The industry's lowest on-state resistances and switching losses for maximum efficiency and power density
Wolfspeed extends its Silicon Carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V MOSFETs; enabling smaller; lighter; and highly-efficient power conversion in an even wider range of power systems. The 650 V MOSFET product family is ideal for applications including high performance industrial power supplies; server/telecom power; electric vehicle charging systems; energy storage systems; uninterruptible power supplies; and battery management systems.
Improves System Efficiency with lower switching and conduction losses
Enables high switching frequency operation
Improves System Level Power Density
Reduces System Size; Weight; and Cooling Requirements
Enables new hard switching topologies (Totem-Pole PFC)
Applications
Industrial Power Supplies
Server/Telecom
EV-Charging Systems
Energy Storage Systems (ESS)
Uninterruptible Power Supplies (UPS)
Battery Management Systems (BMS)
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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Meet key industrial low voltage motor drive energy regulations with Wolfspeed silicon carbide and enable up to 2.5% overall efficiency improvement while overcoming thermal limitations that plague traditional silicon IGBTs.
Wolfspeed SpeedVal Kit™ expands control options with NXP’s HVP-56F83783 high-voltage development card, featuring NXP’s 32-bit digital signal controllers.