Features
- High Temperature (175 °C) Operation
- Low Inductance (6.7 nH) Design
- Utilizes Latest 3rd Generation Silicon Carbide MOSFETS
- Integrated Temperature Sensor and Kelvin-Drain Connection
- Silicon Nitride Ceramic Substrate and Copper Baseplate
EAB450M12XM3
1200 V, 2.6 mΩ, XM, Half-Bridge, Automotive qualified, SiC Power Module
Parametric Data
XM3 Half-Bridge Power Module Family
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XM3 Half-Bridge Power Module Family
Product SKU | Buy Online | Data Sheet | Status | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Maximum Junction Temperature | Module Size | Qualification | View Product |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
EAB450M12XM3 | Active | XM | Half-Bridge | 1200 V | 450 A | 2.6 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | Automotive |
Ordering & Compliance
EAB450M12XM3 Ordering
| Part Number | EAB450M12XM3 |
|---|---|
| Order Status | Active |
| Buy Online | |
| Package | XM |
| Container Type | Unit Box |
| Container Qty. | 1 |
| Standard Packing Qty. | 1 |
| Minimum Order Qty. | 1 |
EAB450M12XM3 Compliance
| REACh Declaration | |
|---|---|
| California Prop 65 | Learn More |
| ECCN | EAR99 |
Product Details
Benefits
- Power Dense Footprint Enables Compact Systems
- Offset Terminal Layout Simplifies Bus Bar Design and Reduces System Stray Inductance
- Low Inductance Design Enables Fast Switching to Reduce Dynamic Losses
- SiN AMB Substrate and High Reliability Solders Enhance Lifetime
- Direct Gate Driver Mating Enables Compact Design with Low Inductance
Typical Applications
- Traction Drives
- Motor Drives
- UPS
- EV Chargers
- Industrial Automation & Testing
- Power Supplies
- More Electric Aircraft and eVTOL
- Energy Generation/Smart Grids/Smart Energy
Featured Resources
Design Tools
Technical Support
Featured Documents
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name | Last Updated |
|---|---|---|
| Data Sheets | 06/2024 | |
| User Guide | 01/2024 | |
| User Guide | 01/2024 | |
| User Guide | 01/2024 | |
| User Guide | 12/2023 | |
| User Guide | 10/2023 | |
| User Guide | 09/2023 | |
| Application Notes | 03/2024 | |
| Application Notes | 01/2024 | |
| Application Notes | 11/2023 | |
| Application Notes | 08/2023 | |
| Application Notes | 01/2023 | |
| Application Notes | 11/2021 | |
| Articles and Papers | 12/2022 | |
| Product Catalog | 05/2024 | |
| Sales Sheets & Flyers | 01/2024 | |
| Sales Sheets & Flyers | 01/2024 | |
| Sales Sheets & Flyers | 06/2022 | |
| Sales Sheets & Flyers | 04/2022 | |
| Sales Sheets & Flyers | 03/2022 | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 04/2024 |
| Sales Terms | 12/2021 |
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