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650 V Discrete Silicon Carbide MOSFETs

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
C3M0045065D
650 V; 45 mΩ; 49 A; TO-247-3 package; Gen 3 Discrete Silicon Carbide (SiC) MOSFET

Wolfspeed extends its Silicon Carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V MOSFETs; enabling smaller; lighter; and highly-efficient power conversion in an even wider range of power systems. The 650 V MOSFET product family is ideal for applications including high performance industrial power supplies; server/telecom power; electric vehicle charging systems; energy storage systems; uninterruptible power supplies; and battery management systems.

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650 V Discrete Silicon Carbide MOSFETs

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650 V Discrete Silicon Carbide MOSFETs

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C3M0045065D
650 V
45 mΩ
Gen 3
49 A
63 nC
101 pF
176 W
175 °C
TO-247-3
Yes
Industrial

Product Details

Features
  • Low On-State Resistance over Temperature
  • Low Parasitic Capacitances
  • Fast Diode with ultra low reverse recovery
  • High Temperature Operation (TJ = 175°C)
  • Kelvin Source Pin
  • Industry Standard Through-Hole & SMT Packages
  • Small form factor
  • Low lead inductance
  • Low Thermal Impedance
Benefits
  • Improves System Efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves System Level Power Density
  • Reduces System Size; Weight; and Cooling Requirements
  • Enables new hard switching topologies (Totem-Pole PFC)
Applications
  • Industrial Power Supplies
  • Server/Telecom
  • EV-Charging Systems
  • Energy Storage Systems (ESS)
  • Uninterruptible Power Supplies (UPS)
  • Battery Management Systems (BMS)

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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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Power Applications Forum
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Knowledge Center

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MOSFETs

Wolfspeed’s Silicon Carbide MOSFETs Address High-Power Application Needs

Wolfspeed’s new 3300 V Bare Die MOSFET provides the system benefits of Silicon Carbide while maintaining expected reliability and ruggedness needed for today’s medium-voltage, high-power systems such as rail traction and industrial motor drives.
Continue Reading  Technical Articles

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