Wolfspeed's Gen 5 SiC MOSFETs are engineered for real-world performance — not just ideal conditions. Built on optimized planar MOSFET design, Gen 5 achieves better RDS(ON) through tightened epitaxy, increased active area, and enhanced soft body diode technology. The result: lower losses, higher reliability, and greater design confidence for automotive and industrial applications.
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Maximizing Performance of 1500 V DC Bus Applications with the 2300 V SiC Modules
Article
Discover how Wolfspeed’s 2300 V silicon carbide power modules can boost efficiency and durability, while reducing costs for renewable and energy storage applications.
Key takeaways:
- Design considerations and trade-offs of 2-level SiC-based and 3-level IGBT-based inverters for ESS
- How to improve efficiency and reduce system losses for 1500 V power conversion system inverters
- How to design simpler 2-level building blocks to reduce system and installation costs for scalable power solutions