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Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

1200 V Discrete Silicon Carbide MOSFETs

Broadest portfolio of 1200 V Silicon Carbide (SiC) power MOSFETs in the industry
Wolfspeed's family of 1200 V Silicon Carbide (SiC) MOSFETs are optimized for use in high power applications such as UPS; motor control and drives; switched-mode power supplies; solar and energy storage systems; electric vehicle charging; high-voltage DC/DC converters; and more. Based on 3rd generation technology; the wide variety of on-resistances and package options enables designers to select the right part for their applications. Pairing Wolfspeed's 1200 V Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency for demanding applications.

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1200 V Discrete Silicon Carbide MOSFETs

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1200 V Discrete Silicon Carbide MOSFETs - Filter By

1200 V Discrete Silicon Carbide MOSFETs

Product SKU
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Data Sheet
CAD Model
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Maximum Junction Temperature
Package
Qualification
C3M0016120D
Active
1200 V
16 mΩ
115 A
175 °C
TO-247-3
Industrial
C3M0021120D
Active
1200 V
21 mΩ
81 A
175 °C
TO-247-3
Industrial
C2M0025120D
Active
1200 V
25 mΩ
63 A
150 °C
TO-247-3
Industrial
C3M0032120D
Active
1200 V
32 mΩ
63 A
175 °C
TO-247-3
Industrial
C3M0040120D
Active
1200 V
40 mΩ
66 A
175 °C
TO-247-3
Industrial
C2M0040120D
Active
1200 V
40 mΩ
60 A
150 °C
TO-247-3
Industrial
C3M0075120D
Active
1200 V
75 mΩ
30 A
150 °C
TO-247-3
Industrial
C3M0075120D-A
Active
1200 V
75 mΩ
32 A
175 °C
TO-247-3
Industrial
C2M0080120D
Active
1200 V
80 mΩ
36 A
150 °C
TO-247-3
Industrial
C2M0160120D
Active
1200 V
160 mΩ
19 A
150 °C
TO-247-3
Industrial
C3M0160120D
Active
1200 V
160 mΩ
17 A
150 °C
TO-247-3
Industrial
C2M0280120D
Active
1200 V
320 mΩ
10 A
150 °C
TO-247-3
Industrial
C3M0350120D
Active
1200 V
350 mΩ
7.6 A
150 °C
TO-247-3
Industrial
C3M0016120K
Active
1200 V
16 mΩ
115 A
175 °C
TO-247-4
Industrial
C3M0021120K
Active
1200 V
21 mΩ
100 A
175 °C
TO-247-4
Industrial
C3M0032120K
Active
1200 V
32 mΩ
63 A
175 °C
TO-247-4
Industrial
C3M0040120K
Active
1200 V
40 mΩ
66 A
175 °C
TO-247-4
Industrial
C3M0075120K
Active
1200 V
75 mΩ
32 A
150 °C
TO-247-4
Industrial
C3M0075120K-A
Active
1200 V
75 mΩ
32 A
175 °C
TO-247-4
Industrial
C3M0016120K1
New
Active
1200 V
16 mΩ
125 A
175 °C
TO-247-4 LP
Industrial
C3M0021120K1
New
Active
1200 V
21 mΩ
104 A
175 °C
TO-247-4 LP
Industrial
C3M0032120K1
New
Active
1200 V
32 mΩ
67 A
175 °C
TO-247-4 LP
Industrial
C3M0040120K1
New
Active
1200 V
40 mΩ
57 A
175 °C
TO-247-4 LP
Industrial
C3M0075120K1
New
Active
1200 V
75 mΩ
32 A
175 °C
TO-247-4 LP
Industrial
C3M0160120K1
New
Active
1200 V
160 mΩ
18 A
175 °C
TO-247-4 LP
Industrial
C3M0075120J
Active
1200 V
75 mΩ
30 A
150 °C
TO-263-7
Industrial
C3M0160120J
Active
1200 V
160 mΩ
17 A
150 °C
TO-263-7
Industrial
C3M0350120J
Active
1200 V
350 mΩ
7.2 A
150 °C
TO-263-7
Industrial
C3M0021120J2
New
Active
1200 V
21 mΩ
114 A
175 °C
TO-263-7 XL
Industrial
C3M0032120J1
Active
1200 V
32 mΩ
68 A
150 °C
TO-263-7 XL
Industrial
C3M0032120J2
New
Active
1200 V
32 mΩ
74 A
175 °C
TO-263-7 XL
Industrial
C3M0040120J1
Active
1200 V
40 mΩ
64 A
150 °C
TO-263-7 XL
Industrial
C3M0040120J2
New
Active
1200 V
40 mΩ
63 A
175 °C
TO-263-7 XL
Industrial
C3M0075120J2
New
Active
1200 V
75 mΩ
34 A
175 °C
TO-263-7 XL
Industrial

Product Details

Features
  • Stable RDS(ON) over temperature
  • Available in package options with separate Kelvin source pin
  • Extremely fast switching
  • Reduction of heat-sink requirements

 

Benefits
  • Easier to drive (+15V gate drive)
  • Improved system-level efficiency
  • Rugged body diode (no need for external diode)
  • Avalanche ruggedness
Typical Applications
  • Solar inverters and energy storage
  • Onboard and fast DC EV-Charging Systems
  • Motor control and drives
  • Welding and inductive heating
  • Auxiliary power supplies
  • High-voltage DC/DC converters

 

Documents, Tools & Support

Documents

Document Type
Document Name
Last Updated
User Guide
03/2023
User Guide
03/2022
Application Notes
01/2024
Application Notes
01/2024
Application Notes
01/2024
Application Notes
12/2023
Application Notes
11/2023
Application Notes
05/2023
Application Notes
01/2023
Application Notes
10/2022
Application Notes
09/2022
Application Notes
02/2022
Application Notes
11/2021
Test Report
03/2022
Product Catalog
05/2024
Sales Sheets & Flyers
06/2023
Sales Sheets & Flyers
03/2022
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021

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Design Resources

Analyzing Transient Behavior Using a Double Pulse Test Simulation in LTspice

See how Wolfspeed LTspice models can make designing with silicon carbide in power electronics systems more efficient, cost-effective, and accurate. Get started optimizing your system design, without the need for physical samples or test kits.
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