Features
- Stable RDS(ON) over temperature
- Available in package options with separate Kelvin source pin
- Extremely fast switching
- Reduction of heat-sink requirements
1200 V Discrete Silicon Carbide MOSFETs
C2M0025120D
1200 V; 25 mΩ; 63 A; TO-247-3 package; Gen 2 Discrete Silicon Carbide (SiC) MOSFET
Wolfspeed’s family of 1200 V Silicon Carbide (SiC) MOSFETs are optimized for use in high power applications such as UPS; motor control and drives; switched-mode power supplies; solar and energy storage systems; electric vehicle charging; high-voltage DC/DC converters; and more.
Based on 3rd generation technology; the wide variety of on-resistances and package options enables designers to select the right part for their applications.
Pairing Wolfspeed’s 1200 V Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency for demanding applications.
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1200 V Discrete Silicon Carbide MOSFETs
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1200 V Discrete Silicon Carbide MOSFETs
Product SKU | Buy Online | Data Sheet | CAD Model | Blocking Voltage | RDS(ON) at 25°C | Generation | Current Rating | Gate Charge Total | Output Capacitance | Total Power Dissipation (PTOT) | Maximum Junction Temperature | Package | Recommended For New Design? | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
C2M0025120D | 1200 V | 25 mΩ | Gen 2 | 63 A | 161 nC | 220 pF | 463 W | 150 °C | TO-247-3 | No | Industrial |
Product Details
Benefits
- Easier to drive (+15V gate drive)
- Improved system-level efficiency
- Rugged body diode (no need for external diode)
- Avalanche ruggedness
Applications
- Solar inverters and energy storage
- Onboard and fast DC EV-Charging Systems
- Motor control and drives
- Welding and inductive heating
- Auxiliary power supplies
- High-voltage DC/DC converters
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| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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