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60 kW Interleaved Boost Converter

Product Shot of Wolfspeed's Reference Design of a 60 kW Interleaved Boost Converter
CRD-60DD12N
This reference design demonstrates the application of Wolfspeed’s C3M™ Silicon Carbide MOSFETs in a 4-phase interleaved boost converter. This topology is ideal for high efficiency solar power generation systems to boost the output voltage of the solar panel to a consistent DC bus voltage, which can be fed into a grid-tied inverter. The design uses parallel Silicon Carbide MOSFETs and parallel Silicon Carbide Schottky diodes to achieve a high-power density using discrete devices. The TO-247-4 package with a Kelvin source pin enables high frequency switching with reduced losses compared to 3-lead devices.
Specifications
  • Input Voltage: 470-800V DC​
  • Output Voltage: 850V DC​
  • Power Max: 60 kW​
  • Switching Frequency: 78kHz​
  • Peak Efficiency: 99.5%​
  • Power Density: 127W/in3
Applications
  • Solar boost converter​
What's Included
  • Complete design files including schematic, PCB layout and BOM​

Documents, Tools, & Support

Block diagram for CRD-60DD12N
Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
E4D20120D

1200 V Discrete Silicon Carbide Schottky Diodes

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Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
E4D20120D

1200 V Discrete Silicon Carbide Schottky Diodes

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Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
E4D20120D

1200 V Discrete Silicon Carbide Schottky Diodes

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Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
E4D20120D

1200 V Discrete Silicon Carbide Schottky Diodes

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Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
C4D10120D

Silicon Carbide 1200 V Schottky Diode

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Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
C4D10120D

Silicon Carbide 1200 V Schottky Diode

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Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
C4D10120D

Silicon Carbide 1200 V Schottky Diode

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Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
C4D10120D

Silicon Carbide 1200 V Schottky Diode

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Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
E3M0075120K

E-Series Automotive-Qualified Silicon Carbide MOSFETs

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Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
E3M0075120K

E-Series Automotive-Qualified Silicon Carbide MOSFETs

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Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
E3M0075120K

E-Series Automotive-Qualified Silicon Carbide MOSFETs

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Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
E3M0075120K

E-Series Automotive-Qualified Silicon Carbide MOSFETs

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Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0075120

Silicon Carbide Power 1200 V MOSFET

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Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0075120

Silicon Carbide Power 1200 V MOSFET

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Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0075120

Silicon Carbide Power 1200 V MOSFET

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Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
C3M0075120

Silicon Carbide Power 1200 V MOSFET

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Design Resources

Analyzing Transient Behavior Using a Double Pulse Test Simulation in LTspice

See how Wolfspeed LTspice models can make designing with silicon carbide in power electronics systems more efficient, cost-effective, and accurate. Get started optimizing your system design, without the need for physical samples or test kits.
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