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Solar panels with wind turbines behind them representing how Wolfspeed’s SiC power products enable solutions that are more efficient than silicon.
Renewable Energy

Energy Storage Systems

Wolfspeed Silicon Carbide is uniquely capable of incredible reliability and efficiency, even in the most demanding power applications.

Wolfspeed SiC for Energy Storage Systems

Wind and solar power paired with lithium-ion battery installations is one of the fastest-growing solutions in the category, and Wolfspeed’s wide-bandgap Silicon Carbide (SiC) technology is in the core of these solutions. Studies by the Advanced Research Projects Agency-Energy (ARPA-E) have established that Wolfspeed’s Silicon Carbide power semiconductors enable solutions that are more efficient than silicon and can handle grid-scale voltages with increased reliability and performance.

Wolfspeed CRD300DA12E-XM3 - 300kW Three-Phase Inverter
Wolfspeed's 300kW XM3 Three-Phase Inverter Reference Design

Improved Reliability, Cleaner Power from Wolfspeed Silicon Carbide

Modern energy storage systems must be able to handle an incredibly high level of current and do so reliably and consistently. They must also be able to release this power when it’s needed, an action that requires outstanding performance. Wolfspeed SiC is the gold-standard technology for energy storage systems because when compared with traditional silicon, Wolfspeed Silicon Carbide MOSFETs and diodes offer higher performance and lower losses while allowing engineers to create systems that use fewer components, thereby keeping overall system size and cost down. 

Illustrated flow chart that shows how Wolfspeed silicon carbide is used to store solar energy for use in home appliances
Energy Storage System

When You Need Power You Can Rely on, Choose Wolfspeed

Alternative energy systems are an alternative only when they can be counted on, which is why Wolfspeed is a great choice. Wolfspeed SiC’s robust performance has proven its value time and again, with billions of field hours for our most popular SiC components.
Up To
30%
Lower Losses
Up To
50%
Higher Power Density
Up To
15%
System Cost Savings

1200V Discrete Silicon Carbide MOSFETs for Energy Storage Systems

View All Discrete SiC MOSFETs
Product SKU
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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
CAD Model
C3M0350120J
1200 V
350 mΩ
Gen 3
7.2 A
13 nC
20 pF
40.8 W
150 °C
TO-263-7
C3M0350120D
1200 V
350 mΩ
Gen 3
7.6 A
19 nC
20 pF
50 W
150 °C
TO-247-3
C3M0160120D
1200 V
160 mΩ
Gen 3
17 A
38 nC
39 pF
97 W
150 °C
TO-247-3
C3M0160120J
1200 V
160 mΩ
Gen 3
17 A
24 nC
39 pF
90 W
150 °C
TO-263-7
C3M0075120D
1200 V
75 mΩ
Gen 3
30 A
54 nC
58 pF
113.6 W
150 °C
TO-247-3
C3M0075120J
1200 V
75 mΩ
Gen 3
30 A
51 nC
58 pF
113.6 W
150 °C
TO-263-7
C3M0075120K
1200 V
75 mΩ
Gen 3
30 A
51 nC
58 pF
113.6 W
150 °C
TO-247-4
C3M0032120D
1200 V
32 mΩ
Gen 3
63 A
114 nC
129 pF
283 W
175 °C
TO-247-3
C3M0032120K
1200 V
32 mΩ
Gen 3
63 A
118 nC
129 pF
283 W
175 °C
TO-247-4
C3M0040120J1
New
1200 V
40 mΩ
Gen 3
64 A
61 nC
94 pF
272 W
150 °C
TO-263-7
C3M0040120D
1200 V
40 mΩ
Gen 3
66 A
101 nC
103 pF
326 W
175 °C
TO-247-3
C3M0040120K
1200 V
40 mΩ
Gen 3
66 A
99 nC
103 pF
326 W
175 °C
TO-247-4
C3M0032120J1
1200 V
32 mΩ
Gen 3
68 A
111 nC
133 pF
277 W
150 °C
TO-263-7
C3M0025065J1
650 V
25 mΩ
Gen 3
80 A
109 nC
178 pF
271 W
150 °C
TO-263-7
C3M0021120D
1200 V
21 mΩ
Gen 3
81 A
160 nC
180 pF
469 W
175 °C
TO-247-3
C3M0021120K
1200 V
21 mΩ
Gen 3
100 A
162 nC
180 pF
469 W
175 °C
TO-247-4
C3M0016120D
1200 V
16 mΩ
Gen 3
115 A
207 nC
230 pF
556 W
175 °C
TO-247-3
C3M0016120K
1200 V
16 mΩ
Gen 3
115 A
211 nC
230 pF
556 W
175 °C
TO-247-4

1200V Discrete Silicon Carbide Schottky Diodes for Energy Storage Systems

View All Discrete SiC Schottky Diodes
Product SKU
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Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
CAD Model
C4D02120A
1200 V
2 A
Gen 4
1.4 V
2 A
11 nC
60 W
TO-220-2
Industrial
C4D02120E
1200 V
2 A
Gen 4
1.4 V
2 A
11 nC
52 W
TO-252-2
Industrial
E4D02120E
1200 V
2 A
Gen 4
1.4 V
2 A
16 nC
50 W
TO-252-2
Automotive
C4D05120A
1200 V
5 A
Gen 4
1.4 V
5 A
27 nC
81 W
TO-220-2
Industrial
C4D05120E
1200 V
5 A
Gen 4
1.4 V
5 A
27 nC
97 W
TO-252-2
Industrial
C4D08120A
1200 V
8 A
Gen 4
1.5 V
8 A
37 nC
120 W
TO-220-2
Industrial
C4D08120E
1200 V
8 A
Gen 4
1.5 V
8 A
37 nC
137 W
TO-252-2
Industrial
E4D10120A
1200 V
10 A
Gen 4
1.5 V
10 A
56 nC
166 W
TO-220-2
Automotive
C4D10120A
1200 V
10 A
Gen 4
1.5 V
10 A
52 nC
136 W
TO-220-2
Industrial
C4D10120D
1200 V
10 A
Gen 4
1.4 V
10 A
54 nC
187 W
TO-247-3
Industrial
C4D10120E
1200 V
10 A
Gen 4
1.5 V
10 A
52 nC per leg
170 W
TO-252-2
Industrial
C4D10120H
1200 V
10 A
Gen 4
1.4 V
10 A
52 nC
136 W
TO-247-2
Industrial
C4D15120A
1200 V
15 A
Gen 4
1.6 V
15 A
77.5 nC
192 W
TO-220-2
Industrial
C4D15120D
1200 V
15 A
Gen 4
1.5 V
15 A
37 nC per leg
270 W
TO-247-3
Industrial
C4D15120H
1200 V
15 A
Gen 4
1.5 V
15 A
77.5 nC
174.5 W
TO-247-2
Industrial
E4D20120D
1200 V
20 A
Gen 4
1.5 V
20 A
52 nC per leg
176 W
TO-247-3
Automotive
E4D20120A
1200 V
20 A
Gen 4
1.5 V
20 A
99 nC
242 W
TO-220-2
Automotive
C4D20120A
1200 V
20 A
Gen 4
1.5 V
20 A
99 nC
242 W
TO-220-2
Industrial
C4D20120D
1200 V
20 A
Gen 4
1.5 V per leg
20 A
52 nC per leg
352 W
TO-247-3
Industrial
C4D20120H
1200 V
20 A
Gen 4
1.5 V
20 A
99 nC
246 W
TO-247-2
Industrial
E4D20120G
1200 V
20 A
Gen 4
1.5 V
20 A
110 nC
250 W
TO-263-2
Automotive
C4D30120H
New
1200 V
30 A
Gen 4
1.5 V
30 A
152 nC
441 W
TO-247-2
Industrial
C4D30120D
1200 V
30 A
Gen 4
1.6 V per leg
30 A
77.5 nC per leg
440 W
TO-247-3
Industrial
C4D40120H
New
1200 V
40 A
Gen 4
1.5 V
40 A
167 nC
667 W
TO-247-2
Industrial
C4D40120D
1200 V
40 A
Gen 4
1.5 V per leg
40 A
99 nC per leg
532 W
TO-247-3
Industrial

650V Discrete Silicon Carbide MOSFETs for Energy Storage Systems

View All Discrete SiC MOSFETs
Product SKU
Buy Online
Request Sample
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
CAD Model
PC3M0045065L
650 V
45 mΩ
Gen 3
51 A
59 nC
160 W
150 °C
TOLL
PC3M0060065L
650 V
60 mΩ
Gen 3
38 A
46 nC
126 W
150 °C
TOLL
PC3M0120065L
650 V
120 mΩ
Gen 3
23 A
25 nC
89 W
150 °C
TOLL
C3M0025065J1
650 V
25 mΩ
Gen 3
80 A
109 nC
271 W
150 °C
TO-263-7
C3M0060065J
650 V
60 mΩ
Gen 3
36 A
46 nC
136 W
175 °C
TO-263-7
C3M0060065K
650 V
60 mΩ
Gen 3
37 A
46 nC
150 W
175 °C
TO-247-4
C3M0060065D
650 V
60 mΩ
Gen 3
29 A
46 nC
150 W
175 °C
TO-247-3
C3M0015065K
650 V
15 mΩ
Gen 3
120 A
188 nC
416 W
175 °C
TO-247-4
C3M0015065D
650 V
15 mΩ
Gen 3
120 A
188 nC
416 W
175 °C
TO-247-3
C3M0120065K
650 V
120 mΩ
Gen 3
22 A
28 nC
98 W
175 °C
TO-247-4
C3M0120065J
650 V
120 mΩ
Gen 3
21 A
26 nC
86 W
175 °C
TO-263-7
C3M0120065D
650 V
120 mΩ
Gen 3
22 A
28 nC
98 W
175 °C
TO-247-3
C3M0045065K
650 V
45 mΩ
Gen 3
49 A
63 nC
176 W
175 °C
TO-247-4
C3M0045065D
650 V
45 mΩ
Gen 3
49 A
63 nC
176 W
175 °C
TO-247-3
C3M0025065K
650 V
25 mΩ
Gen 3
97 A
112 nC
326 W
175 °C
TO-247-4
C3M0025065D
650 V
25 mΩ
Gen 3
97 A
108 nC
325 W
175 °C
TO-247-3
C3M0045065J1
New
650 V
45 mΩ
Gen 3
47 A
61 nC
147 W
150 °C
TO-263-7

650V Discrete Silicon Carbide Schottky Diodes for Energy Storage Systems

View All Discrete SiC Schottky Diodes
Product SKU
Buy Online
Request Sample
Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
CAD Model
C3D02065E
650 V
2 A
Gen 3
1.5 V
2 A
4.8 nC
39.5 W
TO-252-2
Industrial
C3D03065E
650 V
3 A
Gen 3
1.5 V
3 A
6.7 nC
53 W
TO-252-2
Industrial
C6D04065A
650 V
4 A
Gen 6
1.27 V
4 A
16 nC
73 W
TO-220-2
Industrial
C6D04065E
650 V
4 A
Gen 6
1.27 V
4 A
16 nC
52 W
TO-252-2
Industrial
C3D04065A
650 V
4 A
Gen 3
1.5 V
4 A
10 nC
52 W
TO-220-2
Industrial
C3D04065E
650 V
4 A
Gen 3
1.5 V
4 A
8.5 nC
75 W
TO-252-2
Industrial
C6D06065G
650 V
6 A
Gen 6
1.27 V
6 A
22 nC
73 W
TO-263-2
Industrial
C3D06065I
650 V
6 A
Gen 3
1.5 V
6 A
15 nC
45.5 W
TO-220 Isolated
Industrial
C6D06065A
650 V
6 A
Gen 6
1.27 V
6 A
23 nC
73 W
TO-220-2
Industrial
C6D06065E
650 V
6 A
Gen 6
1.27 V
6 A
23 nC
68 W
TO-252-2
Industrial
C3D06065A
650 V
6 A
Gen 3
1.5 V
6 A
15 nC
88 W
TO-220-2
Industrial
C3D06065E
650 V
6 A
Gen 3
1.5 V
6 A
15 nC
100 W
TO-252-2
Industrial
C6D06065Q
New
650 V
6 A
Gen 6
1.27 V
6 A
23 nC
69 W
QFN
Industrial
C6D08065G
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
92 W
TO-263-2
Industrial
E3D08065G
650 V
8 A
Gen 3
1.5 V
8 A
50 nC
176 W
TO-263-2
Automotive
C3D08065I
650 V
8 A
Gen 3
1.5 V
8 A
21 nC
48 W
TO-220 Isolated
Industrial
C6D08065A
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
92.6 W
TO-220-2
Industrial
C6D08065E
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
85 W
TO-252-2
Industrial
C3D08065A
650 V
8 A
Gen 3
1.5 V
8 A
20 nC
107 W
TO-220-2
Industrial
C3D08065E
650 V
8 A
Gen 3
1.5 V
8 A
20 nC
120 W
TO-252-2
Industrial
C6D08065Q
New
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
92 W
QFN
Industrial
C6D10065G
650 V
10 A
Gen 6
1.27 V
10 A
34 nC
108 W
TO-263-2
Industrial
C3D10065E
650 V
10 A
Gen 3
1.5 V
10 A
24 nC
150 W
TO-252-2
Industrial
C3D10065I
650 V
10 A
Gen 3
1.5 V
10 A
25 nC
60 W
TO-220 Isolated
Industrial
C6D10065A
650 V
10 A
Gen 6
1.27 V
10 A
35 nC
109 W
TO-220-2
Industrial
C6D10065E
650 V
10 A
Gen 6
1.27 V
10 A
34 nC
99 W
TO-252-2
Industrial
C3D10065A
650 V
10 A
Gen 3
1.5 V
10 A
24 nC
136.5 W
TO-220-2
Industrial
C6D10065Q
New
650 V
10 A
Gen 6
1.27 V
10 A
34 nC
119 W
QFN
Industrial
C3D12065A
650 V
12 A
Gen 3
1.5 V
12 A
34 nC
143 W
TO-220-2
Industrial
C3D16065D1
650 V
16 A
Gen 3
1.5 V
16 A
40 nC
173 W
TO-247-3
Industrial
C3D16065A
650 V
16 A
Gen 3
1.5 V
16 A
44 nC
150 W
TO-220-2
Industrial
C6D16065D
650 V
16 A
Gen 6
1.27 V
16 A
29 nC
100 W
TO-247-3
Industrial
C3D16065D
650 V
16 A
Gen 3
1.5 V per leg
16 A
21 nC per leg
200 W
TO-247-3
Industrial
CVFD20065A
650 V
20 A
Gen 5
1.35 V
20 A
62 nC
187.5 W
TO-220-2
Industrial
C6D20065D
650 V
20 A
Gen 6
1.27 V
20 A
35 nC
116 W
TO-247-3
Industrial
C3D20065D
650 V
20 A
Gen 3
1.5 V per leg
20 A
25 nC per leg
500 W
TO-247-3
Industrial
E3D20065D
650 V
20 A
Gen 3
1.5 V
20 A
110 nC
250 W
TO-247-3
Automotive
C6D20065A
New
650 V
20 A
Gen 6
1.27 V
21 A
62 nC
166 W
TO-220-2
Industrial
C3D30065D
650 V
30 A
Gen 3
1.5 V
30 A
44.5 nC per leg
300 W
TO-247-3
Industrial
E3D30065D
650 V
30 A
Gen 3
1.5 V
30 A
43 nC
179 W
TO-247-3
Automotive
C5D50065D
650 V
50 A
Gen 5
1.5 V
50 A
110 nC
300 W
TO-247-3
Industrial

Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family for Energy Storage Systems

View All SiC Power Modules
Product SKU
Buy Online
Request Sample
Data Sheet
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
CAD Model
CAB006M12GM3
GM3
Half-Bridge
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB006A12GM3
GM3
Half Bridge (AlN substrate)
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB008A12GM3
GM3
Half Bridge (AlN substrate)
1200 V
194 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB008M12GM3
GM3
Half-Bridge
1200 V
146 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
CAB011M12FM3
FM3
Half-Bridge
1200 V
105 A
11 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CAB016M12FM3
FM3
Half-Bridge
1200 V
78 A
16 mΩ
Gen 3 MOS
150 °C
CCB021M12FM3
FM3
Six-pack (three-phase)
1200 V
51 A
21 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
CCB032M12FM3
FM3
Six-pack (three-phase)
1200 V
40 A
32 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm

62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules for Energy Storage Systems

View All SiC Power Modules
Product SKU
Buy Online
Request Sample
Data Sheet
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
CAD Model
WAS175M12BM3
New
62mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
106 x 62 x 30 mm
CAS175M12BM3
New
62mm
Half-Bridge
1200 V
175 A
8 mΩ
Gen 3 MOS + Diodes
150 °C
106 x 62 x 30 mm
WAB300M12BM3
62mm
Half-Bridge
1200 V
300 A
4 mΩ
Gen 3 MOS
175 °C
105 x 62 x 31 mm