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650 V Discrete Silicon Carbide MOSFETs

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0025065K
650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET
Wolfspeed extends its Silicon Carbide (SiC) technology leadership with the introduction of 3rd-Generation 650 V MOSFETs, enabling smaller, lighter, and highly-efficient power conversion in an even wider range of power systems. The 650 V MOSFET product family is ideal for applications including high performance industrial power supplies, server/telecom power, electric vehicle charging systems, energy storage systems, uninterruptible power supplies, and battery management systems.

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650 V Discrete Silicon Carbide MOSFETs

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650 V Discrete Silicon Carbide MOSFETs

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Data Sheet
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Blocking Voltage
RDS(ON) at 25°C
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Current Rating
Gate Charge Total
Output Capacitance
Total Power Dissipation (PTOT)
Maximum Junction Temperature
Package
Recommended For New Design?
Qualification
C3M0025065K
650 V
25 mΩ
Gen 3
97 A
112 nC
178 pF
326 W
175 °C
TO-247-4
Yes
Industrial

Product Details

Features
  • Low On-State Resistance over Temperature
  • Low Parasitic Capacitances
  • Fast Diode with ultra low reverse recovery
  • High Temperature Operation (TJ = 175°C)
  • Kelvin Source Pin
  • Industry Standard Through-Hole & SMT Packages
  • Small form factor
  • Low lead inductance
  • Low Thermal Impedance
Benefits
  • Improves System Efficiency with lower switching and conduction losses
  • Enables high switching frequency operation
  • Improves System Level Power Density
  • Reduces System Size; Weight; and Cooling Requirements
  • Enables new hard switching topologies (Totem-Pole PFC)
Applications
  • Industrial Power Supplies
  • Server/Telecom
  • EV-Charging Systems
  • Energy Storage Systems (ESS)
  • Uninterruptible Power Supplies (UPS)
  • Battery Management Systems (BMS)

Documents, Tools & Support

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Application Notes
Application Notes
Application Notes
Application Notes
Application Notes
Test Report
Test Report
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Product Catalog
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Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Sales Terms
Technical SupportPower Applications Forum

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How to Simulate Silicon Carbide Power Module Performance with LTSpice

Learn how to install and begin using Wolfspeed’s newest LTSpice models for our silicon carbide power modules.
Continue Reading  Technical Articles

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