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Solar panels with wind turbines behind them representing how Wolfspeed’s SiC power products enable solutions that are more efficient than silicon.
Renewable Energy

Energy Storage Systems

Wolfspeed Silicon Carbide is uniquely capable of incredible reliability and efficiency, even in the most demanding power applications.

Overview

Wolfspeed SiC for Energy Storage Systems

Wind and solar power paired with lithium-ion battery installations is one of the fastest-growing solutions in the category, and Wolfspeed’s wide-bandgap Silicon Carbide (SiC) technology is in the core of these solutions. Studies by the Advanced Research Projects Agency-Energy (ARPA-E) have established that Wolfspeed’s Silicon Carbide power semiconductors enable solutions that are more efficient than silicon and can handle grid-scale voltages with increased reliability and performance.

Wolfspeed CRD300DA12E-XM3 - 300kW Three-Phase Inverter
Wolfspeed's 300kW XM3 Three-Phase Inverter Reference Design

Improved Reliability, Cleaner Power from Wolfspeed Silicon Carbide

Modern energy storage systems must be able to handle an incredibly high level of current and do so reliably and consistently. They must also be able to release this power when it’s needed, an action that requires outstanding performance. Wolfspeed SiC is the gold-standard technology for energy storage systems because when compared with traditional silicon, Wolfspeed Silicon Carbide MOSFETs and diodes offer higher performance and lower losses while allowing engineers to create systems that use fewer components, thereby keeping overall system size and cost down. 


Illustrated flow chart that shows how Wolfspeed silicon carbide is used to store solar energy for use in home appliances
Energy Storage System

When You Need Power You Can Rely on, Choose Wolfspeed

Alternative energy systems are an alternative only when they can be counted on, which is why Wolfspeed is a great choice. Wolfspeed SiC’s robust performance has proven its value time and again, with billions of field hours for our most popular SiC components.
Up To
30%
Lower Losses
Up To
50%
Higher Power Density
Up To
15%
System Cost Savings

1200V Discrete Silicon Carbide MOSFETs for Energy Storage Systems

View All Discrete SiC MOSFETs
Product SKU
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Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
CAD Model
C3M0160120D
1200 V
160 mΩ
Gen 3
38 nC
39 pF
97 W
150 °C
TO-247-3
1200 V
160 mΩ
Gen 3
24 nC
39 pF
90 W
150 °C
TO-263-7
1200 V
350 mΩ
Gen 3
19 nC
20 pF
50 W
150 °C
TO-247-3
1200 V
350 mΩ
Gen 3
13 nC
20 pF
40.8 W
150 °C
TO-263-7
1200 V
75 mΩ
Gen 3
30 A
54 nC
58 pF
113.6 W
150 °C
TO-247-3
1200 V
75 mΩ
Gen 3
30 A
51 nC
58 pF
113.6 W
150 °C
TO-263-7
1200 V
75 mΩ
Gen 3
30 A
51 nC
58 pF
113.6 W
150 °C
TO-247-4
1200 V
32 mΩ
Gen 3
63 A
114 nC
129 pF
283 W
175 °C
TO-247-3
1200 V
32 mΩ
Gen 3
63 A
118 nC
129 pF
283 W
175 °C
TO-247-4
C3M0040120J1
New
1200 V
40 mΩ
Gen 3
64 A
61 nC
94 pF
272 W
150 °C
TO-263-7
1200 V
40 mΩ
Gen 3
66 A
101 nC
103 pF
326 W
175 °C
TO-247-3
1200 V
40 mΩ
Gen 3
66 A
99 nC
103 pF
326 W
175 °C
TO-247-4
1200 V
32 mΩ
Gen 3
68 A
111 nC
133 pF
277 W
150 °C
TO-263-7
650 V
25 mΩ
Gen 3
80 A
109 nC
178 pF
271 W
150 °C
TO-263-7
1200 V
21 mΩ
Gen 3
81 A
160 nC
180 pF
469 W
175 °C
TO-247-3
1200 V
21 mΩ
Gen 3
100 A
162 nC
180 pF
469 W
175 °C
TO-247-4
1200 V
16 mΩ
Gen 3
115 A
207 nC
230 pF
556 W
175 °C
TO-247-3
1200 V
16 mΩ
Gen 3
115 A
211 nC
230 pF
556 W
175 °C
TO-247-4

1200V Discrete Silicon Carbide Schottky Diodes for Energy Storage Systems

Product SKU
Buy Online
Request Sample
Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
CAD Model
1200 V
2 A
Gen 4
1.4 V
2 A
11 nC
60 W
TO-220-2
Industrial
1200 V
2 A
Gen 4
1.4 V
2 A
11 nC
52 W
TO-252-2
Industrial
1200 V
2 A
Gen 4
1.4 V
2 A
16 nC
50 W
TO-252-2
Automotive
1200 V
5 A
Gen 4
1.4 V
5 A
27 nC
81 W
TO-220-2
Industrial
1200 V
5 A
Gen 4
1.4 V
5 A
27 nC
97 W
TO-252-2
Industrial
1200 V
8 A
Gen 4
1.5 V
8 A
37 nC
120 W
TO-220-2
Industrial
1200 V
8 A
Gen 4
1.5 V
8 A
37 nC
137 W
TO-252-2
Industrial
1200 V
10 A
Gen 4
1.5 V
10 A
56 nC
166 W
TO-220-2
Automotive
1200 V
10 A
Gen 4
1.5 V
10 A
52 nC
136 W
TO-220-2
Industrial
1200 V
10 A
Gen 4
1.4 V
10 A
54 nC
187 W
TO-247-3
Industrial
1200 V
10 A
Gen 4
1.5 V
10 A
52 nC per leg
170 W
TO-252-2
Industrial
1200 V
10 A
Gen 4
1.4 V
10 A
52 nC
136 W
TO-247-2
Industrial
1200 V
15 A
Gen 4
1.6 V
15 A
77.5 nC
192 W
TO-220-2
Industrial
1200 V
15 A
Gen 4
1.5 V
15 A
37 nC per leg
270 W
TO-247-3
Industrial
1200 V
15 A
Gen 4
1.5 V
15 A
77.5 nC
174.5 W
TO-247-2
Industrial
1200 V
20 A
Gen 4
1.5 V
20 A
52 nC per leg
176 W
TO-247-3
Automotive
1200 V
20 A
Gen 4
1.5 V
20 A
99 nC
242 W
TO-220-2
Automotive
1200 V
20 A
Gen 4
1.5 V
20 A
99 nC
242 W
TO-220-2
Industrial
1200 V
20 A
Gen 4
1.5 V per leg
20 A
52 nC per leg
352 W
TO-247-3
Industrial
1200 V
20 A
Gen 4
1.5 V
20 A
99 nC
246 W
TO-247-2
Industrial
1200 V
20 A
Gen 4
1.5 V
20 A
110 nC
TO-263-2
Automotive
1200 V
30 A
Gen 4
1.5 V
30 A
152 nC
441 W
TO-247-2
Industrial
1200 V
30 A
Gen 4
1.6 V per leg
30 A
77.5 nC per leg
440 W
TO-247-3
Industrial
1200 V
40 A
Gen 4
1.5 V
40 A
167 nC
667 W
TO-247-2
Industrial
1200 V
40 A
Gen 4
1.5 V per leg
40 A
99 nC per leg
532 W
TO-247-3
Industrial

650V Discrete Silicon Carbide MOSFETs for Energy Storage Systems

Product SKU
Buy Online
Request Sample
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
CAD Model
650 V
45 mΩ
Gen 3
51 A
59 nC
160 W
150 °C
TOLL
650 V
60 mΩ
Gen 3
38 A
46 nC
126 W
150 °C
TOLL
650 V
120 mΩ
Gen 3
23 A
25 nC
89 W
150 °C
TOLL
650 V
25 mΩ
Gen 3
80 A
109 nC
271 W
150 °C
TO-263-7
650 V
60 mΩ
Gen 3
36 A
46 nC
136 W
175 °C
TO-263-7
650 V
60 mΩ
Gen 3
37 A
46 nC
150 W
175 °C
TO-247-4
650 V
60 mΩ
Gen 3
29 A
46 nC
150 W
175 °C
TO-247-3
650 V
15 mΩ
Gen 3
120 A
188 nC
416 W
175 °C
TO-247-4
650 V
15 mΩ
Gen 3
120 A
188 nC
416 W
175 °C
TO-247-3
650 V
120 mΩ
Gen 3
22 A
28 nC
98 W
175 °C
TO-247-4
650 V
120 mΩ
Gen 3
21 A
26 nC
86 W
175 °C
TO-263-7
650 V
120 mΩ
Gen 3
22 A
28 nC
98 W
175 °C
TO-247-3
650 V
45 mΩ
Gen 3
49 A
63 nC
176 W
175 °C
TO-247-4
650 V
45 mΩ
Gen 3
49 A
63 nC
176 W
175 °C
TO-247-3
650 V
25 mΩ
Gen 3
97 A
112 nC
326 W
175 °C
TO-247-4
650 V
25 mΩ
Gen 3
97 A
175 °C
TO-247-3
650 V
45 mΩ
Gen 3
47 A
61 nC
147 W
150 °C
TO-263-7

650V Discrete Silicon Carbide Schottky Diodes for Energy Storage Systems

Product SKU
Buy Online
Request Sample
Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
CAD Model
650 V
2 A
Gen 3
1.5 V
2 A
4.8 nC
39.5 W
TO-252-2
Industrial
650 V
3 A
Gen 3
1.5 V
3 A
6.7 nC
53 W
TO-252-2
Industrial
650 V
4 A
Gen 6
1.27 V
4 A
16 nC
73 W
TO-220-2
Industrial
650 V
4 A
Gen 6
1.27 V
4 A
16 nC
52 W
TO-252-2
Industrial
650 V
4 A
Gen 3
1.5 V
4 A
10 nC
52 W
TO-220-2
Industrial
650 V
4 A
Gen 3
1.5 V
4 A
8.5 nC
75 W
TO-252-2
Industrial
650 V
6 A
Gen 6
1.27 V
6 A
22 nC
73 W
TO-263-2
Industrial
650 V
6 A
Gen 3
1.5 V
6 A
15 nC
45.5 W
TO-220 Isolated
Industrial
650 V
6 A
Gen 6
1.27 V
6 A
23 nC
73 W
TO-220-2
Industrial
650 V
6 A
Gen 6
1.27 V
6 A
23 nC
68 W
TO-252-2
Industrial
650 V
6 A
Gen 3
1.5 V
6 A
15 nC
88 W
TO-220-2
Industrial
650 V
6 A
Gen 3
1.5 V
6 A
15 nC
100 W
TO-252-2
Industrial
650 V
6 A
Gen 6
1.27 V
6 A
23 nC
69 W
QFN
Industrial
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
92 W
TO-263-2
Industrial
650 V
8 A
Gen 3
1.5 V
8 A
176 W
TO-263-2
Automotive
650 V
8 A
Gen 3
1.5 V
8 A
21 nC
48 W
TO-220 Isolated
Industrial
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
92.6 W
TO-220-2
Industrial
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
85 W
TO-252-2
Industrial
650 V
8 A
Gen 3
1.5 V
8 A
20 nC
107 W
TO-220-2
Industrial
650 V
8 A
Gen 3
1.5 V
8 A
20 nC
120 W
TO-252-2
Industrial
650 V
8 A
Gen 6
1.27 V
8 A
29 nC
92 W
QFN
Industrial
650 V
10 A
Gen 6
1.27 V
10 A
34 nC
108 W
TO-263-2
Industrial
650 V
10 A
Gen 3
1.5 V
10 A
24 nC
150 W
TO-252-2
Industrial
650 V
10 A
Gen 3
1.5 V
10 A
25 nC
60 W
TO-220 Isolated
Industrial
650 V
10 A
Gen 6
1.27 V
10 A
35 nC
109 W
TO-220-2
Industrial
650 V
10 A
Gen 6
1.27 V
10 A
34 nC
99 W
TO-252-2
Industrial
650 V
10 A
Gen 3
1.5 V
10 A
24 nC
136.5 W
TO-220-2
Industrial
650 V
10 A
Gen 6
1.27 V
10 A
34 nC
119 W
QFN
Industrial
650 V
12 A
Gen 3
1.5 V
12 A
34 nC
143 W
TO-220-2
Industrial
650 V
16 A
Gen 3
1.5 V
16 A
40 nC
173 W
TO-247-3
Industrial
650 V
16 A
Gen 3
1.5 V
16 A
44 nC
150 W
TO-220-2
Industrial
650 V
16 A
Gen 6
1.27 V
16 A
29 nC
100 W
TO-247-3
Industrial
650 V
16 A
Gen 3
1.5 V per leg
16 A
21 nC per leg
200 W
TO-247-3
Industrial
650 V
20 A
Gen 5
1.35 V
20 A
62 nC
187.5 W
TO-220-2
Industrial
650 V
20 A
Gen 6
1.27 V
20 A
35 nC
116 W
TO-247-3
Industrial
650 V
20 A
Gen 3
1.5 V per leg
20 A
25 nC per leg
500 W
TO-247-3
Industrial
650 V
20 A
Gen 3
1.5 V
20 A
110 nC
TO-247-3
Automotive
650 V
30 A
Gen 3
1.5 V
30 A
44.5 nC per leg
300 W
TO-247-3
Industrial
650 V
30 A
Gen 3
1.5 V
30 A
TO-247-3
Automotive
650 V
50 A
Gen 5
1.5 V
50 A
110 nC
300 W
TO-247-3
Industrial

Wolfspeed WolfPACK™ Silicon Carbide Power Modules Family for Energy Storage Systems

Product SKU
Buy Online
Request Sample
Data Sheet
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
CAD Model
GM3
Half-Bridge
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM3
Half Bridge (AlN substrate)
1200 V
200 A
6 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM3
Half Bridge (AlN substrate)
1200 V
194 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
GM3
Half-Bridge
1200 V
146 A
8 mΩ
Gen 3 MOS
150 °C
62.8 mm x 56.7 mm
FM3
Half-Bridge
1200 V
105 A
11 mΩ
Gen 3 MOS
150 °C
FM3
Half-Bridge
1200 V
78 A
16 mΩ
Gen 3 MOS
150 °C
62.8 mm x 33.8 mm
FM3
Six-pack (three-phase)
1200 V
51 A
21 mΩ
Gen 3 MOS
150 °C
FM3
Six-pack (three-phase)
1200 V
40 A
32 mΩ
Gen 3 MOS
150 °C

62mm (BM2 & BM3) Silicon Carbide Half-Bridge Power Modules for Energy Storage Systems

Product SKU
Buy Online
Request Sample
Data Sheet
Package
Configuration
Blocking Voltage
Current Rating
RDS(ON) at 25°C
Generation
Maximum Junction Temperature
Module Size
View Product
CAD Model
62mm
Half-Bridge
1200 V
120 A
13 mΩ
Gen 2 MOS + Diodes
150 °C
106 x 62 x 30 mm
62mm
Half-Bridge
1700 V
225 A
8 mΩ
Gen 2 MOS + Diodes
150 °C
106 x 62 x 30 mm