Bridge | 1200 V | 450 A | 2.6 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | Yes | Automotive |
Product Details
Benefits
- Power Dense Footprint Enables Compact Systems
- Offset Terminal Layout Simplifies Bus Bar Design and Reduces System Stray Inductance
- Low Inductance Design Enables Fast Switching to Reduce Dynamic Losses
- SiN AMB Substrate and High Reliability Solders Enhance Lifetime
- Direct Gate Driver Mating Enables Compact Design with Low Inductance
Applications
- Traction Drives
- Motor Drives
- UPS
- EV Chargers
- Industrial Automation & Testing
- Power Supplies
- More Electric Aircraft and eVTOL
- Energy Generation/Smart Grids/Smart Energy
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
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| Application Notes | |
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| Sales Sheets & Flyers | |
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| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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| Sales Terms |
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